WHAT DO SEDIMENTARY SULFIDE δ34S VALUES ACTUALLY RECORD? IN SITU SEM-SIMS ANALYSIS OF FRAMBOIDS AND OTHER SULFIDE PHASES IN THE MISSISSIPPIAN-DEVONIAN BAKKEN FORMATION

2019 ◽  
Author(s):  
Adam Denny ◽  
◽  
Kouki Kitajima ◽  
Akizumi Ishida ◽  
Noriko T. Kita ◽  
...  
1998 ◽  
Vol 525 ◽  
Author(s):  
M. R. Mirabedini ◽  
V. Z-Q Li ◽  
A. R. Acker ◽  
R. T. Kuehn ◽  
D. Venables ◽  
...  

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.


2016 ◽  
Vol 27 (12) ◽  
pp. 2006-2013 ◽  
Author(s):  
Yufan Zhou ◽  
Juan Yao ◽  
Yuanzhao Ding ◽  
Jiachao Yu ◽  
Xin Hua ◽  
...  

2004 ◽  
Vol 36 (7) ◽  
pp. 640-644 ◽  
Author(s):  
S. K. Tan ◽  
K. L. Yeo ◽  
A. T. S. Wee

1999 ◽  
Vol 573 ◽  
Author(s):  
F. Ren ◽  
J. R. Lothian ◽  
S. J. Pearton ◽  
R. G. Wilson ◽  
J. R. LaRoche ◽  
...  

ABSTRACTWe demonstrated an in-situ dielectric film passivation technique by dividing a thick film deposition into many thin film (<40Å) depositions and incorporating the ion bombardment between the depositions. N2 was used for the plasma treatment to passivate the SiNx film and a well passivated and thermally stable SiNx was achieved with this process. The refractive index of N2 treated SiNx film only changed 0.3% when the SiNx film was heated up to 1000 °C and the film with a continuous deposition showed a 2.5% change. From the results of SIMS analysis, the N2 treated SiNx film showed a excellent thermal stability after heat up to 1000 °C. The etch rates of passivated SiNx film in BOE and diluted HF are ≤40 Å/min which is much slower than that of un-treated SiNx (135 Å/min).


2020 ◽  
Vol 117 (26) ◽  
pp. 14688-14693
Author(s):  
Simon Hammann ◽  
David J. Scurr ◽  
Morgan R. Alexander ◽  
Lucy J. E. Cramp

Traces of lipids, absorbed and preserved for millennia within the inorganic matrix of ceramic vessels, act as molecular fossils and provide manifold information about past people’s subsistence, diet, and rituals. It is widely assumed that lipids become preserved after adsorption into nano- to micrometer-sized pores, but to this day the distribution of these lipids in the ceramics was virtually unknown, which severely limits our understanding about the process of lipid preservation. Here we use secondary ion mass spectrometry (SIMS) imaging for directin situanalysis of lipids absorbed in 700- to 2,000-y-old archaeological pottery. After sectioning from larger sherds, wall cross-sections of smaller fragments were used for SIMS analysis. Lipids were found in relatively large zones of 5- to 400-µm diameter, which does not support the notion of absorption only into individual nanometer-scale pores but indicates that more macroscopic structures in the ceramics are involved in lipid preservation as well. Furthermore, lipids were found concentrated on calcium carbonate inclusions in the ceramics, which suggests that precipitation of fatty acids as calcium salts is an important aspect of lipid preservation in archaeological samples. This has important implications for analytical methods based on extraction of lipids from archaeological ceramics and needs to be considered to maximize the yield and available information from each unique sample.


1999 ◽  
Vol 147 (1-4) ◽  
pp. 14-18 ◽  
Author(s):  
S Seki ◽  
H Tamura ◽  
H Sumiya

1995 ◽  
Vol 412 ◽  
Author(s):  
A. Lodding ◽  
P. Van Iseghem

AbstractIn-situ corrosion tests on nuclear waste glasses in Boom clay provided direct contact glass-clay at 90°C, for periods of 2, 3.5 and 7.5 years. The corroded reference glasses (two R7T7 type glasses, four Pamela type glasses), were studied in terms of SIMS (secondary ion mass spectroscopy) and mass losses.The Al2O3 rich Pamela glasses appear to corrode in a selective-substitutional way, the other glasses dissolve almost congruently. Differences in the corrosion extent between the glasses are associated with compositional differences and secondary phase formation. SIMS analysis provides the reaction layer thickness and the relative element behaviour in this layer. Although relatively few, the data have provided a coherent picture of glass corrosion, in terms of corrosion mechanisms, time and glass composition dependence.


1998 ◽  
Vol 524 ◽  
Author(s):  
L.-S. Hsu ◽  
J. D. Denlinger ◽  
J. W. Allen

ABSTRACTIn this work, in-situ doped polysilicon and poly-SiGe films have been used as the gate material for the fabrication of MOS devices to evaluate their respective performances. These films were deposited in an RTCVD system using a Si2H6 and GeH4 gas mixture. MOS capacitors with 45 Å thick gate oxides and polysilicon/poly-SiGe gates were subjected to different anneals to study boron penetration. SIMS analysis and flat band voltage measurements showed much lower boron penetration for devices with poly-SiGe gates than for devices with polysilicon gates. In addition, C-V measurements showed no poly depletion effects for poly-SiGe gates while polysilicon gates had a depletion effect of about 8%. A comparison of resistivities of these films showed a low resistivity of 1 mΩ-cm for poly-SiGe films versus 3 mΩ-cm for polysilicon films after an anneal at 950 °C for 30 seconds.


2018 ◽  
Vol 54 (43) ◽  
pp. 5434-5437 ◽  
Author(s):  
Duo Xu ◽  
Xin Hua ◽  
Shao-Chuang Liu ◽  
Hong-Wei Qiao ◽  
Hua-Gui Yang ◽  
...  

A hybrid light/ToF-SIMS system was used to analyze the dynamic chemical changes of perovskite CH3NH3PbI3 materials under light illumination.


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