Novel Two-Dimensional Semiconductor SnP3 with High Carrier Mobility, Good Light Absorption, and Strong Interlayer Quantum Confinement

2018 ◽  
Vol 122 (42) ◽  
pp. 24359-24367 ◽  
Author(s):  
Li-Ping Feng ◽  
Ao Li ◽  
Pei-Chen Wang ◽  
Zheng-Tang Liu
2018 ◽  
Vol 5 (6) ◽  
pp. 1058-1064 ◽  
Author(s):  
Xiwen Zhang ◽  
Bing Wang ◽  
Xianghong Niu ◽  
Yunhai Li ◽  
Yunfei Chen ◽  
...  

Bi2OS2 nanosheets possess tunable anomalous layer-dependent bandgaps, derived from the synergetic effect of the quantum confinement and surface electron states.


2020 ◽  
Vol 22 (48) ◽  
pp. 28414-28422
Author(s):  
Yunzhi Gao ◽  
Kai Wu ◽  
Wei Hu ◽  
Jinlong Yang

Tellurene, a two-dimensional (2D) semiconductor, meets the requirements for optoelectronic applications with desirable properties, such as a suitable band gap, high carrier mobility, strong visible light absorption and high air stability.


2021 ◽  
Vol 9 (14) ◽  
pp. 4971-4977
Author(s):  
Mehmet Emin Kilic ◽  
Kwang-Ryeol Lee

Tetrahexagonal AlN: a novel two-dimensional family for photocatalytic water splitting with exceptional mechanical, electronic, and optical properties.


Author(s):  
Kai Ren ◽  
Huabing Shu ◽  
Wenyi Huo ◽  
Zhen Cui ◽  
Jin Yu ◽  
...  

Two-dimensional (2D) materials with moderate bandgap and high carrier mobility are decent for the applications in the optoelectronics. In this work, we present a systematically investigation of the mechanical, electronic...


2020 ◽  
Vol 22 (35) ◽  
pp. 20061-20068
Author(s):  
Siyun Qi ◽  
Yingcai Fan ◽  
Weifeng Li ◽  
Mingwen Zhao

The high carrier mobility, porous configurations and tunable electronic structures of two-dimensional (2D) carbon materials hold great promise in energy conversion and storage.


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