Ductile behaviour in single-point diamond-turning of single-crystal silicon

2002 ◽  
Vol 127 (2) ◽  
pp. 187-190 ◽  
Author(s):  
C.L Chao ◽  
K.J Ma ◽  
D.S Liu ◽  
C.Y Bai ◽  
T.L Shy
Keyword(s):  
Single Crystal ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
Crystal Silicon

Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study

2011 ◽  
Vol 496 ◽  
pp. 150-155 ◽  
Author(s):  
Saurav Goel ◽  
Xi Chun Luo ◽  
R.L. Reuben ◽  
Waleed Bin Rashid ◽  
Ji Ning Sun
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Molecular Dynamic ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
Machining Process ◽  
Crystal Silicon ◽  
Molecular Dynamic Simulation Study ◽  
Machining Properties

Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

Ductile Regime Nanomachining of Single-Crystal Silicon Carbide

2004 ◽  
Vol 127 (3) ◽  
pp. 522-532 ◽  
Author(s):  
John Patten ◽  
Wei Gao ◽  
Kudo Yasuto
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
Single Crystal ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
High Pressure Phase ◽  
Ductile Material ◽  
Crystal Silicon ◽  
Pressure Phase

We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and silicon nitride. It is believed that the ductility of SiC during machining is due to the formation of a high-pressure phase at the cutting edge, which encompasses the chip formation zone and its associated material volume. This high-pressure phase transformation mechanism is similar to that found with other semiconductors and ceramics, leading to a plastic response rather than brittle fracture at small size scales.

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