Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

Automated End-Point Detection and Targeted Ar+ Milling of Advanced Integrated Circuit FIB TEM Specimens

2017 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
J.T. Harbaugh ◽  
M. Boccabella ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
End Point Detection ◽  
Point Detection ◽  
Argon Ion

Abstract The sub-nanometer resolution that transmission electron microscopy (TEM) provides is critical to the development and fabrication of advanced integrated circuits. TEM specimens are usually prepared using the focused ion beam, which can cause gallium-induced artifacts and amorphization. This work presents the use of a concentrated argon ion beam for reproducible TEM specimen preparation using automatic milling termination and targeted ion milling of device features; the result is high-quality and electron-transparent specimens of less than 30 nm. Such work is relevant for semiconductor product development and failure analysis.

High-Quality Sample Preparation by Low kV FIB Thinning for Analytical TEM Measurements

2007 ◽  
Vol 13 (2) ◽  
pp. 80-86 ◽  
Author(s):  
Sara Bals ◽  
Wim Tirry ◽  
Remco Geurts ◽  
Zhiqing Yang ◽  
Dominique Schryvers
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
Ion Milling ◽  
High Quality ◽  
Transmission Electron ◽  
Quantitative Manner

Focused ion beam specimen preparation has been used for NiTi samples and SrTiO3/SrRuO3 multilayers with prevention of surface amorphization and Ga implantation by a 2-kV cleaning procedure. Transmission electron microscopy techniques show that the samples are of high quality with a controlled thickness over large scales. Furthermore, preferential thinning effects in multicompounds are avoided, which is important when analytical transmission electron microscopy measurements need to be interpreted in a quantitative manner. The results are compared to similar measurements acquired for samples obtained using conventional preparation techniques such as electropolishing for alloys and ion milling for oxides.

Narrow-Beam Argon Ion Milling of Ex Situ Lift-Out FIB Specimens Mounted on Various Carbon-Supported Grids

2018 ◽  
Author(s):  
M. J. Campin ◽  
C. S. Bonifacio ◽  
P. Nowakowski ◽  
P. E. Fischione ◽  
L. A. Giannuzzi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Carbon Support ◽  
Ex Situ ◽  
Specimen Preparation ◽  
Narrow Beam ◽  
Ion Milling ◽  
Preparation Methods ◽  
Argon Ion

Abstract The semiconductor industry recently has been investigating new specimen preparation methods that can improve throughput while maintaining quality. The result has been a combination of focused ion beam (FIB) preparation and ex situ lift-out (EXLO) techniques. Unfortunately, the carbon support on the EXLO grid presents problems if the lamella needs to be thinned once it is on the grid. In this paper, we show how low-energy (< 1 keV), narrow-beam (< 1 μm diameter) Ar ion milling can be used to thin specimens and remove gallium from EXLO FIB specimens mounted on various support grids.

Reduction of the Damage Induced in an Fib-Fabricated X-Tem Specimen

1998 ◽  
Vol 523 ◽  
Author(s):  
N. I. Kato ◽  
K. Tsujimoto ◽  
N. Miura
Keyword(s):  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Side Wall ◽  
Beam Current ◽  
Wet Etching ◽  
Ion Milling ◽  
Cross Sectional ◽  
20 Nm ◽  
Argon Ion

AbstractIn focused ion beam (FIB) fabrication of cross-sectional transmission electron microscopy (X-TEM) specimens, highly accelerated ion beams sometimes cause serious damage. The damage can be induced in both the specimen surface and in the side walls. We used X-TEM observations to investigate the side-wall damage induced by FIB fabrication in crystalline silicon. The damaged layer was found to be about 20 nm thick in the case of 30-keV FIB etching. We tried to reduce the damage by several methods, such as gas-assisted etching (GAE) with iodine, broad argon ion milling and wet etching. The damaged layer was 19 nm for GAE and 12 nm for argon ion milling with a beam current of 70 mA and the tilt angle between the beam and the specimen of 15 degrees. Wet etching using a mixture of nitric and hydrofluoric acid removes most of the damaged layer.

Preparation of TEM samples by focused ion beam (FIB) techniques: applications to the study of clays and phyllosilicates in meteorites

2003 ◽  
Vol 67 (3) ◽  
pp. 581-592 ◽  
Author(s):  
M. R. Lee ◽  
P. A. Bland ◽  
G. Graham
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Mixed Valence ◽  
Planetary Science ◽  
Basal Spacing ◽  
Ion Milling ◽  
Cut Edge ◽  
Transmission Electron ◽  
Study Results ◽  
Argon Ion

AbstractTransmission electron microscope samples were prepared of ALH 78045 and ALH 88045, two clay-and phyllosilicate-bearing Antarctic meteorites, using argon ion milling and focused ion beam (FIB) techniques. ALH 78045 contains clay- and phyllosilicate-filled veins that have formed by terrestrial weathering of olivine, orthopyroxene and metal. Very narrow (∼10 nm) intragranular clay-filled veins could be observed in the TEM samples prepared by argon ion milling, whereas differential thinning and lack of precision in the location of the electron-transparent areas hindered the study of wider (5 — 15 μm) phyllosilicate-filled intergranular veins. Using the FIB instrument, electron-transparent slices were cut from specific parts of the wider veins and lifted out for TEM study. Results show that these veins are occluded by cronstedtite, a mixed-valence Fe-rich phyllosilicate. This discovery shows that silicates can be both dissolved and precipitated during terrestrial weathering within the Antarctic ice. ALH 88045 is one of a small number of known CM1 carbonaceous chondrites. This meteorite is largely composed of flattened ellipsoidal aggregates of serpentine-group phyllosilicates. To determine the mineralogy and texture of phyllosilicates within specific aggregates, TEM samples were prepared by trenching into the cut edge of a sample using the FIB instrument. Results show that Mg-rich aggregates are composed of lath-shaped serpentine crystals with a ∼0.73 nm basal spacing, which is typical of the products of low temperature aqueous alteration within asteroidal parent bodies. Results of this work demonstrate that the FIB has enormous potential in a number of areas of Earth and planetary science.

Imaging Thin Films of Nanoporous Low-k Dielectrics: Comparison between Ultramicrotomy and Focused Ion Beam Preparations for Transmission Electron Microscopy

2005 ◽  
Vol 12 (2) ◽  
pp. 156-159 ◽  
Author(s):  
Leslie E. Thompson ◽  
Philip M. Rice ◽  
Eugene Delenia ◽  
Victor Y. Lee ◽  
Phillip J. Brock ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
Low K ◽  
Diamond Knife

Ultramicrotomy, the technique of cutting nanometers-thin slices of material using a diamond knife, was applied to prepare transmission electron microscope (TEM) specimens of nanoporous poly(methylsilsesquioxane) (PMSSQ) thin films. This technique was compared to focused ion beam (FIB) cross-section preparation to address possible artifacts resulting from deformation of nanoporous microstructure during the sample preparation. It was found that ultramicrotomy is a successful TEM specimen preparation method for nanoporous PMSSQ thin films when combined with low-energy ion milling as a final step. A thick, sacrificial carbon coating was identified as a method of reducing defects from the FIB process which included film shrinkage and pore deformation.

TEM Specimen Preparation of Oxidized Ni-Base Alloys using the Focused Ion Beam (FIB) Technique

2000 ◽  
Vol 6 (S2) ◽  
pp. 540-541
Author(s):  
K.L. More ◽  
D.W. Coffey ◽  
B.A. Pint ◽  
K.S. Trent ◽  
P.F. Tortorelli
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Alumina Scale ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
The Many ◽  
Native Surface

Microstructural characterization of thin alumina scales formed on oxidized Ni-base alloys using transmission electron microscopy (TEM) has long been a challenge as a result of the many problems encountered during the preparation of thin specimens. Successful and reproducible preparation of uniformly thin, cross-section TEM specimens from these multicomponent “layered” structures (alumina scale on a metallic substrate) is extremely difficult using standard ion beam thinning procedures for several reasons: (1) differential thinning of the various constituents in the system can occur, (2) a weak ceramic-metal interface may lead to separation during the harsh mechanical grinding and thinning procedure, (3) fully intact scales are rarely achieved since native surface structures are usually lost during ion milling, and (4) extensive damage can be created in the scale and alloy during rough grinding and polishing steps as well as during final ion beam thinning.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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