Microcrystalline silicon films and tandem solar cells prepared by triode PECVD

1997 ◽  
Vol 49 (1-4) ◽  
pp. 171-177 ◽  
Author(s):  
Xianbo Liao ◽  
Shuran Sheng ◽  
Feng Yun ◽  
Zhixun Ma ◽  
Guanglin Kong ◽  
...  
2002 ◽  
Vol 41 (Part 1, No. 11A) ◽  
pp. 6417-6420 ◽  
Author(s):  
Ying Zhao ◽  
Shinsuke Miyajima ◽  
Yoshinori Ide ◽  
Akira Yamada ◽  
Makoto Konagai

2006 ◽  
Vol 20 (03) ◽  
pp. 303-314 ◽  
Author(s):  
QING-SONG LEI ◽  
ZHI-MENG WU ◽  
JIAN-PING XI ◽  
XIN-HUA GENG ◽  
YING ZHAO ◽  
...  

We have examined the deposition of highly conductive boron-doped microcrystalline silicon (μc- Si:H ) films for application in solar cells. Depositions were conducted in a very high frequency plasma enhanced chemical vapor deposition (VHF PECVD) chamber. In the deposition processes, various substrate temperatures (TS) were applied. Highly conductive p-type microcrystalline silicon films were obtained at substrate temperature lower than 210°C. The factors that affect the conductivity of the films were investigated. Results suggest that the dark conductivity, which was determined by the Hall mobility and carrier concentration, is influenced by the structure. The properties of the films are strongly dependent on the substrate temperature. With TS increasing, the dark conductivity (σd) increases initially; reach the maximum values at certain TS and then decrease. Also, we applied the boron-doped μc- Si:H as p-layers to the solar cells. An efficiency of about 8.5% for a solar cell with μc- Si:H p-layer was obtained.


2002 ◽  
Vol 74 (1-4) ◽  
pp. 457-467 ◽  
Author(s):  
J Meier ◽  
S Dubail ◽  
S Golay ◽  
U Kroll ◽  
S Faÿ ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Chiung-Nan Li ◽  
Hsuan-Yin Fang ◽  
Yu-Hung Chen ◽  
Chun-Ming Yeh ◽  
Chian-Fu Huang ◽  
...  

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