Pinning of 90° domain boundaries at interface dislocations in BaTiO3/LaAIO3 {100}

1996 ◽  
Vol 54 ◽  
pp. 124-125
Author(s):  
Z.-R. Dai ◽  
Z.L. Wang ◽  
X.F. Duan ◽  
J. Zhang
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Epitaxial Thin Films ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Potential Applications ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Epitaxially grown BaTiO3 thin films have potential applications in microelectronics and integrated photonics. The ferroelectric property of this material is largely determined by the domain structure. It is believed that the structure of the substrate would have profound effect on the quality of BaTiO3 epitaxial thin films. This paper reports our studies on the pinning of 90° domain boundaries at interface dislocations.Epitaxial BaTiO3 thin films were deposited on single crystalline LaAIO3 (100) substrates at 800°C by metal-organic chemical vapor deposition (MOCVD). Cross-section specimens of the films were studied at 200 kV using an JEOL 2010 high-resolution transmission electron microscope (HRTEM).

Effect of Growth Temperature on Cobalt-Doped TiO2 Thin Films Deposited on Si (100) Substrate by MOCVD Technique

2014 ◽  
Vol 896 ◽  
pp. 192-196 ◽  
Author(s):  
Aip Saripudin ◽  
H. Saragih ◽  
Khairurrijal ◽  
Khairurrijal ◽  
Pepen Arifin
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Anatase Phase ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Vapor Deposition Technique ◽  
Metal Organic ◽  
Titanium Dioxide Thin Films ◽  
Organic Chemical Vapor Deposition

Co:TiO2 (cobalt-doped titanium dioxide) thin films have been deposited on the n-type Si (100) substrate at the temperatures range of 325°C 450°C using MOCVD (metal organic chemical vapor deposition) technique. We investigated the effect of growth temperature on the structural and morphological quality of Co:TiO2 thin films. The structure of Co:TiO2 thin films were characterized by XRD while the morphology and the thickness of films were characterized by SEM. The XRD results reveal that all films show the anatase structure and the dominant orientation of anatase phase depends on the growth temperature. The grain size of crystal increases as the growth temperature increases. We also reveal that the growth rate of Co:TiO2 film has a maximum value at the growth temperature of 400°C.

Metal Organic Chemical Vapor Deposition of Co-, Mn-, Co-Zr and Mn-Zr Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
D. Barreca ◽  
F. Benetollo ◽  
M. Bozza ◽  
S. Bozza ◽  
G. Carta ◽  
...  
Keyword(s):  
Thin Films ◽  
Water Vapor ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Decomposition Efficiency ◽  
Mn Oxides

AbstractDeposition of thin films of Co- and Mn- oxides as well as of their mixtures with ZrO2 have been carried out by MOCVD using Co(C5H5)2, Mn(C5F6HO2)2(THF)2and (C5Hs)2Zr(CH3)2as precursors. XRD and XPS analyses of the obtained deposits are reported. Introduction of water vapor into the reactor chamber during the flow of the precursors improved their decomposition efficiency and the quality of the films.

Ferroelectric Domain Boundaries Induced by Interface Mismatch Dislocations in BaTiO3/LaAlO3

1996 ◽  
Vol 466 ◽  
Author(s):  
Z. L. Wang ◽  
Z. R. Dai
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ferroelectric Domain ◽  
Organic Chemical ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTInterface microstractures of BaTiO3/LaAlO3 grown by metal-organic chemical vapor deposition (MOCVD) are studied using high-resolution transmission electron microscopy (HRTEM). Interface dislocations in BaTiO3/LaAlO3 have been shown to be directly linked with the 90° domain boundaries in BaTiO3. This association is a result of strain relief due to a phase transformation on cooling from the growth temperature. The {100} surfaces of BaTiO3 are terminated with the Ba-O layer.

Properties of Tin Oxide Films Prepared by MOCVD

2004 ◽  
Vol 449-452 ◽  
pp. 997-1000 ◽  
Author(s):  
Gwang Pyo Choi ◽  
Yong Joo Park ◽  
Whyo Sup Noh ◽  
Jin Seong Park
Keyword(s):  
Thin Films ◽  
Oxygen Content ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Tin Oxide Films ◽  
N2 Annealing

Tin oxide thin films were deposited at 375 °C on α-alumina substrate by metal-organic chemical vapor deposition (MOCVD) process. A number of hillocks on the film were formed after air annealing at 500 °C for 30 min and few things in N2 annealing. The oxygen content and the binding energy after air annealing came to close the stoichiometric SnO2. The cauliflower hillocks of the film seem to be formed by the continuous migration of crystallites from a cauliflower grain on the substrate to release the stress due to the increase of oxygen content and volume.

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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