Photoelectron Spectroscopy and Ionic Fragmentation of OSeCl2 and Its Analogue OSCl2 under VUV Irradiation

2015 ◽  
Vol 119 (29) ◽  
pp. 8000-8009
Author(s):  
Mariana Geronés ◽  
Lucas S. Rodríguez Pirani ◽  
Mauricio F. Erben ◽  
Rosana M. Romano ◽  
Reinaldo L. Cavasso Filho ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ionic Fragmentation

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

Spatially Resolved Photoelectron Spectroscopy: Recent Progress and Future Plans

1990 ◽  
Vol 48 (2) ◽  
pp. 388-389
Author(s):  
A. M. Bradshaw
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Reactivity ◽  
Target Material ◽  
Orbital Energy ◽  
Light Sources ◽  
Analytical Technique ◽  
Hartree Fock ◽  
Spatially Resolved ◽  
Koopmans Theorem ◽  
Surface Analytical Technique

X-ray photoelectron spectroscopy (XPS or ESCA) was not developed by Siegbahn and co-workers as a surface analytical technique, but rather as a general probe of electronic structure and chemical reactivity. The method is based on the phenomenon of photoionisation: The absorption of monochromatic radiation in the target material (free atoms, molecules, solids or liquids) causes electrons to be injected into the vacuum continuum. Pseudo-monochromatic laboratory light sources (e.g. AlKα) have mostly been used hitherto for this excitation; in recent years synchrotron radiation has become increasingly important. A kinetic energy analysis of the so-called photoelectrons gives rise to a spectrum which consists of a series of lines corresponding to each discrete core and valence level of the system. The measured binding energy, EB, given by EB = hv−EK, where EK is the kineticenergy relative to the vacuum level, may be equated with the orbital energy derived from a Hartree-Fock SCF calculation of the system under consideration (Koopmans theorem).

X-ray photoelectron spectroscopy of some selenium containing amino acids

1975 ◽  
Vol 5 (1) ◽  
pp. 21-32
Author(s):  
H Rupp
Keyword(s):  
Amino Acids ◽  
Photoelectron Spectroscopy ◽  
X Ray

Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy

2006 ◽  
Vol 132 ◽  
pp. 87-90
Author(s):  
M. El Kazzi ◽  
G. Delhaye ◽  
S. Gaillard ◽  
E. Bergignat ◽  
G. Hollinger
Keyword(s):  
Photoelectron Spectroscopy ◽  
Two Dimensional ◽  
X Ray

BONDS IN AMORPHOUS Nb1-xSixSTUDIED BY X-RAY EMISSION AND X-RAY PHOTOELECTRON SPECTROSCOPY

1987 ◽  
Vol 48 (C9) ◽  
pp. C9-1025-C9-1028 ◽  
Author(s):  
W. ZAHOROWSKI ◽  
A. SIMUNEK ◽  
G. WIECH ◽  
K. SÖLDNER ◽  
R. KNAUF ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
X Ray

Carbon Film Deposition On Silicon Using Low Energy Ion Beams

1991 ◽  
Vol 223 ◽  
Author(s):  
Qin Fuguang ◽  
Yao Zhenyu ◽  
Ren Zhizhang ◽  
S.-T. Lee ◽  
I. Bello ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Carbon Film ◽  
Carbon Films ◽  
Film Deposition ◽  
Ion Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Post Implantation ◽  
Beam Deposition

ABSTRACTDirect ion beam deposition of carbon films on silicon in the ion energy range of 15–500eV and temperature range of 25–800°C has been studied using mass selected C+ ions under ultrahigh vacuum. The films were characterized with X-ray photoelectron spectroscopy, Raman spectroscopy, and transmission electron microscopy and diffraction analysis. Films deposited at room temperature consist mainly of amorphous carbon. Deposition at a higher temperature, or post-implantation annealing leads to formation of microcrystalline graphite. A deposition temperature above 800°C favors the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation was observed in these films.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

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