In Situ Reactivity and TOF-SIMS Analysis of Surfaces Prepared by Soft and Reactive Landing of Mass-Selected Ions

2010 ◽  
Vol 82 (13) ◽  
pp. 5718-5727 ◽  
Author(s):  
Grant E. Johnson ◽  
Michael Lysonski ◽  
Julia Laskin

2018 ◽  
Vol 54 (43) ◽  
pp. 5434-5437 ◽  
Author(s):  
Duo Xu ◽  
Xin Hua ◽  
Shao-Chuang Liu ◽  
Hong-Wei Qiao ◽  
Hua-Gui Yang ◽  
...  

A hybrid light/ToF-SIMS system was used to analyze the dynamic chemical changes of perovskite CH3NH3PbI3 materials under light illumination.



2013 ◽  
Vol 46 (4) ◽  
pp. 224-228 ◽  
Author(s):  
Li Yang ◽  
Zihua Zhu ◽  
Xiao-Ying Yu ◽  
Eugene Rodek ◽  
Lax Saraf ◽  
...  


2013 ◽  
Vol 5 (10) ◽  
pp. 2515 ◽  
Author(s):  
Li Yang ◽  
Zihua Zhu ◽  
Xiao-Ying Yu ◽  
Suntharampillai Thevuthasan ◽  
James P. Cowin


2020 ◽  
Author(s):  
Feifei Jia ◽  
Jie Wang ◽  
Yanyan Zhang ◽  
Qun Luo ◽  
Luyu Qi ◽  
...  

<p></p><p><i>In situ</i> visualization of proteins of interest at single cell level is attractive in cell biology, molecular biology and biomedicine, which usually involves photon, electron or X-ray based imaging methods. Herein, we report an optics-free strategy that images a specific protein in single cells by time of flight-secondary ion mass spectrometry (ToF-SIMS) following genetic incorporation of fluorine-containing unnatural amino acids as a chemical tag into the protein via genetic code expansion technique. The method was developed and validated by imaging GFP in E. coli and human HeLa cancer cells, and then utilized to visualize the distribution of chemotaxis protein CheA in E. coli cells and the interaction between high mobility group box 1 protein and cisplatin damaged DNA in HeLa cells. The present work highlights the power of ToF-SIMS imaging combined with genetically encoded chemical tags for <i>in situ </i>visualization of proteins of interest as well as the interactions between proteins and drugs or drug damaged DNA in single cells.</p><p></p>



2019 ◽  
Author(s):  
Adam Denny ◽  
◽  
Kouki Kitajima ◽  
Akizumi Ishida ◽  
Noriko T. Kita ◽  
...  


2008 ◽  
Vol 255 (5) ◽  
pp. 2388-2399 ◽  
Author(s):  
S. Achiwawanich ◽  
B.D. James ◽  
J. Liesegang
Keyword(s):  
Tof Sims ◽  


1998 ◽  
Vol 525 ◽  
Author(s):  
M. R. Mirabedini ◽  
V. Z-Q Li ◽  
A. R. Acker ◽  
R. T. Kuehn ◽  
D. Venables ◽  
...  

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.



2006 ◽  
Vol 78 (6) ◽  
pp. 1827-1831 ◽  
Author(s):  
John S. Fletcher ◽  
Xavier A. Conlan ◽  
Emrys A. Jones ◽  
Greg Biddulph ◽  
Nicholas P. Lockyer ◽  
...  
Keyword(s):  
Tof Sims ◽  


2004 ◽  
Vol 231-232 ◽  
pp. 302-308 ◽  
Author(s):  
Zhengmao Zhu ◽  
Michael J. Kelley
Keyword(s):  
Tof Sims ◽  


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