Absence of ground state PLE peak in crescent-shaped AlGaAs/GaAs quantum wire superlattices

1998 ◽  
Vol 51 (1-3) ◽  
pp. 233-237 ◽  
Author(s):  
Xue-Lun Wang ◽  
Mutsuo Ogura ◽  
Hirofumi Matsuhata
Keyword(s):  
1997 ◽  
Vol 55 (11) ◽  
pp. 6697-6700 ◽  
Author(s):  
N. Mutluay ◽  
B. Tanatar

2000 ◽  
Vol 77 (19) ◽  
pp. 2967-2969 ◽  
Author(s):  
Chris Percival ◽  
J. Woodhead ◽  
P. A. Houston ◽  
A. G. Cullis ◽  
G. Hill ◽  
...  

2000 ◽  
Vol 6 (3) ◽  
pp. 511-521 ◽  
Author(s):  
T.G. Kim ◽  
X.-L. Wang ◽  
Y. Suzuki ◽  
K. Komori ◽  
M. Ogura
Keyword(s):  

2020 ◽  
Vol 12 (4) ◽  
pp. 473-483
Author(s):  
R. Kumar ◽  
S. N. Singh

Electronic states of a single electron in doubly eccentric cylindrical quantum wire are theoretically investigated in this paper. The motion of electron in quantum wire is free along axial direction in a cylindrical quantum wire and restricted in annular regions by three different parallel finite cylindrical barriers as soft wall confinement. The effective mass Schrödinger equation with effective mass boundary conditions is used to find energy eigenvalues and   corresponding wavefunctions. Addition theorem for cylindrical Bessel functions is used to shift the origin for applying boundary conditions at different circular boundaries. Fourier expansion is applied after addition theorem to get wavefunctions in analytical form. A determinant equation is obtained as a result of applications of effective mass boundary conditions which roots gives energy of various electronic states. The lowest root gives ground state energy. The variation in ground state energy with eccentricity is obtained numerically and presented graphically. Electronic states in massive wall confinement and hard wall confinement is further obtained as limiting behavior of the states obtained in soft wall confinement. The knowledge of electronic states in such cylindrical hetrostructures semiconductor material can lead to improve the efficiency of many quantum devices.


2021 ◽  
Author(s):  
Devi Puttar ◽  
Vishal Verma ◽  
Vinayak Garg ◽  
R. K. Moudgil

2015 ◽  
Vol 29 (10) ◽  
pp. 1550039
Author(s):  
X. Q. Wang

The ground state energy E0, first excited state energy E1, excitation energy ΔE and oscillating period t of the polaron are calculated by using the linear combination operator and the unitary transformation methods. The variation of the above quantities with the temperature T and the potential well width L, we found that E0, E1 and ΔE all increase with increasing T and decrease with increasing L, but t changes with T and L in the opposite.


1999 ◽  
Vol 11 (24) ◽  
pp. 4665-4674 ◽  
Author(s):  
R K Moudgil ◽  
K Tankeshwar ◽  
K N Pathak
Keyword(s):  

Author(s):  
Ben O. Spurlock ◽  
Milton J. Cormier

The phenomenon of bioluminescence has fascinated layman and scientist alike for many centuries. During the eighteenth and nineteenth centuries a number of observations were reported on the physiology of bioluminescence in Renilla, the common sea pansy. More recently biochemists have directed their attention to the molecular basis of luminosity in this colonial form. These studies have centered primarily on defining the chemical basis for bioluminescence and its control. It is now established that bioluminescence in Renilla arises due to the luciferase-catalyzed oxidation of luciferin. This results in the creation of a product (oxyluciferin) in an electronic excited state. The transition of oxyluciferin from its excited state to the ground state leads to light emission.


Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.


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