Preparation and characterization of La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 superconducting bilayers

2013 ◽  
Vol 28 (S1) ◽  
pp. S7-S11
Author(s):  
Y. Zhang ◽  
Y.H. An ◽  
Y. Xing ◽  
D.Y. Dong ◽  
S.L. Wang ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Electrical Transport Properties ◽  
Bilayer Films ◽  
Deposition Parameters ◽  
Surface Morphologies

The c-oriented La1.8Sr0.2CuO4 and La1.9Sr0.1CuO4 bilayer films were deposited on (001) SrTiO3 single-crystal substrates by using the pulsed laser deposition technique. The effects of deposition parameters on the quality of thin films were investigated. The crystal structures and surface morphologies were characterized by means of XRD and SEM, and the results showed that an as-prepared film deposited with the optimized parameters has high quality. Then La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 bilayers structure was prepared using the optimized parameters for each corresponding layer, and the electrical transport properties were measured. Interesting rectifying properties were observed at both room and low temperatures, and the rectifying ratio at low temperature was found to be much higher than that at room temperature.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

Characterization of zinc oxide thin films prepared by pulsed laser deposition at room temperature

2008 ◽  
Vol 202 (22-23) ◽  
pp. 5467-5470 ◽  
Author(s):  
Norihiro Sakai ◽  
Yoshihiro Umeda ◽  
Fumiaki Mitsugi ◽  
Tomoaki Ikegami
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Growth of BN Thin Films by Pulsed Laser Deposition

1991 ◽  
Vol 235 ◽  
Author(s):  
J. A. Knapp
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Strong Function ◽  
Ablation Plasma ◽  
Clean Sample

ABSTRACTA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

Pulsed Laser Deposition of Poly(Tetrafluoroethylene) Films

1995 ◽  
Vol 397 ◽  
Author(s):  
D.L. Kjendal ◽  
Ashok Kumar ◽  
R.B. Inturi ◽  
J. A. Barnard
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Nano Indentation ◽  
Corning Glass ◽  
Deposition Parameters ◽  
Compositional Properties

ABSTRACTThin films of poly(tetrafluoroethylene) have been deposited on amorphous (7059 Corning Glass) and silicon(l00) substrates at various temperatures by the Pulsed Laser Deposition technique. The deposition was carried out at high vacuum (˜10-6 torr)at temperatures ranging from room temperature to 350°C. The mechanical properties of these films at the varying process temperatures have been evaluated by nano-indentation techniques and compositional properties of the films have been characterized by Fourier Transform Infrared spectroscopy. The deposition parameters have been optimized in order to produce good quality films.

scholarly journals Lead potassium niobate thin films grown by Pulsed Laser Deposition

2016 ◽  
Vol vol1 (1) ◽  
Author(s):  
Billal Allouche ◽  
Yaovi Gagou ◽  
M. El Marssi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Potassium Niobate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Out Of Plane

By pulsed laser deposition, lead potassium niobate Pb2KNb5O15 was grown on (001) oriented Gd3Ga5O12 substrate using a platinum buffer layer. The PKN thin films were characterized by X-Ray diffraction and Scanning Electron Microscopy (SEM). The dependence of their structural properties as a function of the deposition parameters was studied. It has been found that the out of plane orientation of PKN film depends on the oxygen pressure used during the growth. Indeed, PKN thin film is oriented [001] for low pressure and is oriented [530] for high pressure. For these two orientations, the crystalline quality of PKN film was determined using omega scans.

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