In situ studies of deformation at interfaces

Author(s):  
William A. T. Clark

During the last twenty-five years there have been a number of studies of dislocation motion and interactions performed in the electron microscope. In general these observations have been limited by a number of technical shortcomings which have compromised their usefulness. In recent years, however, significant developments in the design and construction of specimen stages and in systems for recording in situ experiments in real time in the electron microscope have led to a renewed interest in dynamic experiments. One such application is the study of the interaction of dislocations with interfaces in polycrystalline solids, a topic which is of fundamental interest in understanding the laws which govern macroscopic deformation. It has been clearly demonstrated that in situ experiments are essential to this investigation, as they have provided direct observation of deformation mechanisms which conventional TEM analyses, in which the samples are deformed before they are put in the microscope, cannot. The two types of TEM observations provide complementary information, each greatly enhancing the value of the other.

2005 ◽  
Vol 20 (7) ◽  
pp. 1814-1824 ◽  
Author(s):  
Martin Bartsch ◽  
Peter Schall ◽  
Michael Feuerbacher ◽  
Ulrich Messerschmidt

Decagonal single quasicrystals of the composition Al70Ni15Co15have been deformed in situ in a high-voltage transmission electron microscope at 730 °C along the 10-fold periodic axis to directly observe the dislocation motion. The deformation is carried by stress-assisted climb of dislocations with periodic Burgers vectors. These dislocations may also glide and move by a combination of glide and climb. Dislocations with Burgers vectors with components in the periodic and quasiperiodic directions probably move under the action of a chemical force. The observations are interpreted by a model established by P. Schall et al. under consideration of the activation parameters of macroscopic deformation and by analogies with the behavior of icosahedral quasicrystals.


Author(s):  
Patrick Echlin ◽  
David Kynaston ◽  
Paul M. Knights

An ion source has been designed to operate in the chamber of the Stereoscan scanning electron microscope and provides facilities for etching specimens in situ. The source is a demountable cold cathode discharge type requiring only simple control.The ion beam described above has been used to progressively etch away hard or resilient biological material. This is the first time that ion beam etching of botanical specimens has been followed inside the scanning microscope, and marks the beginning of a range of dynamic experiments using this form of instrumentation.


Author(s):  
R. Hull ◽  
J.C. Bean ◽  
F. Ross

We have studied deformation mechanisms at epitaxial semiconductor interfaces, primarily in the GexSi1-x/Si and InxGa1-xAs/GaAs systems, by in-situ annealing of metastably strained films in the transmission electron microscope (TEM). This allows direct, real-time, observation and recording of dynamic strain relaxation phenomena such as misfit dislocation nucleation, propagation and interaction mechanisms. This geometry also allows considerable insight into fundamental dislocation physics, as we are able, for example, to accurately quantify dislocation propagation velocities as functions of well-defined effective stresses (in the 108 - 109 pa regime)in the epitaxial layers, and to vary dislocation structure and character by varying the orientation of the epitaxial interface. Comparison with measurements of dislocation velocities in bulk semiconductors and with models of dislocation motion via kink propagation, allows extension of existing measurements and models to the thin film, high stress regime.


1993 ◽  
Vol 308 ◽  
Author(s):  
Veronique T. Gillard ◽  
David B. Noble ◽  
William D. Nix

ABSTRACTThis paper presents data for threading dislocation velocities measured in Si-Ge heteroepitaxial thin films during in situ HVTEM annealing experiments. These data are compared to three models which were previously developed to describe the kink mode of dislocation motion. Two of these models, Hirth and Lothe [1] and Seeger-Schiller [2], are based on the discrete narrow kink representation. The other, developed by Büttiker and Landauer [3], is based on the macroscopic bulge model representation of the dislocation line. It is found that both the narrow kink models underestimate dislocation velocities in the stress range of the experiments and that a good representation of the data can be obtained by using the macroscopic bulge model in the dislocation length-dependent regime.


2018 ◽  
Vol 385 ◽  
pp. 65-71 ◽  
Author(s):  
Enrique Alabort ◽  
Daniel Barba ◽  
Roger Reed

Surface observations are used to elucidate the deformation mechanisms responsible forsuperplasticity in the Ti-6Al-4V and Ti-4Al-2.5V-1.5Fe titanium alloys. First, stress relaxation testsare used to quantify the difference in superplastic behaviour of each alloy. Then, high-temperature insitutensile tests are performed in the scanning electron microscope at 700, 800, and 900°C to relatedifferences in formability to micro-mechanisms. These are found highly dependent on: (i) the grainsize; (ii) the alpha-to-beta volume fraction; (iii) the crystallographic texture; and (iv) the nature and angle ofthe dominant grain boundaries.


MRS Bulletin ◽  
1994 ◽  
Vol 19 (6) ◽  
pp. 17-21 ◽  
Author(s):  
Frances M. Ross

This issue of the MRS Bulletin aims to highlight the innovative and exciting materials science research now being done using in situ electron microscopy. Techniques which combine real-time image acquisition with high spatial resolution have contributed to our understanding of a remarkably diverse range of physical phenomena. The articles in this issue present recent advances in materials science which have been made using the techniques of transmission electron microscopy (TEM), including holography, scanning electron microscopy (SEM), low-energy electron microscopy (LEEM), and high-voltage electron microscopy (HVEM).The idea of carrying out dynamic experiments involving real-time observation of microscopic phenomena has always had an attraction for materials scientists. Ever since the first static images were obtained in the electron microscope, materials scientists have been interested in observing processes in real time: we feel that we obtain a true understanding of a microscopic phenomenon if we can actually watch it taking place. The idea behind “materials science in the electron microscope” is therefore to use the electron microscope—with its unique ability to image subtle changes in a material at or near the atomic level—as a laboratory in which a remarkable variety of experiments can be carried out. In this issue you will read about dynamic experiments in areas such as phase transformations, thin-film growth, and electromigration, which make use of innovative designs for the specimen, the specimen holder, or the microscope itself. These articles speak for themselves in demonstrating the power of real-time analysis in the quantitative exploration of reaction mechanisms.The first transmission electron microscopes operated at low accelerating voltages, up to about 100 kV. This placed a severe limitation on the thickness of foils that could be examined: Heavy elements, for example, had to be made into foils thinner than 0.1 μm. It was felt that any phenomenon whose “mean free path” was comparable to the foil thickness would be significantly affected by the foil surfaces, and therefore would be unsuitable for study in situ. However, technology quickly generated ever higher accelerating voltages, culminating in the giant 3 MeV electron microscopes. At these voltages, electrons can penetrate materials as thick as 6–9 μm for light elements such as Si and Al, and 1 μm for very heavy ones such as Au and U.


1998 ◽  
Vol 552 ◽  
Author(s):  
U. Messerschmidt ◽  
M. Bartsch ◽  
S. Guder ◽  
D. Häussler

ABSTRACTIn situ straining experiments on NiAl, NiAl-0.2at% Ta, γ-TiAl, and MoSi2 in a high-voltage electron microscope showed a transition from the obstacle controlled dislocation motion or the Peierls mechanism at low temperatures to either an unstable or viscous motion at high temperatures. It is suggested that the viscous motion is due to the formation of point defect atmospheres around the dislocations, which cause additional drag and may be responsible for the flow stress anomaly in some of these materials. The atmospheres may be of an extrinsic or an intrinsic nature. A new model is proposed for the origin of intrinsic atmospheres assuming that the energy of a dislocation in an intermetallic alloy may be lowest if the dislocations contain a number of point defects in their core. The dragging of atmospheres may lead to an “inverse” dependence of the strain rate sensitivity on the strain rate, as observed experimentally. The macroscopic deformation data of the studied materials are discussed in terms of the model.


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