The influence of heavily doped buried layer implants on electrostatic discharge (ESD), latchup, and a silicon germanium heterojunction bipolar transistor in a BiCMOS SiGe technology
2002 ◽
Vol 56
(3)
◽
pp. 341-362
◽
1999 ◽
Vol 46
(6)
◽
pp. 1207-1211
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