HREM of epitaxially grown Fe/TiO2 and Cu/TiO2 interfaces

1993 ◽  
Vol 51 ◽  
pp. 834-835
Author(s):  
P. Lu ◽  
F. Cosandey
Keyword(s):  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Select Area Diffraction ◽  
Ion Milling ◽  
Cross Sectional ◽  
Oxide Interfaces ◽  
Atomic Structures ◽  
Resolution Electron ◽  
High Resolution Electron Microscope ◽  
Standard Techniques

High-resolution electron microscopy (HREM) has been used to provide information on atomic structures of metal/oxide interfaces, which are of both scientific and technological interest. In this report, we present results of a study on Fe/TiO2 and Cu/TiO2 interfaces by HREM. The Fe/TiO2 and Cu/TiO2 interfaces were formed by vapor deposition of Fe and Cu on TiO2 (110) surface, respectively, in a UHV chamber with a base pressure of ∽1x10−10 torr. Cross sectional HREM specimens were prepared using standard techniques involving mechanical polishing, dimpling and ion-milling. The samples were examined in an Topcon-002B high-resolution electron microscope. HREM simulations were performed using the EMS program.Figs, 1a and 1b show a HREM micrograph and a select area diffraction pattern of Fe/TiO2 interface, respectively, taken along the TiO2 [001] direction. From Fig.la and Fig.1b, the following orientation relationship is obtained: [001]Fe//[001]TiO2 and (100)Fe//(110)TiO2. With this orientation, there is about 12.6% lattice misfitt along the TiO2 [10] direction.

Interfacial Atomic Structures During Cobalt Silicidation

1990 ◽  
Vol 202 ◽  
Author(s):  
A. Catana ◽  
P.E. Schmid
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Atomic Scale ◽  
Type B ◽  
Cross Sectional ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Predominant Orientation ◽  
Lower Temperature

ABSTRACTHigh Resolution Electron Microscopy (HREM) and image calculations are combined to study microstructural changes related to the CoSi/Si-CoSi/CoSi2/Si-CoSi2/Si transformations. The samples are prepared by UHV e-beam evaporation of Co layers (2 nm) followed by annealing at 300°C or 400°C. Cross-sectional observations at an atomic scale show that the silicidation of Co at the lower temperature yields epitaxial CoSi/Si domains such that [111]Si // [111]CoSi and <110>Si // <112>CoSi. At about 400°C CoSi2 nucleates at the CoSi/Si interface. During the early stages of this chemical reaction, an epitaxial CoSi/CoSi2/Si system is observed. The predominant orientation is such that (021) CoSi planes are parallel to (220) CoSi2 planes, the CoSi2/Si interface being of type B. The growth of CoSi2 is shown to proceed at the expense of both CoSi and Si.

Interfacial structure and interfacial reactions at the MgO/Al2O3 interface

1991 ◽  
Vol 49 ◽  
pp. 696-697
Author(s):  
D. X. Li ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Molecular Beam ◽  
Interfacial Structure ◽  
Cross Sectional ◽  
Resolution Electron ◽  
High Resolution Electron Microscope ◽  
Electron Microscope Image ◽  
Image Simulations ◽  
Standard Techniques

MgO films were deposited on the (sample A), (0001)Al2O3 (sample B), and the (sample C) planes of sapphire by Molecular Beam Epitaxy (MBE). Cross-sectional UREM specimens were prepared using standard techniques and examined in a top-entry JEOL 4000FX high resolution electron microscope. Image simulations were performed using the SHRLI programs developed by O'Keefe.

Combined Experimentaland Theoretical Determination of the Atomic Structure of the (310) Twin in NB

1991 ◽  
Vol 238 ◽  
Author(s):  
Geoffrey H. Campbells ◽  
Wayne E. King ◽  
Stephen M. Foiles ◽  
Peter Gumbsch ◽  
Manfred Rühle
Keyword(s):  
High Resolution ◽  
Theoretical Models ◽  
High Resolution Electron Microscopy ◽  
Interatomic Potentials ◽  
Image Simulation ◽  
Theoretical Determination ◽  
Atomic Structures ◽  
Resolution Electron ◽  
High Resolution Images

ABSTRACTA (310) twin boundary in Nb has been fabricated by diffusion bonding oriented single crystals and characterized using high resolution electron microscopy. Atomic structures for the boundary have been predicted using different interatomic potentials. Comparison of the theoretical models to the high resolution images has been performed through image simulation. On the basis of this comparison, one of the low energy structures predicted by theory can be ruled out.

HIGH RESOLUTION ELECTRON MICROSCOPE STUDY OF CdTe-Cd0.6Mn0.4 Te SUPERLATTICES

1985 ◽  
Vol 56 ◽  
Author(s):  
C. CHOI ◽  
N. OTSUKA ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR-a
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Phase Contrast ◽  
Electron Microscope Study ◽  
Lattice Mismatch ◽  
Thick Layer ◽  
High Resolution Electron Microscopy ◽  
Misfit Dislocations ◽  
Resolution Electron ◽  
High Resolution Electron Microscope

AbstractStructures of CdTe-Cd0.6Mn0.4Te superlattices which are caused by the lattice mismatch between suterlattice layers have been studied by high resolution electron microscopy (HREM). In thin-layer superlattices, the crystal lattice in each layeris elastically distorted, resulting in the change of the crystal symmetry from cubic to rhombohedral. The presence of the small rhombohedral distrotion has been confirmed through a phase contrast effect in HREM images. In a thick-layer superlattice, the lattice mismatch is accommodated by dissociated misfit dislocations. Burgers vectors of partial misfit dislocations have been identified from the shift of lattice fringes in HREM images.

Observation of the CdTe-GaAs Interface by High Resolution Electron Microscopy

1984 ◽  
Vol 37 ◽  
Author(s):  
N. Otsuka ◽  
L. A. Kolodziejski ◽  
R. L. Gunshor ◽  
S. Datta ◽  
R. N. Bicknell ◽  
...  
Keyword(s):  
High Resolution ◽  
Film Growth ◽  
Substrate Surface ◽  
High Resolution Electron Microscopy ◽  
Gaas Substrates ◽  
Resolution Electron ◽  
Interfacial Structures ◽  
Substrate Preheating ◽  
High Resolution Electron Microscope

AbstractCdTe films have been grown on GaAs substrates with two types of interfaces - one with the epitaxial relation (111)CdTe║ (100)GaAs and the other with (100)CdTe║ (100)GaAs,. High resolution electron microscope observation of the two types of interfaces was carried out in order to determine the role of the substrate surface microstructure in determining the epitaxy. The interface of the former type shows a direct contact between the CdTe and GaAs crystals, while the interface of the latter type has a very thin oxide layer (∼10 Å in thickness) between the two crystals. These observations suggest that details of the substrate preheating cycle prior to film growth is the principle factor in determining which epitaxial relation occurs in this system. The relation between interfacial structures and the origin of the two epitaxial relations is discussed.

The ultrastructure of coccoliths from the marine alga Emiliania huxleyi (Lohmann) Hay and Mohler: an ultra-high resolution electron microscope study

1983 ◽  
Vol 219 (1215) ◽  
pp. 111-117 ◽  
Keyword(s):  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Emiliania Huxleyi ◽  
Growth Patterns ◽  
Lattice Image ◽  
Nucleation Sites ◽  
Resolution Electron ◽  
Lattice Images ◽  
High Resolution Electron Microscope ◽  
Diffraction Patterns

The calcite coccoliths from the alga Emiliania huxleyi (Lohmann) Hay and Mohler have been studied by ultra-high resolution electron microscopy. This paper describes the two different types of structure observed, one in the upper elements, the other in the basal plate, or lower element. The former consisted of small, microdomain structures of 300-500 Å (1 Å = 10 -10 m) in length with no strong orientation. At places along these elements, and particularly in the junction between stem and head pieces, triangular patterns of lattice fringes were observed indicating multiple nucleation sites in the structure. In contrast, the lower element consisted of a very thin single crystalline sheet of calcite which could be resolved into a two dimensional lattice image, shown by a computer program that is capable of simulating electron diffraction patterns and lattice images to be a [421] zone of calcite. A possible mechanism for these growth patterns in the formation of coccoliths is discussed, together with the relevance of such mechanisms to biomineralization generally.

Cross sectional Tem Sample Preparation Using E-Beam Lithography and Reactive ion Etching

1997 ◽  
Vol 480 ◽  
Author(s):  
Hyun-Jin Cho ◽  
Peter B. Griffin ◽  
James D. Plummer
Keyword(s):  
Electron Microscopy ◽  
Reactive Ion Etching ◽  
High Resolution Electron Microscopy ◽  
Ion Milling ◽  
Cross Sectional ◽  
Simple Method ◽  
Ion Etching ◽  
Resolution Electron ◽  
Specific Device ◽  
Short Time

AbstractA simple method to make cross sectional TEM samples of Si and GaAs semiconductor devices at specific device locations using electron beam (e-beam) lithography and reactive ion etching is described. The basic idea of this technique is to form pillar or line type patterns thin enough to be transparent to electron beams used in transmission electron microscopy. Since the entire process is conducted in the semiconductor fabrication facility, reliable samples were efficiently obtained within a short time without mechanical polishing or ion milling. High Resolution Electron Microscopy (HREM) images of SiGe and GaAs multilayer structures were obtained by this method. Using the alignment function of the e-beam lithography system, cross sectional TEM samples at specific locations of MOS transistors were obtained. The samples were thin enough to obtain HREM images of atomic level defects in the device.

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