scholarly journals Reply to “Comment on ‘Spontaneous Polarization of Cryo-Deposited Films for Five Normal Saturated Monohydroxy Alcohols, CnH2n+1OH, n = 1–5’”

Author(s):  
Athanassios A. Tsekouras
2019 ◽  
Vol 123 (40) ◽  
pp. 8505-8511 ◽  
Author(s):  
Alexandra N. Pilidi ◽  
Irini K. Gavra ◽  
Athanassios A. Tsekouras

Author(s):  
Georgios M. Tourlakis ◽  
Sotirios Alexandros T. Adamopoulos ◽  
Irini K. Gavra ◽  
Alexandros A. Milpanis ◽  
Liveria F. Tsagri ◽  
...  

Films of polar molecules vapour-deposited on sufficiently cold substrates are not only amorphous, but also exhibit charge polarization across their thickness. This is an effect known for 50 years, but...


Author(s):  
S. Herd ◽  
S. M. Mader

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.


Author(s):  
Shozo Ikeda ◽  
Hirotoshi Hayakawa ◽  
Daniel R. Dietderich

Pb addition makes easier to form the high Tc phase in the BSCCO system. However, Pb easily vaporized at high temperature. A controlled Pb potential method has been applied to grow the high Tc phase in films. Initially, films are deposited on cleaved MgO substrates using an rf magnetron sputtering system. These amorphous as-deposited films are heat treated in a sealed gold capsule along with a large pellet of Pb-added BSCCO. Details of the process and characterization of the films have been reported elsewhere (1). Films trated for 0.5h at 850° C contain mainly the low Tc phase with a small amount of the high Tc phase. Hawever, films treated for 3h at 850°C consist mainly of the high Tc phase. This film is superconductive with a Tc(zero) of 106K. The Pb/Bi ratio of the films, analysed by SEM- EDS, are 0.12 and 0.18 for heat tratment times of 0.5 and 3h, respectively. The present study investigates the modulated structures of these films using HREM.


1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.


2002 ◽  
Vol 722 ◽  
Author(s):  
Ram W. Sabnis ◽  
Mary J. Spencer ◽  
Douglas J. Guerrero

AbstractNovel organic, polymeric materials and processes of depositing thin films on electronics substrates by chemical vapor deposition (CVD) have been developed and the lithographic behavior of photoresist coated over these CVD films at deep ultraviolet (DUV) wavelength has been evaluated. The specific monomers synthesized for DUV applications include [2.2](1,4)- naphthalenophane, [2.2](9,10)-anthracenophane and their derivatives which showed remarkable film uniformity on flat wafers and conformality over structured topography wafers, upon polymerization by CVD. The chemical, physical and optical properties of the deposited films have been characterized by measuring parameters such as thickness uniformity, solubility, conformality, adhesion to semiconductor substrates, ultraviolet-visible spectra, optical density, optical constants, defectivity, and resist compatibility. Scanning electron microscope (SEM) photos of cross-sectioned patterned wafers showed verticle profiles with no footing, standing waves or undercut. Resist profiles down to 0.10 νm dense lines and 0.09 νm isolated lines were achieved in initial tests. CVD coatings generated 96-100% conformal films, which is a substantial improvement over commercial spin-on polymeric systems. The light absorbing layers have high optical density at 248 nm and are therefore capable materials for DUV lithography applications. CVD is a potentially useful technology to extend lithography for sub-0.15 νm devices. These films have potential applications in microelectronics, optoelectronics and photonics.


1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.


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