Metal Organic Chemical Vapor Deposition of Co-, Mn-, Co-Zr and Mn-Zr Oxide Thin Films

AbstractDeposition of thin films of Co- and Mn- oxides as well as of their mixtures with ZrO2 have been carried out by MOCVD using Co(C5H5)2, Mn(C5F6HO2)2(THF)2and (C5Hs)2Zr(CH3)2as precursors. XRD and XPS analyses of the obtained deposits are reported. Introduction of water vapor into the reactor chamber during the flow of the precursors improved their decomposition efficiency and the quality of the films.

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Growth of gallium oxide thin films on silicon by the metal organic chemical vapor deposition method

Materials Science and Engineering B ◽

10.1016/j.mseb.2004.01.012 ◽

2004 ◽

Vol 110 (1) ◽

pp. 34-37 ◽

Cited By ~ 47

Author(s):

Hyoun Woo Kim ◽

Nam Ho Kim

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Gallium Oxide ◽

Chemical Vapor ◽

Organic Chemical ◽

Chemical Vapor Deposition Method ◽

Deposition Method ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Domain structure of epitaxial PbTiO3 thin films on LaAlO3(100) grown by metal organic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.369203 ◽

1999 ◽

Vol 85 (2) ◽

pp. 853-860 ◽

Cited By ~ 12

Author(s):

Bi Ming Yen ◽

Haydn Chen

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Domain Structure ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Properties of Tin Oxide Films Prepared by MOCVD

Materials Science Forum ◽

10.4028/www.scientific.net/msf.449-452.997 ◽

2004 ◽

Vol 449-452 ◽

pp. 997-1000 ◽

Cited By ~ 3

Author(s):

Gwang Pyo Choi ◽

Yong Joo Park ◽

Whyo Sup Noh ◽

Jin Seong Park

Keyword(s):

Thin Films ◽

Oxygen Content ◽

Tin Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Tin Oxide Films ◽

N2 Annealing

Tin oxide thin films were deposited at 375 °C on α-alumina substrate by metal-organic chemical vapor deposition (MOCVD) process. A number of hillocks on the film were formed after air annealing at 500 °C for 30 min and few things in N2 annealing. The oxygen content and the binding energy after air annealing came to close the stoichiometric SnO2. The cauliflower hillocks of the film seem to be formed by the continuous migration of crystallites from a cauliflower grain on the substrate to release the stress due to the increase of oxygen content and volume.

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Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2006.08.030 ◽

2007 ◽

Vol 515 (5) ◽

pp. 2921-2925 ◽

Cited By ~ 27

Author(s):

Chunyu Wang ◽

Volker Cimalla ◽

Genady Cherkashinin ◽

Henry Romanus ◽

Majdeddin Ali ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Low Temperature ◽

Indium Oxide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Transparent Conducting ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Study on ZrO2:Er Thin Films Fabricated by Metal-Organic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2839 ◽

2003 ◽

Vol 42 (Part 1, No. 5A) ◽

pp. 2839-2842 ◽

Cited By ~ 2

Author(s):

Jeong Hoon Park ◽

Kug Sun Hong ◽

Woon Jo Cho ◽

Jang-Hoon Chung

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Deposition of Sm2O3 doped CeO2 thin films from Ce(DPM)4 and Sm(DPM)3 (DPM=2,2,6,6-tetramethyl-3,5-heptanedionato) by aerosol-assisted metal–organic chemical vapor deposition

Thin Solid Films ◽

10.1016/j.tsf.2005.12.184 ◽

2006 ◽

Vol 510 (1-2) ◽

pp. 88-94 ◽

Cited By ~ 9

Author(s):

Yinzhu Jiang ◽

Haizheng Song ◽

Qianli Ma ◽

Guangyao Meng

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Metal Organic ◽

Doped Ceo2 ◽

Organic Chemical Vapor Deposition

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Metal-organic chemical vapor deposition of ZrO2 films using Zr(thd)4 as precursors

Journal of Materials Research ◽

10.1557/jmr.1994.1721 ◽

1994 ◽

Vol 9 (7) ◽

pp. 1721-1727 ◽

Cited By ~ 22

Author(s):

Jie Si ◽

Seshu B. Desu ◽

Ching-Yi Tsai

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Film Deposition ◽

Organic Chemical ◽

Deposition Rates ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Deposited Films

Synthesis of zirconium tetramethylheptanedione [Zr(thd)4] was optimized. Purity of Zr(thd)4 was confirmed by melting point determination, carbon, and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). By using Zr(thd)4, excellent quality ZrO2 thin films were successfully deposited on single-crystal silicon wafers by metal-organic chemical vapor deposition (MOCVD) at reduced pressures. For substrate temperatures below 530 °C, the film deposition rates were very small (⋚1 nm/min). The film deposition rates were significantly affected by (i) source temperature, (ii) substrate temperature, and (iii) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO2 phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to a high-temperature post-deposition annealing. The optical properties of the ZrO2 thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO2 films. The model predicated the deposition rates well for various conditions in the hot wall reactor.

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