Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers

1999 ◽  
Vol 59 (1-3) ◽  
pp. 47-51 ◽  
Author(s):  
V Kirchner ◽  
R Ebel ◽  
H Heinke ◽  
S Einfeldt ◽  
D Hommel ◽  
...  
2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2265-2269 ◽  
Author(s):  
Byoung-Rho Shim ◽  
Hideyuki Okita ◽  
Kulandaivel Jeganathan ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  

2016 ◽  
Vol 30 (20) ◽  
pp. 1650269 ◽  
Author(s):  
Thi Giang Le ◽  
Minh Tuan Dau

High-resolution transmission electron microscopy (HR-TEM) has been used to investigate the structural properties of GeMn/Ge nanocolumns multilayer samples grown on Ge(001) substrates by means of molecular beam epitaxy (MBE) system. Four bilayers with the spacer thickness in the range between 6 nm and 15 nm and 10 periods of bilayers of Ge[Formula: see text]Mn[Formula: see text]/Ge nanocolumn are presented. A simplified 2D model based on the theory of elastic constant interactions has been used to provide reasonable explanations to the vertical self-organization of GeMn nanocolumns in multilayers.


2006 ◽  
Vol 3 (4) ◽  
pp. 776-779 ◽  
Author(s):  
Kunio Ichino ◽  
Yasuharu Morimoto ◽  
Hiroshi Kobayashi

2009 ◽  
Vol 106 (11) ◽  
pp. 113533 ◽  
Author(s):  
M. A. Moram ◽  
Y. Zhang ◽  
T. B. Joyce ◽  
D. Holec ◽  
P. R. Chalker ◽  
...  

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