scholarly journals Correction to Depth-Profiling Microanalysis of CoNCN Water-Oxidation Catalyst Using a λ = 46.9 nm Plasma-Laser for Nano-Ionization Mass Spectrometry

2018 ◽  
Vol 90 (20) ◽  
pp. 12322-12322
Author(s):  
Rafael Müeller ◽  
Ilya Kuznetsov ◽  
Yunieski Arbelo ◽  
Matthias Trottmann ◽  
Carmen S. Menoni ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Water Oxidation ◽  
Depth Profiling ◽  
Oxidation Catalyst ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Plasma Laser

Depth-Profiling Microanalysis of CoNCN Water-Oxidation Catalyst Using a λ = 46.9 nm Plasma Laser for Nano-Ionization Mass Spectrometry

2018 ◽  
Vol 90 (15) ◽  
pp. 9234-9240 ◽  
Author(s):  
Rafael Müller ◽  
Ilya Kuznetsov ◽  
Yunieski Arbelo ◽  
Matthias Trottmann ◽  
Carmen S. Menoni ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Water Oxidation ◽  
Depth Profiling ◽  
Oxidation Catalyst ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Plasma Laser

Ion Microscopy with Resonant Ionization Mass Spectrometry: Time-of-Flight Depth Profiling with Improved Isotopic Precision

2010 ◽  
Vol 16 (3) ◽  
pp. 373-377 ◽  
Author(s):  
Michael J. Pellin ◽  
Igor V. Veryovkin ◽  
Jonathan Levine ◽  
Alexander Zinovev ◽  
Andrew M. Davis ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Time Of Flight ◽  
Depth Profiling ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Resonant Ionization ◽  
Ion Microscopy

Depth Profiling and Cross-Sectional Laser Ablation Ionization Mass Spectrometry Studies of Through-Silicon-Vias

2018 ◽  
Vol 90 (8) ◽  
pp. 5179-5186 ◽  
Author(s):  
Valentine Grimaudo ◽  
Pavel Moreno-García ◽  
Alena Cedeño López ◽  
Andreas Riedo ◽  
Reto Wiesendanger ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Laser Ablation ◽  
Depth Profiling ◽  
Ionization Mass Spectrometry ◽  
Ionization Mass ◽  
Cross Sectional ◽  
Through Silicon Vias ◽  
Silicon Vias

Quantitative Depth Profiling Resonance Ionization Mass Spectrometry of III-V Heterostructure Semiconductors

1991 ◽  
Vol 240 ◽  
Author(s):  
A. B. Emerson ◽  
S. W. Downey ◽  
R. F. Kopf
Keyword(s):  
Mass Spectrometry ◽  
Matrix Effects ◽  
Ion Beam ◽  
Depth Profiling ◽  
Quantitative Information ◽  
Ionization Mass Spectrometry ◽  
Resonance Ionization ◽  
Ionization Mass ◽  
Resonance Ionization Mass Spectrometry ◽  
Atomization Efficiency

ABSTRACTResonance ionization mass spectrometry (RIMS) of neutral atoms sputtered from III-V heterostructure semiconductor materials provides quantitative information about the dopant position near interfaces. The prerequisite for quantitative results is the saturation of the ionization step. The absolute signals are affected by primary ion beam parameters which affect sputter yield, atomization efficiency and quantum state partitioning, but not ionization efficiency. We have found that matrix effects are minimal and use RIMS results to help elucidate dopant migration near interfaces and interpret SIMS matrix effects. Device performance and understanding of materials growth are both aided.

Sign in / Sign up

Export Citation Format

Share Document