scholarly journals Sub-angstrom Spatial Resolution in Secondary-electron Imaging Achieved with an Aberration Corrected Scanning Electron Microscope

2010 ◽  
Vol 16 (S2) ◽  
pp. 610-611
Author(s):  
H Inada ◽  
D Su ◽  
M Konno ◽  
K Nakamura ◽  
RF Egerton ◽  
...  

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


Author(s):  
G. D. Danilatos

The environmental scanning electron microscope (ESEM) incorporates the functions of the conventional SEM while it has the added capability of allowing the examination of virtually any specimen in a gaseous environment. The main modes of imaging are all represented in the ESEM, and some developments with regard to the secondary electron (SE) mode are reported herewith.The conventional E-T detector fails to operate in the gaseous conditions of ESEM, but this obstacle has been overcome with the advent of a gaseous detection device (GDD). The principle of operation of this device is based on the monitoring of the products of interaction between signals and gas. Initially, the ionization from the signal/gas interaction was used to produce images of varying contrast and, later, the gaseous scintillation, from the same interaction, was also used to produce images. First, a low bias was applied to various electrodes but later a much higher bias was used for the purpose of achieving additional signal gain. By careful shaping and positioning the respective electrode, it was shown that SE imaging is possible in the ESEM. This has been also independently demonstrated by use of a special specimen preparation.



Scanning ◽  
1998 ◽  
Vol 20 (6) ◽  
pp. 436-441 ◽  
Author(s):  
A. Mohan ◽  
N. Khanna ◽  
J. Hwu ◽  
D. C. Joy


Author(s):  
T. Komoda ◽  
S. Saito ◽  
Y. Kakinuma ◽  
A. Okura

The authors have built a surface scanning electron microscope incorporating a field emission electron gun. The gun has a brightness almost three order of magnitude higher than that of the ordinary thermionic electron gun, which is promissing high resolution in the secondary electron imaging mode.Emission current fluctuation, which is one of the most serious problems in field emission guns, depends on the vacuum condition around the field emission tip. In order to provide a good vacuum environment, the gun assembly in this microscope is located in the center of an ion-pump system which is symmetrically laid out relative to the electron optical axis. Two tips are mounted on a turret holder and they are exchangeable from the outside without disturbing the vacuum in the gun chamber. A stable emission current of the order of 10μA is obtainable at the normal vacuum operation better than 5x10-10 Torr.



2000 ◽  
Vol 6 (S2) ◽  
pp. 774-775
Author(s):  
M. Toth ◽  
M.R. Phillips

The environmental scanning electron microscope (ESEM) employs a series of pressure limiting apertures and a differential pumping system to allow for electron imaging at specimen chamber pressures of up to 50 torr. Images rich in secondary electron (SE) contrast can be obtained using the gaseous secondary electron detector (GSED) or ion current (Iion) signals. The GSED and Iion signals are amplified in a gas cascade. SEs emitted from a sample are accelerated through the gas in the specimen chamber by an electric field, EGSED, produced by a positively biased electrode located in the chamber, above the specimen. The accelerated SEs give rise to a cascade ionization process that can amplify the SE signal by up to three orders of magnitude. Electrons produced in the cascade are rapidly swept to the biased electrode and are efficiently removed from the gas. Positive ions produced in the cascade drift away from the electrode with a velocity that is at least three orders of magnitude lower than that of the electrons.



Author(s):  
Oliver C. Wells

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.



Author(s):  
M.G. Rosenfield

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.



2008 ◽  
Vol 16 (4) ◽  
pp. 62-63
Author(s):  
V.M. Dusevich ◽  
J.H. Purk ◽  
J.D. Eick

Coloring pictures is an educational exercise, which is fun, and helps develop important skills. Coloring SEM micrographs is especially suitable for electron microscopists. Color micrographs are not just great looking on a lab wall; they inspire both microscopists and students to exercise digital picture manipulation. Many microscopists enjoyed looking at the beautiful color micrographs by D. Scharf, but were frustrated to learn they needed a very particular scanning electron microscope equipped with multiple secondary electron detectors in order to color their own pictures. Fortunately, there are other ways to color SEM micrographs. Most SEMs are equipped with at least two detectors, for secondary and backscattered electrons.



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