scholarly journals Electron acceleration by a localized electric field

1986 ◽  
Vol 4 (3-4) ◽  
pp. 439-452 ◽  
Author(s):  
D. Galmiche ◽  
J. P. Nicolle ◽  
D. Pesme
Keyword(s):  
Particle Acceleration ◽  
Electric Field ◽  
Plasma Wave ◽  
Electron Acceleration ◽  
Landau Damping ◽  
One Dimensional ◽  
Convective Regime ◽  
Electric Structure ◽  
Electron Distributions

The acceleration of test electrons by a resonant, one—dimensional electric structure is studied in the convective regime with the Zakharov equations. Depending on the nonlinearity level the particle acceleration is due to diffusion or trapping by the plasma wave. Electron distributions are obtained and compared with 1-D particle code results. Influence of Landau damping formulation is discussed.

Numerische Integration der nichtlinearen Vlasov-Gleichung

1961 ◽  
Vol 16 (12) ◽  
pp. 1320-1328 ◽  
Author(s):  
G. Knorr
Keyword(s):  
Electric Field ◽  
Electric Energy ◽  
Landau Damping ◽  
Collision Term ◽  
Dimensional Electron ◽  
Initial Value ◽  
Linear Solution ◽  
One Dimensional ◽  
Trapped Particles ◽  
Linear Effect

The VLASOV equation, i. e. the BOLTZMANN equation without collision term, was numerically integrated as an initial value problem together with the second MAXWELL equation for a one-dimensional electron plasma with smeared-out ion background. The initial values were taken as a MAXWELLian distribution in velocity space and a cosine distribution in position, resulting in a sinusform for the electric field.The LANDAU damping of the total energy of the electric field turned out to be valid for times larger than those given by a formal estimation of the validity of the linear solution. For still later times, the decay rate of the electric energy is less than that given by LANDAU damping.The period of validity of LANDAU damping was computed by estimating the influence of the trapped particles. As a non-linear effect the first harmonic of the electric field builds up within this period. The growth of the first harmonic is faster for larger wave numbers k.

scholarly journals Landau damping in one dimensional periodic inhomogeneous collisionless plasmas

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025229
Author(s):  
Sanjeev Kumar Pandey ◽  
Rajaraman Ganesh
Keyword(s):  
Landau Damping ◽  
One Dimensional ◽  
Collisionless Plasmas

Effect of the electric field on the agyrotropic electron distributions

2021 ◽  
Author(s):  
C. ‐H. Gao ◽  
B. ‐B. Tang ◽  
W. Y. Li ◽  
C. Wang ◽  
Yu. V. Khotyaintsev ◽  
...  
Keyword(s):  
Electric Field ◽  
Electron Distributions

PIEZOELECTRIC MATERIAL AND ONE-DIMENSIONAL PHONONIC CRYSTAL

2019 ◽  
Vol 26 (02) ◽  
pp. 1850144 ◽  
Author(s):  
ARAFA H. ALY ◽  
AHMED NAGATY ◽  
Z. KHALIFA
Keyword(s):  
Electric Field ◽  
Piezoelectric Material ◽  
Material Properties ◽  
Phononic Crystal ◽  
Defect Layer ◽  
Phononic Crystals ◽  
Localized Modes ◽  
One Dimensional ◽  
Energy Applications ◽  
Relative Change

We have theoretically obtained the transmittance properties of one-dimensional phononic crystals incorporating a piezoelectric material as a defect layer. We have used the transfer matrix method in our analysis with/without defect materials. By increasing the thickness of the defect layer, we obtained a sharp peak created within the bandgap, that indicates to the significance of defect layer thickness on the band structure. The localized modes and a particular intensity estimated within the bandgap depend on the piezoelectric material properties. By applying different quantities of an external electric field, the position of the peak shifts to different frequencies. The electric field induces a relative change in the piezoelectric thickness. Our structure may be very useful in some applications such as sensors, acoustic switches, and energy applications.

BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 173-176 ◽  
Author(s):  
BARBAROS ASLAN ◽  
LESTER F. EASTMAN ◽  
WILLIAM J. SCHAFF ◽  
XIAODONG CHEN ◽  
MICHAEL G. SPENCER ◽  
...  
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Electron Acceleration ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Experimental Development ◽  
Ballistic Electron

We present the experimental development and characterization of GaN ballistic diodes for THz operation. Fabricated devices have been described and gathered experimental data is discussed. The major problem addressed is the domination of the parasitic resistances which significantly reduce the accelerating electric field across the ballistic region (intrinsic layer).

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