scholarly journals Liquid-Assisted Vapor–Solid–Solid Silicon Nanowire Growth Mechanism Revealed by In Situ TEM When Using Cu–Sn Bimetallic Catalysts

Author(s):  
Éric Ngo ◽  
Weixi Wang ◽  
Pavel Bulkin ◽  
Ileana Florea ◽  
Martin Foldyna ◽  
...  
2016 ◽  
Vol 22 (S5) ◽  
pp. 60-61
Author(s):  
S.B. Alam ◽  
F. Panciera ◽  
M.M Norton ◽  
O. Hansen ◽  
F.M. Ross ◽  
...  

2021 ◽  
Author(s):  
Carina B. Maliakkal

Growing nanowires inside a transmission electron microscope (TEM) and observing the process in situ has contributed immensely to understanding nanowire growth mechanisms. Majority of such studies were on elemental semiconductors – either Si or Ge – both of which are indirect bandgap semiconductors. Several compound semiconductors on the other hand have a direct bandgap making them more efficient in several applications involving light absorption or emission. During compound nanowire growth using a metal catalyst, the difference in miscibility of the nanowire species inside the metal catalyst are different, making its growth dynamics different from elemental nanowires. Thus, studies specifically focusing on compound nanowires are necessary for understanding its growth dynamics. This chapter reviews the recent progresses in the understanding of compound semiconductor nanowire growth obtained using in situ TEM. The concentrations of the nanowire species in the catalyst was studied in situ. This concentration difference has been shown to enable independent control of layer nucleation and layer growth in nanowires. In situ TEM has also enabled better understanding of the formation of metastable crystal structures in nanowires.


Science ◽  
2014 ◽  
Vol 344 (6184) ◽  
pp. 623-626 ◽  
Author(s):  
R. Boston ◽  
Z. Schnepp ◽  
Y. Nemoto ◽  
Y. Sakka ◽  
S. R. Hall
Keyword(s):  

Author(s):  
Sardar B. Alam ◽  
Federico Panciera ◽  
Ole Hansen ◽  
Frances M Ross ◽  
Kristian Mølhave

2006 ◽  
Vol 12 (S02) ◽  
pp. 704-705
Author(s):  
JF Al-Sharab ◽  
RK Sadangi ◽  
V Shukla ◽  
BH Kear
Keyword(s):  

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006


Nanoscale ◽  
2013 ◽  
Vol 5 (11) ◽  
pp. 5086 ◽  
Author(s):  
Chung-Hua Chiu ◽  
Chun-Wei Huang ◽  
Jui-Yuan Chen ◽  
Yu-Ting Huang ◽  
Jung-Chih Hu ◽  
...  

Author(s):  
Charles W. Allen

Irradiation effects studies employing TEMs as analytical tools have been conducted for almost as many years as materials people have done TEM, motivated largely by materials needs for nuclear reactor development. Such studies have focussed on the behavior both of nuclear fuels and of materials for other reactor components which are subjected to radiation-induced degradation. Especially in the 1950s and 60s, post-irradiation TEM analysis may have been coupled to in situ (in reactor or in pile) experiments (e.g., irradiation-induced creep experiments of austenitic stainless steels). Although necessary from a technological point of view, such experiments are difficult to instrument (measure strain dynamically, e.g.) and control (temperature, e.g.) and require months or even years to perform in a nuclear reactor or in a spallation neutron source. Consequently, methods were sought for simulation of neutroninduced radiation damage of materials, the simulations employing other forms of radiation; in the case of metals and alloys, high energy electrons and high energy ions.


Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


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