XPS characterization of xα-Fe2O3–(1−x)ZrO2 for oxygen gas sensing application

Successful demonstration of Fe-doped ZnO nanowires using a facile vapour phase transport synthesis method for high-performance oxygen gas sensing application.

Download Full-text

Refractive Index Modification During Deposition of Silicon Oxynitride Films Prepared by Reactive Laser Ablation

MRS Proceedings ◽

10.1557/proc-526-97 ◽

1998 ◽

Vol 526 ◽

Author(s):

R. Machorro ◽

G. Soto ◽

E. C. Samano ◽

L. Cota-Araiza

Keyword(s):

Refractive Index ◽

Laser Ablation ◽

Optical Filters ◽

Optical Characterization ◽

Silicon Oxynitride ◽

Xps Characterization ◽

High Oxidation ◽

Oxygen Gas

AbstractInhomogeneous low-k thin films of SiOxNy have been deposited by laser ablation of a Si3N4 sintered target in presence of oxygen gas. The high oxidation rate of silicon nitride has been used to control the stoichiometry of the films by modifying the oxygen partial pressure. The refractive index of the deposited material was able to be tailored at any value between 1.47 (SiO2) to 2.03 (Si3N4) by this approach. In situ optical characterization of the growing films was possible using kinetic and spectro ellipsometry. The refractive index was determined by applying the Effective Medium Approximation (EMA) and considering a mixture of SiO2, Si3N4, and voids. The volumetric composition obtained by ellipsometry was compared to the results determined by AES and XPS characterization. The purpose of this application is to show that reactive PLD can be used to produce high quality optical filters.

Download Full-text

Preparation and Characterization of SnO2 Thin Film Gas Sensor for NOx Gas for Environmental Monitoring

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.124-126.223 ◽

2007 ◽

Vol 124-126 ◽

pp. 223-226 ◽

Cited By ~ 1

Author(s):

Md. Mosharaf Hossain Bhuiyan ◽

Tsuyoshi Ueda ◽

Tomoaki Ikegami

Keyword(s):

Thin Film ◽

Thin Films ◽

Gas Sensing ◽

Sno2 Thin Film ◽

Interdigitated Electrodes ◽

Undoped Sno2 ◽

Gas Sensing Properties ◽

Sno2 Thin Films ◽

Oxygen Gas

SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed excimer laser deposition (PLD). Palladium doped SnO2 thin film was also prepared by the PLD method combined with the DC sputtering process. The substrate temperature and the oxygen gas pressure were changed from 300 to 500°C and from 100 to 300 mTorr, respectively during deposition. The morphology and structural properties of the prepared thin films have been studied by AFM and XRD. The gas sensing properties of the SnO2 sensor to NO gas was evaluated by measuring electrical resistance between interdigitated electrodes. The highest sensitivity of the undoped SnO2 and Pd doped sensor was found to be around 9.5 and 42, respectively.

Download Full-text