Effect of Emitting Current Ion Source on Structural, Optical and Electrical Properties of Nanostructured ITO Thin Films by Ion-Beam Assisted Evaporation

Transparent conductive oxides (TCOs) with indium tin oxide (ITO) thin films were deposited without substrate heating and post-deposition anneal using ion-beam assisted evaporation technique on glass and silicon substrates. The oxygen ion with emitting current produced using End-Hall ion source for bombardment of growing surface to improve ITO films structure. In this study, we investigate the effect of an ion flux to ITO films in terms of structural, optical and electrical properties. The emitting current can be varied from 0.5 to 2.0 A with the oxygen flow rate 7 sccm. The total film thickness and deposition rate are 200 nm and 0.2 nm/s, respectively. The structural properties of thin films were characterized by X-ray diffraction (XRD) to discover the preferred orientation with phase of crystalline and scanning electron microscopy (SEM) to examine the surface morphology in cross-section view. To determine the transmission spectra of the films, UV-visible spectrometer is introduced. Moreover, the films were also measured to investigate resistivity, carrier concentration, mobility and sheet resistance by Hall-effect measurements and four-point probe. It has been found that the ITO films with lowest electrical resistivity for the emitting current of 1 A about 5.57x10-4 Ω.cm and slightly increases with increase of the emitting current. The mobility and carrier concentration rapidly decreases with increase the emitting current from 1.0 A to 2.0 A.

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Influence of Annealing Atmosphere on the Characteristics of Sol-Gel Derived ITO Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.684.279 ◽

2013 ◽

Vol 684 ◽

pp. 279-284 ◽

Cited By ~ 1

Author(s):

Yu Ming Peng ◽

Yan Kuin Su ◽

Ru Yuan Yang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Indium Tin Oxide ◽

Sol Gel ◽

Dip Coating ◽

Visible Range ◽

Annealing Atmosphere ◽

Optical And Electrical Properties ◽

Ito Thin Films ◽

Ito Films

In this paper, the Indium Tin Oxide (ITO) thin ﬁlms were prepared by a sol-gel dip coating method and then annealed at 600°C under different atmosphere (vacuum, N2 and 96.25%N2+3.75%H2). Their microstructure, optical and electrical properties were investigated and discussed. Suitable atmosphere can improve the crystalline of the ITO films, therefore the optical and electrical properties of the ITO films are improved. The uv-vis results showed the maximum of transmittance in the visible range (380-780 nm) of 85.6% and the lowest resistivity of 4.4×10-2 Ω-cm when the ITO films were annealed under 96.25% N2 with 3.75% H2 atmosphere.

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Optical and Electrical Properties of Indium Tin Oxide (ITO) Thin Films Prepared by Thermal Evaporation Method on Polyethylene Terephthalate (PET) Substrate

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.545.393 ◽

2012 ◽

Vol 545 ◽

pp. 393-398 ◽

Cited By ~ 5

Author(s):

Mohammed Khalil Mohammed Ali ◽

K. Ibrahim ◽

M.Z. Pakhuruddin ◽

M.G. Faraj

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Optical Transmission ◽

Thermal Evaporation ◽

Optical And Electrical Properties ◽

Thermal Evaporation Method ◽

Ito Thin Films ◽

Ito Films

This work describe the optical and electrical properties of indium tin oxide (ITO) thin films prepared by thermal evaporation method on flexible plastic substrate (polyethylene terephthalate (PET)). The optical transmission and absorption of ITO films in the visible and UV rang have been studied. The resistivity, sheet resistant, carrier concentration and mobility have been evaluated by Hall Effect measurement. The surface morphology and roughness were investigated by atomic force microscopy (AFM). The results indicate that the optical transmission greater than 85% over the visible rang and it was found to be strongly dependent on the thickness of ITO films. The Resistivity and sheet resistant with low values (10-4Ω-cm, 9.22 Ω/ respectively) were obtained and ties values were increased with ITO thin films thickness increasing .AFM investigation showed that the roughness surface of (8 – 30) RMS have been obtained over different thickness of ITO films. The obtained results of the deposited films by this method were analyzed. Details of sample preparation, experimental methods and results are given and discussed.

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Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films

Optik ◽

10.1016/j.ijleo.2017.12.021 ◽

2018 ◽

Vol 156 ◽

pp. 728-737 ◽

Cited By ~ 3

Author(s):

Leandro Voisin ◽

Makoto Ohtsuka ◽

Svitlana Petrovska ◽

Ruslan Sergiienko ◽

Takashi Nakamura

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Optical And Electrical Properties ◽

Ito Thin Films

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Effects of Annealing Temperature of Indium Tin Oxide Thin Films Prepared onto Glass by Sol-Gel Spin Coating Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.343-344.116 ◽

2011 ◽

Vol 343-344 ◽

pp. 116-123

Author(s):

Yu Ming Peng ◽

Yan Kuin Su ◽

Cheng Jye Chu ◽

Ru Yuan Yang ◽

Ruei Ming Huang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Spin Coating ◽

Annealing Temperature ◽

Sol Gel ◽

Optical And Electrical Properties ◽

Coating Method ◽

Ito Thin Films

In this paper, the indium tin oxide (ITO) thin ﬁlms were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.

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Optical and Electrical Properties of Transparent Conductive ITO Thin Films under Proton Radiation with 100 keV

Materials Science Forum ◽

10.4028/www.scientific.net/msf.475-479.3697 ◽

2005 ◽

Vol 475-479 ◽

pp. 3697-3700

Author(s):

Q. Wei ◽

S.Y. He ◽

J.C. Liu ◽

D.Z. Yang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Sheet Resistance ◽

Indium Tin Oxide ◽

Quartz Substrate ◽

Sol Gel ◽

Radiation Environment ◽

Optical And Electrical Properties ◽

Proton Radiation ◽

Ito Thin Films

Under the simulation environment for the vacuum and heat sink in space, the changes in optical and electrical properties of transparent conductive indium tin oxide (ITO) thin films induced by radiation of protons with 100 keV were studied. The ITO thin films were deposited on JGS1 quartz substrate by a sol-gel method. The sheet resistance and transmittance spectra of the ITO thin films were measured using the four-point probe method and a spectrophotometer, respectively. The surface morphology was analyzed by AFM. The experimental results showed that the electrical and optical performances of the ITO thin films were closely related to the irradiation fluence. When the fluence exceeded a given value 2×1016 cm-2, the sheet resistance increased obviously and the optical transmittance decreased. The AFM analysis indicated that the grain size of the ITO thin films diminished. The studies about the radiation effect on ITO thin films will help to predict performance evolution of the second surface mirrors on satellites under space radiation environment.

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Effects of Organic Compounds on Microstructure, Optical, and Electrical Properties of ITO Thin Films Prepared by Dip-Coating Method

Advances in Materials Science and Engineering ◽

10.1155/2012/741561 ◽

2012 ◽

Vol 2012 ◽

pp. 1-7 ◽

Cited By ~ 1

Author(s):

Ru-Yuan Yang ◽

Cheng-Jye Chu ◽

Yu-Ming Peng ◽

Hui-Ju Chueng

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Organic Compounds ◽

Low Cost ◽

Sol Gel ◽

Dip Coating ◽

Visible Range ◽

Optical And Electrical Properties ◽

Ito Thin Films ◽

Ito Films

Tin-doped Indium oxide (ITO) thin films were prepared by sol-gel dip-coating technique using low-cost metal salts and organic solvents. The coated films were treated without annealing or annealed at 400°C and 600°C in 3% H2/97% N2mixtures atmosphere. Microstructure, optical, and electrical properties of the prepared ITO films were investigated in detail. The maximum transmittance in the visible range (380–780 nm) is 85.6%, and the best resistivity is5×10−2 Ω-cm when annealed at 600°C in 3% H2/97% N2mixtures atmosphere. It is found that the optical and electrical properties of the prepared ITO films are strongly related to the microstructure variation. The organic compounds could not be removed completely, and the prepared ITO thin films were not dense when the prepared ITO film was annealed at 600°C in 3% H2/97% N2mixtures atmosphere, causing the poor conductivity.

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Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

International Journal of Photoenergy ◽

10.1155/2015/483147 ◽

2015 ◽

Vol 2015 ◽

pp. 1-8 ◽

Cited By ~ 4

Author(s):

Chuan Lung Chuang ◽

Ming Wei Chang ◽

Nien Po Chen ◽

Chung Chiang Pan ◽

Chung Ping Liu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Solar Cells ◽

Indium Tin Oxide ◽

Copper Indium Gallium Diselenide ◽

Glass Substrates ◽

Ito Film ◽

Ito Thin Films ◽

Cigs Solar Cells ◽

Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

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