Sample Preparation for Precise and Quantitative Electron Holographic Analysis of Semiconductor Devices

2006 ◽  
Vol 12 (4) ◽  
pp. 295-301 ◽  
Author(s):  
Myung-Geun Han ◽  
Jing Li ◽  
Qianghua Xie ◽  
Peter Fejes ◽  
James Conner ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Phase Changes ◽  
Electron Holography ◽  
Gate Length ◽  
Ion Milling ◽  
Minimum Thickness ◽  
Transmission Electron ◽  
Silica Suspension ◽  
Length Separation ◽  
Effect Transistor

Wedge polishing was used to prepare one-dimensional Si n-p junction and Si p-channel metal-oxide-silicon field effect transistor (pMOSFET) samples for precise and quantitative electrostatic potential analysis using off-axis electron holography. To avoid artifacts associated with ion milling, cloth polishing with 0.02-μm colloidal silica suspension was used for final thinning. Uniform thickness and no significant charging were observed by electron holography analysis for samples prepared entirely by this method. The effect of sample thickness was investigated and the minimum thickness for reliable results was found to be ∼160 nm. Below this thickness, measured phase changes were smaller than expected. For the pMOSFET sample, quantitative analysis of two-dimensional electrostatic potential distribution showed that the metallurgical gate length (separation between two extension junctions) was ∼54 nm, whereas the actual gate length was measured to be ∼70 nm by conventional transmission electron microscopy. Thus, source and drain junction encroachment under the gate was 16 nm.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Introduction to electron holography

1994 ◽  
Vol 52 ◽  
pp. 396-397
Author(s):  
M. R. McCartney
Keyword(s):  
Spherical Aberration ◽  
Phase Changes ◽  
Phase Image ◽  
Objective Lens ◽  
Phase Plate ◽  
Electron Holography ◽  
Imaging Method ◽  
Electron Sources ◽  
Transmission Electron ◽  
Magnetic Potentials

Electron holography is an imaging method in the transmission electron microscope (TEM) whereby the phase and amplitude of the electron wavefront can be obtained separately, unlike the conventional image which represents the intensity of the electron wave without any direct phase information. In particular, the phase image allows for the possibility of directly imaging the electric and magnetic potentials within a sample on the basis of phase changes produced on the incident electron wavefront. There are many advantages to directly imaging the phase structure and specific examples of the unique information available will be shown. For example, once the phase image is obtained it is possible to correct for the phase changes imposed by the transfer function of the objective lens by directly applying an inverse phase plate.Electron holography was originally proposed in 1949 by Gabor as a means of improving the resolution of electron micrography by correction of spherical aberration but was never fully utilized due to inadequate electron sources. In recent years, the availability of reliable field emission guns as coherent electron sources has stimulated renewed interest in the technique.

Probing the electrostatic potential of charged dislocations inn−GaNandn−ZnOepilayers by transmission electron holography

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
E. Müller ◽  
D. Gerthsen ◽  
P. Brückner ◽  
F. Scholz ◽  
Th. Gruber ◽  
...  
Keyword(s):  
Electrostatic Potential ◽  
Electron Holography ◽  
Transmission Electron

Off-Axis Electron Holography of Unbiased and Reverse-Biased Focused Ion Beam Milled Sip-nJunctions

2005 ◽  
Vol 11 (1) ◽  
pp. 66-78 ◽  
Author(s):  
Alison C. Twitchett ◽  
Rafal E. Dunin-Borkowski ◽  
Robert J. Hallifax ◽  
Ronald F. Broom ◽  
Paul A. Midgley
Keyword(s):  
Electrostatic Potential ◽  
Reverse Bias ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Electron Holography ◽  
Thin Sample ◽  
Transmission Electron ◽  
Milled Sample

Off-axis electron holography is used to measure electrostatic potential profiles across a siliconp-njunction, which has been prepared for examination in the transmission electron microscope (TEM) in two different specimen geometries using focused ion beam (FIB) milling. Results are obtained both from a conventional unbiased FIB-milled sample and using a novel sample geometry that allows a reverse bias to be applied to an FIB-milled samplein situin the TEM. Computer simulations are fitted to the results to assess the effect of TEM specimen preparation on the charge density and the electrostatic potential in the thin sample.

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

Comparative Microstructures of Ion Milled and Electrochemically Thinned Composite Materials

1974 ◽  
Vol 32 ◽  
pp. 546-547
Author(s):  
R.R. Russell
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Composite Materials ◽  
Great Difficulty ◽  
Ion Milling ◽  
Transmission Electron ◽  
Ion Damage ◽  
Intermetallic Composite

Transmission electron microscopy of metallic/intermetallic composite materials is most challenging since the microscopist typically has great difficulty preparing specimens with uniform electron thin areas in adjacent phases. The application of ion milling for thinning foils from such materials has been quite effective. Although composite specimens prepared by ion milling have yielded much microstructural information, this technique has some inherent drawbacks such as the possible generation of ion damage near sample surfaces.

An Electron Microscope Study of Interdiffusion and Compound Formation in Ta-Au Thin Films

1973 ◽  
Vol 31 ◽  
pp. 32-33 ◽  
Author(s):  
T. C. Tisone ◽  
S. Lau
Keyword(s):  
Electron Microscope ◽  
Electron Microscope Study ◽  
Thermally Grown Oxide ◽  
Ion Milling ◽  
Compound Formation ◽  
Technology Application ◽  
Transmission Electron ◽  
Before And After ◽  
Au Thin Films

In a study of the properties of a Ta-Au metallization system for thin film technology application, the interdiffusion between Ta(bcc)-Au, βTa-Au and Ta2M-Au films was studied. Considered here is a discussion of the use of the transmission electron microscope(TEM) in the identification of phases formed and characterization of the film microstructures before and after annealing.The films were deposited by sputtering onto silicon wafers with 5000 Å of thermally grown oxide. The film thicknesses were 2000 Å of Ta and 2000 Å of Au. Samples for TEM observation were prepared by ultrasonically cutting 3mm disks from the wafers. The disks were first chemically etched from the silicon side using a HNO3 :HF(19:5) solution followed by ion milling to perforation of the Au side.

Electron holography in materials science

1991 ◽  
Vol 49 ◽  
pp. 670-671
Author(s):  
Hannes Lichte ◽  
Edgar Voelkl
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Materials Science ◽  
Fourier Spectrum ◽  
Object Wave ◽  
Electron Holography ◽  
Reconstruction Procedure ◽  
Numerical Reconstruction ◽  
Transmission Electron ◽  
Unique Interpretation

The object wave o(x,y) = a(x,y)exp(iφ(x,y)) at the exit face of the specimen is described by two real functions, i.e. amplitude a(x,y) and phase φ(x,y). In stead of o(x,y), however, in conventional transmission electron microscopy one records only the real intensity I(x,y) of the image wave b(x,y) loosing the image phase. In addition, referred to the object wave, b(x,y) is heavily distorted by the aberrations of the microscope giving rise to loss of resolution. Dealing with strong objects, a unique interpretation of the micrograph in terms of amplitude and phase of the object is not possible. According to Gabor, holography helps in that it records the image wave completely by both amplitude and phase. Subsequently, by means of a numerical reconstruction procedure, b(x,y) is deconvoluted from aberrations to retrieve o(x,y). Likewise, the Fourier spectrum of the object wave is at hand. Without the restrictions sketched above, the investigation of the object can be performed by different reconstruction procedures on one hologram. The holograms were taken by means of a Philips EM420-FEG with an electron biprism at 100 kV.

Reconstruction of electron holograms recorded in a non-FEG, non-biprism TEM

1995 ◽  
Vol 53 ◽  
pp. 618-619
Author(s):  
Z.L. Wang
Keyword(s):  
Electron Microscope ◽  
Single Crystal ◽  
Experimental Technique ◽  
Transmission Electron Microscope ◽  
The Other ◽  
Electron Holography ◽  
Transmission Electron ◽  
Coherent Sources ◽  
Imaging Theory ◽  
Normal Specimen

An experimental technique for performing electron holography using a non-FEG, non-biprism transmission electron microscope (TEM) has been introduced by Ru et al. A double stacked specimens, one being a single crystal foil and the other the specimen, are loaded in the normal specimen position in TEM. The single crystal, which is placed onto the specimen, is responsible to produce two beams that are equivalent to two virtual coherent sources illuminating the specimen beneath, thus, permitting electron holography of the specimen. In this paper, the imaging theory of this technique is described. Procedures are introduced for digitally reconstructing the holograms.

Sign in / Sign up

Export Citation Format

Share Document