A New Method For Calibrating Focusing Steps Of Electron Microscopes

1985 ◽  
Vol 43 ◽  
pp. 68-69
Author(s):  
Tung Hsu
Keyword(s):  
Electron Microscopy ◽  
Dark Field ◽  
New Method ◽  
Depth Of Field ◽  
Objective Lens ◽  
Focus Position ◽  
Bright Field ◽  
Surface Steps ◽  
Reflection Electron Microscopy ◽  
Electron Microscopes

Focusing steps of an electron microscope, i.e., the change of focus, Δf, corresponding to one click on any one of the focus dials must be calibrated. Two methods have been used; measuring the distance between bright field and dark field images of small crystalline particles and measuring the diameters of optical diffractograms obtained from the image of an amorphous specimen.A new method utilizing the large depth of field in reflection electron microscopy (REM) provides a direct means of measuring the focusing steps on the micrograph. The in focus area in an REM image can be recognized as the “least grainy” part or the minimum contrast of images of steps. Using surface steps, particles, or other features as References, the shift of this in focus position due to the variation of objective lens current can be readily measured on the micrograph. This distance is then converted to f by taking account of magnification (calibrated) and the foreshortening factor (calculated from the diffraction pattern).

Reflection Electron Microscopy and Diffraction from Crystal Surfaces

1983 ◽  
Vol 31 ◽  
Author(s):  
J.M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Surface Structure ◽  
Crystal Surfaces ◽  
Local Composition ◽  
Surface Steps ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Reflection Electron Microscopy ◽  
Electron Microscopes ◽  
Geometric Effects

ABSTRACTThe recent revival of techniques for the imaging of crystal surfaces, using electrons forward-scattered in the RHEED mode and employing modern electron microscopes, has lead to the introduction of valuable new methods for the study of surface structure. Either fixed beam or scanning transmission electron microscopy (STEM) instruments may be used and in each case a lateral resolution of 10Å or better is possible. Simple theoretical treatments suggest that the contrast from surface steps may be attributed to a combination of phase-contrast, diffraction contrast and geometric effects. With a STEM instrument the image information can be combined with information on the local composition and crystal structure by use of microanalysis and microdiffraction techniques. Examples of applications include studies of the surface structure of metals, semiconductors and oxides, and the surface reactions.

Reflection Electron Microscopy (REM) of Surface Steps & Dislocations on GaP(110) & GaAs(110)

1982 ◽  
Vol 40 ◽  
pp. 450-451
Author(s):  
Tung Hsu ◽  
Sumio Iijima
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Heating Stage ◽  
Surface Steps ◽  
Reflection Electron Microscopy ◽  
Electron Microscopes ◽  
High Vacuum Environment

Reflection electron microscopy (REM) in ultra high vacuum environment with heating stage has been reported by Osakabe, et al. In this paper, we present our results in REM imaging of single steps and dislocations using commercial electron microscopes (JEM-100B and Philips-400T) under ordinary pressure (10-7 torr) and room temperature.

Experimental High Resolution Dark Field Electron Microscopy

1977 ◽  
Vol 35 ◽  
pp. 142-143
Author(s):  
Larry Pierce ◽  
Peter R. Buseck
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Dark Field ◽  
Objective Lens ◽  
Aperture Size ◽  
Bright Field ◽  
Chromatic Aberrations ◽  
Field Electron Microscopy ◽  
Dark Field Electron ◽  
Diffraction Patterns

High resolution dark field (DF) images of the superstructures of the pyrrhotite (Fe1-xS) and bornite-digenite (Cu5FeS4-Cu9S5) series can be related to structure. Further, they provide more detail than bright field (BF) images. The same objective aperture size and stigmater settings were used for DF as for BF imaging; symmetrical arrangements of diffracted beams in the objective aperture were used. Images that can be related to structure were obtained at the defocus value giving the greatest image contrast, thereby enabling proper defocusing without requiring extensive through-focus series.For the minerals of interest, diffraction patterns consist of many superstructure reflections and a few subcell reflections. BF images contain primarily features of the superstructure, presumably because the subcell reflections fall far from the axis of the objective lens and thus are affected by spherical and chromatic aberrations and beam divergence. Likewise, DF images formed with a similar arrangement of beams as that in BF contain only features of superstructure, but with reverse contrast to BF.

Zero-loss omega-filtered REM and RHEED on the new Zeiss 912

1991 ◽  
Vol 49 ◽  
pp. 616-617
Author(s):  
J.C.H. Spence ◽  
J. Mayer
Keyword(s):  
Electron Microscopy ◽  
Materials Science ◽  
Surface States ◽  
Ccd Camera ◽  
Dark Field ◽  
Ion Pump ◽  
Magnetic Imaging ◽  
Reflection Electron Microscopy ◽  
Diffraction Patterns ◽  
Large Background

The Zeiss 912 is a new fully digital, side-entry, 120 Kv TEM/STEM instrument for materials science, fitted with an omega magnetic imaging energy filter. Pumping is by turbopump and ion pump. The magnetic imaging filter allows energy-filtered images or diffraction patterns to be recorded without scanning using efficient parallel (area) detection. The energy loss intensity distribution may also be displayed on the screen, and recorded by scanning it over the PMT supplied. If a CCD camera is fitted and suitable new software developed, “parallel ELS” recording results. For large fields of view, filtered images can be recorded much more efficiently than by Scanning Reflection Electron Microscopy, and the large background of inelastic scattering removed. We have therefore evaluated the 912 for REM and RHEED applications. Causes of streaking and resonance in RHEED patterns are being studied, and a more quantitative analysis of CBRED patterns may be possible. Dark field band-gap REM imaging of surface states may also be possible.

Reflection electron microscopy of as-grown diamond surfaces

1993 ◽  
Vol 51 ◽  
pp. 1006-1007
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Electron Microscopy ◽  
Synthetic Diamond ◽  
High Energy ◽  
Dark Field ◽  
Reverse Direction ◽  
Diamond Surfaces ◽  
Grain Sizes ◽  
Synthetic Diamonds ◽  
De Beers ◽  
Reflection Electron Microscopy

It has been found that the abrasion of diamond-on-diamond depends on the crystal orientation. For a {100} face, the friction coefficient for sliding along <011> is much higher than that along <001>. For a {111} face, the abrasion along <11> is different from that in the reverse direction <>. To interpret these effects, a microcleavage mechanism was proposed in which the {100} and {111} surfaces were assumed to be composed of square-based pyramids and trigonal protrusions, respectively. Reflection electron microscopy (REM) has been applied to image the microstructures of these diamond surfaces.{111} surfaces of synthetic diamond:The synthetic diamonds used in this study were obtained from the De Beers Company. They are in the as-grown condition with grain sizes of 0.5-1 mm without chemical treatment or mechanical polishing. By selecting a strong reflected beam in the reflection high-energy electron diffraction (RHEED) pattern, the dark-field REM image of the surface is formed (Fig. 1).

Contrasts of planar defects in reflection electron microscopy

1993 ◽  
Vol 51 ◽  
pp. 1004-1005
Author(s):  
Feng Tsai ◽  
J. M. Cowley
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Practical Importance ◽  
Theoretical Treatment ◽  
Crystal Surfaces ◽  
Planar Defects ◽  
Surface Steps ◽  
Surface Reconstructions ◽  
Domain Boundaries ◽  
Reflection Electron Microscopy

Reflection electron microscopy (REM) has been used to study surface defects such as surface steps, dislocations emerging on crystal surfaces, and surface reconstructions. However, only a few REM studies have been reported about the planar defects emerging on surfaces. The interaction of planar defects with surfaces may be of considerable practical importance but so far there seems to be only one relatively simple theoretical treatment of the REM contrast and very little experimental evidence to support its predications. Recently, intersections of both 90° and 180° ferroelectric domain boundaries with BaTiO3 crystal surfaces have been investigated by Tsai and Cowley with REM.The REM observations of several planar defects, such as stacking faults and domain boundaries have been continued by the present authors. All REM observations are performed on a JEM-2000FX transmission electron microscope. The sample preparations may be seen somewhere else. In REM, the incident electron beam strikes the surface of a crystal with a small glancing angle.

Imaging properties of bright-field and annular-dark-field scanning confocal electron microscopy

2010 ◽  
Vol 111 (1) ◽  
pp. 20-26 ◽  
Author(s):  
K. Mitsuishi ◽  
A. Hashimoto ◽  
M. Takeguchi ◽  
M. Shimojo ◽  
K. Ishizuka
Keyword(s):  
Electron Microscopy ◽  
Dark Field ◽  
Bright Field ◽  
Annular Dark Field ◽  
Imaging Properties

Field of View and Image Distortion : A Review of Low Magnification Imaging In the Environmental and Conventional Scanning Electron Microscopes (SEM)

1997 ◽  
Vol 3 (S2) ◽  
pp. 1193-1194
Author(s):  
Brendan J. Griffin
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Field Of View ◽  
Depth Of Field ◽  
Aperture Size ◽  
Sem Image ◽  
Electron Microscopes ◽  
Working Distance ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Most scanning electron microscopy is performed at low magnification; applications utilising the large depth of field nature of the SEM image rather than the high resolution aspect. Some environmental SEMs have a particular limitation in that the field of view is restricted by a pressure limiting aperture (PLA) at the beam entry point of the specimen chamber. With the original ElectroScan design, the E-3 model ESEM utilised a 500 urn aperture which gave a very limited field of view (∼550um diameter at a 10mm working distance [WD]). An increase of aperture size to ∼lmm provided an improved but still unsatisfactory field of view. The simplest option to increase the field of view in an ESEM was noted to be a movement of the pressure and field, limiting aperture back towards the scan coils1. This approach increased the field of view to ∼2mm, at a 10mm WD. A commercial low magnification device extended this concept and indicated the attainment of conventional fields of view.

High Resolution Imaging of As-Grown Sapphire Surfaces

1985 ◽  
Vol 62 ◽  
Author(s):  
Tung Hsu ◽  
S. R. Nutt
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Features ◽  
High Resolution Imaging ◽  
Sapphire Surface ◽  
Surface Steps ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Resolution Imaging ◽  
Surface Facets

ABSTRACTSurfaces of commercially grown edge-defined film-fed growth sapphire (EFG α-Al2O3) were studied in the electron microscope using both reflection electron microscopy (REM) and conventional transmission electron microscopy (TEM). The as-grown sapphire surface, ostensibly {1120}, was characterized by “rooftop” structures which were often locally periodic. These rooftop structures consisted of alternating {1120} facets and additional facets inclined a few degrees. The crystallography of the surface facets was analyzed using REM imaging of bulk specimens, and trace analysis of back-thinned plan section TEM specimens. Surface roughness was measured by stylus profilometry. and these measurements were compared to the electron microscopy observations. Fine structural features parallel to <0110> directions were also observed in both REM and TEM experiments, and these were attributed to surface steps of atomic scales.

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