High-resolution z-contrast imaging of semiconductor interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154317 ◽

1989 ◽

Vol 47 ◽

pp. 468-469

Author(s):

S. J. Pennycook

Keyword(s):

High Resolution ◽

Phase Contrast ◽

Contrast Imaging ◽

Compositional Modulation ◽

Semiconductor Interfaces ◽

Complex Figure ◽

Thin Region ◽

Stem Image ◽

Annular Detector ◽

Z Contrast

Using a high-angle annular detector on a high-resolution STEM it is possible to form incoherent images of a crystal lattice characterized by strong atomic number or Z contrast. Figure 1 shows an epitaxial Ge film on Si(100) grown by oxidation of Ge-implanted Si. The image was obtained using a VG Microscopes' HB501 STEM equipped with an ultrahigh resolution polepiece (Cs ∽1.2 mm, demonstrated probe FWHM intensity ∽0.22 nm). In both crystals the lattice is resolved but that of Ge shows much brighter allowing the interface to be located exactly and interface steps to be resolved (arrowed). The interface was indistinguishable in the phase-contrast STEM image from the same region, and even at higher resolution the location of the interface is complex. Figure 2 shows a thin region of an MBE-grown ultrathin super-lattice (Si8Ge2)100. The expected compositional modulation would show as one bright row of dots from the 2 Ge monolayers separated by 4 rows of lighter Si columns. The image shows clearly that strain-induced interdiffusion has occurred on the monolayer scale.

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Simulation and Quantification of High-Resolution Z-Contrast Imaging of Semiconductor Interfaces

MRS Proceedings ◽

10.1557/proc-159-439 ◽

1989 ◽

Vol 159 ◽

Cited By ~ 1

Author(s):

D. E. Jesson ◽

S. J. Pennycook ◽

M. F. Chisholm

Keyword(s):

High Resolution ◽

Cross Section ◽

Image Interpretation ◽

Bloch Wave ◽

Small Computer ◽

High Angle ◽

Contrast Imaging ◽

Resolution Function ◽

Semiconductor Interfaces ◽

Z Contrast

ABSTRACTIncoherent characteristics of Z-contrast STEM images are explained using a Bloch wave approach. To a good approximation, the image is given by the columnar high-angle cross-section multiplied by the s-state intensity at the projected atom sites, convoluted with an appropriate resolution function. Consequently, image interpretation can be performed intuitively and quantitative simulation can be implemented on a small computer. The feasibility of ‘column-by-column’ compositional mapping is discussed.

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Z-Contrast Imaging of Grain-Boundary Core Structures in Semiconductors

MRS Bulletin ◽

10.1557/s0883769400033820 ◽

1997 ◽

Vol 22 (8) ◽

pp. 53-57 ◽

Cited By ~ 17

Author(s):

M.F. Chisholm ◽

S.J. Pennycook

Keyword(s):

High Resolution ◽

Grain Boundary ◽

Grain Boundaries ◽

Phase Contrast ◽

Atomic Scale ◽

Resolving Power ◽

Boundary Structure ◽

Contrast Imaging ◽

Contrast Technique ◽

Z Contrast

Interest in semiconductor grain boundaries relates to the development of polycrystalline materials for photovoltaics and integrated-circuit interconnects. Although these structures are responsible for deleterious electrical effects, there are few experimental techniques available to study them at the required atomic scale. Therefore models of the physical processes occurring at grain boundaries have necessarily taken a macroscopic approach. Fortunately recent developments have resulted in tools that provide unprecedented glimpses into these interfaces and that will allow us to address anew the connection between grain-boundary structure and properties.Z-Contrast ImagingWhen exploring the unknown, we rely heavily on our eyes (incoherent imaging) to provide a direct image of a new object. In order to explore the unforeseen atomic configurations present at extended defects in materials, it again would be desirable if one could obtain a directly interpretable image of the unfamiliar structures present in the defect cores. Z-contrast electron microscopy provides such a view with both atomic resolution and compositional sensitivity.This high-resolution imaging technique differs from conventional high-resolution phase-contrast imaging. The phase-contrast technique produces a coherent image, an interference pattern formed by recombining the waves diffracted by the specimen. In the Z-contrast technique, the image is incoherent; it is essentially a map of the scattering power of the specimen. Additionally as was first determined by Lord Rayleigh, the incoherent mode of image formation has double the resolving power of the coherent mode.

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