The weakened Weibel instability of collimated fast electron beam in nanotube array

AbstractThe Weibel instability of the collimated MeV fast electron beams in a nanotube array target is researched in this work. It is found that the filamentation of the fast electrons is significantly suppressed. When fast electrons propagate the nanotube array, a strong magnetic field is created near the surface of tubes to obstruct the transverse movement of the fast electrons and bend them into the inner vacuum spaces between the successive tubes. In consequence, the positive feedback loop between the magnetic field perturbation and the electrons density perturbation is broken and the Weibel instability is thus weakened. Furthermore, the calculated results by a hybrid particle-in-cell code have also proven this weakening effect on the Weibel instability. Because of the high-energy density delivered by the MeV electrons, these results indicate some significant applications in the high-energy physics, such as radiography, fast-electron beam focusing, and perhaps fast ignition.

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Investigation of plasma parameters created by a fast electron beam in a magnetic field

Vacuum ◽

10.1016/0042-207x(71)90093-5 ◽

1971 ◽

Vol 21 (8) ◽

pp. 355

Keyword(s):

Magnetic Field ◽

Electron Beam ◽

Fast Electron ◽

Plasma Parameters ◽

Fast Electron Beam

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Fast electron transport dynamics and energy deposition in magnetized, imploded cylindrical plasma

Philosophical Transactions of The Royal Society A Mathematical Physical and Engineering Sciences ◽

10.1098/rsta.2020.0052 ◽

2020 ◽

Vol 379 (2189) ◽

pp. 20200052 ◽

Cited By ~ 1

Author(s):

D. Kawahito ◽

M. Bailly-Grandvaux ◽

M. Dozières ◽

C. McGuffey ◽

P. Forestier-Colleoni ◽

...

Keyword(s):

Magnetic Field ◽

Inertial Confinement Fusion ◽

Energy Deposition ◽

High Gain ◽

High Energy ◽

High Energy Density ◽

Intense Laser ◽

Fast Electrons ◽

Maximum Compression ◽

Cylindrical Plasma

Inertial confinement fusion approaches involve the creation of high-energy-density states through compression. High gain scenarios may be enabled by the beneficial heating from fast electrons produced with an intense laser and by energy containment with a high-strength magnetic field. Here, we report experimental measurements from a configuration integrating a magnetized, imploded cylindrical plasma and intense laser-driven electrons as well as multi-stage simulations that show fast electrons transport pathways at different times during the implosion and quantify their energy deposition contribution. The experiment consisted of a CH foam cylinder, inside an external coaxial magnetic field of 5 T, that was imploded using 36 OMEGA laser beams. Two-dimensional (2D) hydrodynamic modelling predicts the CH density reaches 9.0 g cm − 3 , the temperature reaches 920 eV and the external B-field is amplified at maximum compression to 580 T. At pre-determined times during the compression, the intense OMEGA EP laser irradiated one end of the cylinder to accelerate relativistic electrons into the dense imploded plasma providing additional heating. The relativistic electron beam generation was simulated using a 2D particle-in-cell (PIC) code. Finally, three-dimensional hybrid-PIC simulations calculated the electron propagation and energy deposition inside the target and revealed the roles the compressed and self-generated B-fields play in transport. During a time window before the maximum compression time, the self-generated B-field on the compression front confines the injected electrons inside the target, increasing the temperature through Joule heating. For a stronger B-field seed of 20 T, the electrons are predicted to be guided into the compressed target and provide additional collisional heating. This article is part of a discussion meeting issue ‘Prospects for high gain inertial fusion energy (part 2)’.

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Approach to the study of fast electron transport in cylindrically imploded targets

Laser and Particle Beams ◽

10.1017/s0263034615000592 ◽

2015 ◽

Vol 33 (3) ◽

pp. 525-534 ◽

Cited By ~ 3

Author(s):

D. Del Sorbo ◽

Y. Arikawa ◽

D. Batani ◽

F. Beg ◽

J. Breil ◽

...

Keyword(s):

Electron Beam ◽

Fast Electron ◽

Relativistic Electron Beam ◽

Point Of View ◽

Experimental Point ◽

Fast Electrons ◽

Laser Facility ◽

Fast Electron Beam ◽

Laser Engineering ◽

Fast Electron Transport

AbstractThe transport of relativistic electron beam in compressed cylindrical targets was studied from a numerical and experimental point of view. In the experiment, cylindrical targets were imploded using the Gekko XII laser facility of the Institute of Laser Engineering. Then the fast electron beam was created by shooting the LFEX laser beam. The penetration of fast electrons was studied by observing Kα emission from tracer layers in the target.

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LITHOS: A fast electron beam lithography simulator

Microelectronic Engineering ◽

10.1016/0167-9317(94)00165-0 ◽

1995 ◽

Vol 26 (3-4) ◽

pp. 131-140 ◽

Cited By ~ 4

Author(s):

N. Glezos ◽

I. Raptis ◽

M. Hatzakis

Keyword(s):

Electron Beam ◽

Fast Electron ◽

Electron Beam Lithography ◽

Fast Electron Beam

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Line-Shaped Electron Beam System and Soi Films Prepared by The System

MRS Proceedings ◽

10.1557/proc-45-311 ◽

1985 ◽

Vol 45 ◽

Author(s):

Y. Hayafuji ◽

A. Shibata ◽

T. Yanada ◽

A. Sawada ◽

S. Usui ◽

...

Keyword(s):

Electron Beam ◽

Crystalline Silicon ◽

Semiconductor Industry ◽

High Energy ◽

Silicon Films ◽

High Energy Density ◽

Present System ◽

Single Crystalline ◽

Beam System ◽

Scanning Area

ABSTRACTThe line-shaped electron beam annealing system which generates an electron beam of a length of 4 cm and a width af less than 100 um with a high energy density exceeding well over 100 kW/cm2 was developed for the first time with a purpose of SOI processing as its primary application. An pccelaration voltage of up to 20 kV can be used in this system. Seeded single crystalline islands with areas several mm long and 30 to 100 um in width were obtained by a single scan of the electron beam. The electron beam is generated in a pulsed way in the system due to the power restriction of the power supplies. An area of 4×5 cm2 was processed by a single scan of an electron beam at a sample speed of 530 cm/sec and a beam duration of 9.5 msec. The scanning area for one scan is determined by the beam length and the duration of the beam and sample speed.The present system could give single crystalline silicon films without any grain boundaries. The electron mobility of the electron beam recrystallized films, obtained from FETs made as a vehicle to test the electrical properties of the films, was comparable to that of the bulk silicon. A very rapid migration of silicon atoms in solid polycrystalline silicon films, which is controllable by process parameters, was also found with a migration speed of the order of 1 m/sec in a capped structure. The present electron beam system is useful in studying basic mechanisms of crystal growth in thin films. The system can have a very high throughput, a desirable feature in semiconductor industry. The present system can also be used to study the rapid thermal treatment of materials other than semiconductors including rapidly solidified materials.

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