Ultralong Single-Crystal α-Bi4Br4 Nanobelts with a High Current-Carrying Capacity by Mechanical Exfoliation

We describe the low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional ZrTe3 van der Waals nanoribbons, which have recently attracted attention owing to their extraordinary high current carrying capacity.

Download Full-text

Mechanical exfoliation and layer number identification of single crystal monoclinic CrCl3

Nanotechnology ◽

10.1088/1361-6528/ab7de6 ◽

2020 ◽

Vol 31 (39) ◽

pp. 395706 ◽

Cited By ~ 2

Author(s):

S Kazim ◽

M Alì ◽

S Palleschi ◽

G D’Olimpio ◽

D Mastrippolito ◽

...

Keyword(s):

Single Crystal ◽

Mechanical Exfoliation ◽

Layer Number

Download Full-text

The high current-carrying capacity of various carbon nanotube-based buckypapers

Nanotechnology ◽

10.1088/0957-4484/19/18/185710 ◽

2008 ◽

Vol 19 (18) ◽

pp. 185710 ◽

Cited By ~ 45

Author(s):

Jin Gyu Park ◽

Shu Li ◽

Richard Liang ◽

Xinyu Fan ◽

Chuck Zhang ◽

...

Keyword(s):

Carbon Nanotube ◽

Carrying Capacity ◽

High Current

Download Full-text

Structure of high-T c superconducting tape of the second generation with high current-carrying capacity

Bulletin of the Russian Academy of Sciences Physics ◽

10.3103/s1062873813080297 ◽

2013 ◽

Vol 77 (8) ◽

pp. 939-942 ◽

Cited By ~ 1

Author(s):

V. I. Nikolaichik ◽

I. I. Khodos ◽

G. L. Klimenko ◽

M. N. Kovalchuk

Keyword(s):

Carrying Capacity ◽

Second Generation ◽

High Current ◽

Superconducting Tape

Download Full-text

Challenges and State-of-the-Art of Oxides on SiC

MRS Proceedings ◽

10.1557/proc-640-h3.1 ◽

2000 ◽

Vol 640 ◽

Cited By ~ 1

Author(s):

Lori Lipkin ◽

Mrinal Das ◽

John Palmour

Keyword(s):

Single Crystal ◽

Band Gap ◽

High Voltage ◽

State Of The Art ◽

Wide Band ◽

High Current ◽

Power Devices ◽

Wide Band Gap ◽

Single Crystal Sic ◽

Lower Temperature

ABSTRACTSingle crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

Download Full-text