A temperature-dependent pre-exponential factor in Efros–Shklovskii variable range hopping conduction in p-type CuInTe2

2003 ◽  
Vol 18 (1-3) ◽  
pp. 292-293 ◽  
Author(s):  
C. Quiroga ◽  
R. Oentrich ◽  
I. Bonalde ◽  
E. Medina D. ◽  
S.M. Wasim ◽  
...  
Keyword(s):  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Exponential Factor ◽  
Variable Range ◽  
P Type ◽  
Variable Range Hopping Conduction

Efros-Shklovskii type variable range hopping conduction and magnetoresistance in p-type CuGa 3 Te 5

2017 ◽  
Vol 107 ◽  
pp. 285-292 ◽  
Author(s):  
S.M. Wasim ◽  
L. Essaleh ◽  
G. Marín ◽  
C. Rincón ◽  
S. Amhil ◽  
...  
Keyword(s):  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Type Variable ◽  
P Type ◽  
Variable Range Hopping Conduction

Mott type variable range hopping conduction and magnetoresistance in p-type CuIn3Te5 semiconductor compound

2017 ◽  
Vol 122 (1) ◽  
pp. 015702 ◽  
Author(s):  
L. Essaleh ◽  
S. M. Wasim ◽  
G. Marín ◽  
C. Rincón ◽  
S. Amhil ◽  
...  
Keyword(s):  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Semiconductor Compound ◽  
Type Variable ◽  
P Type ◽  
Variable Range Hopping Conduction

Variable Range Hopping Conduction in p-Type CuInTe2

2000 ◽  
Vol 219 (2) ◽  
pp. 351-356 ◽  
Author(s):  
M. Iqbal ◽  
J. Galibert ◽  
S.M. Wasim ◽  
E. Hernandez ◽  
P. Bocaranda ◽  
...  
Keyword(s):  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Variable Range ◽  
P Type ◽  
Variable Range Hopping Conduction

1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

2015 ◽  
Vol 1770 ◽  
pp. 25-30 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C.L. Littler
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Noise Component ◽  
Variable Range ◽  
Noise Measurements ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

scholarly journals Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers

2019 ◽  
Vol 58 (9) ◽  
pp. 098004 ◽  
Author(s):  
Hideharu Matsuura ◽  
Akinobu Takeshita ◽  
Tatsuya Imamura ◽  
Kota Takano ◽  
Kazuya Okuda ◽  
...  
Keyword(s):  
Conduction Mechanism ◽  
Hopping Conduction ◽  
Variable Range Hopping ◽  
Al Doping ◽  
Variable Range ◽  
Variable Range Hopping Conduction
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