scholarly journals Fabrication of Large-Diameter Single-Crystal Silicon Aspheric Lens by Straight-Line Enveloping Diamond-Turning Method.

2002 ◽  
Vol 68 (4) ◽  
pp. 561-565 ◽  
Author(s):  
Jiwang YAN ◽  
Katsuo SYOJI ◽  
Tsunemoto KURIYAGAWA
Keyword(s):  
Single Crystal ◽  
Large Diameter ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
Crystal Silicon ◽  
Aspheric Lens ◽  
Straight Line

Simulation Study of Cutting Forces, Stresses and Temperature during Nanometric Cutting of Single Crystal Silicon

2011 ◽  
Vol 496 ◽  
pp. 223-228 ◽  
Author(s):  
Saurav Goel ◽  
Xi Chun Luo ◽  
R.L. Reuben ◽  
Waleed Bin Rashid ◽  
Ji Ning Sun
Keyword(s):  
Single Crystal ◽  
Cutting Forces ◽  
Diamond Tool ◽  
Single Crystal Silicon ◽  
Potential Energy Function ◽  
Diamond Turning ◽  
Limiting Factor ◽  
Crystal Silicon ◽  
Realistic Potential ◽  
Ductile Regime Machining

Wear of diamond tool has always been a limiting factor in ductile regime machining of large size silicon components. In order to understand the tool wear phenomena, it is non-trivial to know the process outputs especially cutting forces, stresses and temperature during nanometric turning. In this paper, a realistic potential energy function has been deployed through molecular dynamic (MD) simulation, to simulate the process outputs of single diamond turning operation against single crystal silicon. The simulation result suggests that wear mechanism of diamond tool is fundamentally governed by these process parameters and thus critical.

Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study

2011 ◽  
Vol 496 ◽  
pp. 150-155 ◽  
Author(s):  
Saurav Goel ◽  
Xi Chun Luo ◽  
R.L. Reuben ◽  
Waleed Bin Rashid ◽  
Ji Ning Sun
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Molecular Dynamic ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
Machining Process ◽  
Crystal Silicon ◽  
Molecular Dynamic Simulation Study ◽  
Machining Properties

Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

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