Influence of the initial layers on the optical and electrical properties of ITO films

Indium tin oxide (ITO) is a widely used material for transparent conductive oxide (TCO) films due to its good optical and electrical properties. Improving the optoelectronic properties of ITO films with reduced thickness is crucial and quite challenging. ITO-based multilayer films with an aluminium–silver (Al–Ag) interlayer (ITO/Al–Ag/ITO) and a pure ITO layer (as reference) were prepared by RF and DC sputtering. The microstructural, optical and electrical properties of the ITO/Al–Ag/ITO (IAAI) films were investigated before and after annealing at 400 °C. X-ray diffraction measurements show that the insertion of the Al–Ag intermediate bilayer led to the crystallization of an Ag interlayer even at the as-deposited stage. Peaks attributed to ITO(222), Ag(111) and Al(200) were observed after annealing, indicating an enhancement in crystallinity of the multilayer films. The annealed IAAI film exhibited a remarkable improvement in optical transmittance (86.1%) with a very low sheet resistance of 2.93 Ω/sq. The carrier concentration increased more than twice when the Al–Ag layer was inserted between the ITO layers. The figure of merit of the IAAI multilayer contact has been found to be high at 76.4 × 10−3 Ω−1 compared to a pure ITO contact (69.4 × 10−3 Ω−1). These highly conductive and transparent ITO films with Al–Ag interlayer can be a promising contact for low-resistance optoelectronics devices.

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Effect of sputtering parameters on optical and electrical properties of ITO films on PET substrates

Applied Surface Science ◽

10.1016/j.apsusc.2013.08.024 ◽

2013 ◽

Vol 285 ◽

pp. 157-166 ◽

Cited By ~ 25

Author(s):

Kun-San Tseng ◽

Yu-Lung Lo

Keyword(s):

Electrical Properties ◽

Optical And Electrical Properties ◽

Ito Films

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Effect of Emitting Current Ion Source on Structural, Optical and Electrical Properties of Nanostructured ITO Thin Films by Ion-Beam Assisted Evaporation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.979.263 ◽

2014 ◽

Vol 979 ◽

pp. 263-266 ◽

Cited By ~ 2

Author(s):

Bhumin Yosvichit ◽

Mati Horprathum ◽

Pitak Eiamchai ◽

Viyapol Patthanasetakul ◽

Benjarong Samransuksamer ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Carrier Concentration ◽

Indium Tin Oxide ◽

Ion Beam ◽

Ion Source ◽

Optical And Electrical Properties ◽

Substrate Heating ◽

Ito Thin Films ◽

Ito Films

Transparent conductive oxides (TCOs) with indium tin oxide (ITO) thin films were deposited without substrate heating and post-deposition anneal using ion-beam assisted evaporation technique on glass and silicon substrates. The oxygen ion with emitting current produced using End-Hall ion source for bombardment of growing surface to improve ITO films structure. In this study, we investigate the effect of an ion flux to ITO films in terms of structural, optical and electrical properties. The emitting current can be varied from 0.5 to 2.0 A with the oxygen flow rate 7 sccm. The total film thickness and deposition rate are 200 nm and 0.2 nm/s, respectively. The structural properties of thin films were characterized by X-ray diffraction (XRD) to discover the preferred orientation with phase of crystalline and scanning electron microscopy (SEM) to examine the surface morphology in cross-section view. To determine the transmission spectra of the films, UV-visible spectrometer is introduced. Moreover, the films were also measured to investigate resistivity, carrier concentration, mobility and sheet resistance by Hall-effect measurements and four-point probe. It has been found that the ITO films with lowest electrical resistivity for the emitting current of 1 A about 5.57x10-4 Ω.cm and slightly increases with increase of the emitting current. The mobility and carrier concentration rapidly decreases with increase the emitting current from 1.0 A to 2.0 A.

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Influence of Annealing Atmosphere on the Characteristics of Sol-Gel Derived ITO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.684.279 ◽

2013 ◽

Vol 684 ◽

pp. 279-284 ◽

Cited By ~ 1

Author(s):

Yu Ming Peng ◽

Yan Kuin Su ◽

Ru Yuan Yang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Indium Tin Oxide ◽

Sol Gel ◽

Dip Coating ◽

Visible Range ◽

Annealing Atmosphere ◽

Optical And Electrical Properties ◽

Ito Thin Films ◽

Ito Films

In this paper, the Indium Tin Oxide (ITO) thin ﬁlms were prepared by a sol-gel dip coating method and then annealed at 600°C under different atmosphere (vacuum, N2 and 96.25%N2+3.75%H2). Their microstructure, optical and electrical properties were investigated and discussed. Suitable atmosphere can improve the crystalline of the ITO films, therefore the optical and electrical properties of the ITO films are improved. The uv-vis results showed the maximum of transmittance in the visible range (380-780 nm) of 85.6% and the lowest resistivity of 4.4×10-2 Ω-cm when the ITO films were annealed under 96.25% N2 with 3.75% H2 atmosphere.

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Effect of content silver and heat treatment temperature on morphological, optical, and electrical properties of ITO films by sol–gel technique

Journal of Nanoparticle Research ◽

10.1007/s11051-014-2582-0 ◽

2014 ◽

Vol 16 (9) ◽

Cited By ~ 1

Author(s):

Majid Mirzaee ◽

Abolghasem Dolati

Keyword(s):

Heat Treatment ◽

Electrical Properties ◽

Heat Treatment Temperature ◽

Sol Gel ◽

Treatment Temperature ◽

Optical And Electrical Properties ◽

Gel Technique ◽

Ito Films

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Application of Ethanolamine Method FOB the Preparation of Indium Oxide-Based Sols And Films

MRS Proceedings ◽

10.1557/proc-271-401 ◽

1992 ◽

Vol 271 ◽

Cited By ~ 21

Author(s):

Yasutaia Taiahashi ◽

Hideo Hayashi ◽

Yutaka Ohya

Keyword(s):

Electrical Properties ◽

Indium Oxide ◽

Dip Coating ◽

Optical And Electrical Properties ◽

Ito Film ◽

Ito Films

ABSTRACTIt is found that ethanolamine method, recently developed by us, is very useful to form stable, concentrated (0.4–0.5M) indium oxide-based sols from which very uniform, transparent In2O3 and ITO films are obtained by dip-coating. Indium isopropoxide and acetate can be used as the starting materials. The optical and electrical properties of these films were examined. A transparent ITO film with the highest conductivity (3030 S/cm, after annealing at 0.05 torr-600°C for 60 min) was obtained from the acetate at 600°C. The films from the alkoxide had lower conductivities probably due to the impurities included in the alkoxide.

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Effects of Organic Compounds on Microstructure, Optical, and Electrical Properties of ITO Thin Films Prepared by Dip-Coating Method

Advances in Materials Science and Engineering ◽

10.1155/2012/741561 ◽

2012 ◽

Vol 2012 ◽

pp. 1-7 ◽

Cited By ~ 1

Author(s):

Ru-Yuan Yang ◽

Cheng-Jye Chu ◽

Yu-Ming Peng ◽

Hui-Ju Chueng

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Organic Compounds ◽

Low Cost ◽

Sol Gel ◽

Dip Coating ◽

Visible Range ◽

Optical And Electrical Properties ◽

Ito Thin Films ◽

Ito Films

Tin-doped Indium oxide (ITO) thin films were prepared by sol-gel dip-coating technique using low-cost metal salts and organic solvents. The coated films were treated without annealing or annealed at 400°C and 600°C in 3% H2/97% N2mixtures atmosphere. Microstructure, optical, and electrical properties of the prepared ITO films were investigated in detail. The maximum transmittance in the visible range (380–780 nm) is 85.6%, and the best resistivity is5×10−2 Ω-cm when annealed at 600°C in 3% H2/97% N2mixtures atmosphere. It is found that the optical and electrical properties of the prepared ITO films are strongly related to the microstructure variation. The organic compounds could not be removed completely, and the prepared ITO thin films were not dense when the prepared ITO film was annealed at 600°C in 3% H2/97% N2mixtures atmosphere, causing the poor conductivity.

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