Metal Nanoclusters Modify the Band Gap and Maintain the Ultrathin Nature of Semiconducting Two-Dimensional Materials

2019 ◽  
Vol 123 (49) ◽  
pp. 29856-29865
Author(s):  
Fangzhi Yan ◽  
Chih-Kai Liao ◽  
Guanhua Wu ◽  
Stephan B. Bach ◽  
Mahmoud A. Mahmoud
2017 ◽  
Vol 96 (5) ◽  
Author(s):  
Banasree Sadhukhan ◽  
Prashant Singh ◽  
Arabinda Nayak ◽  
Sujoy Datta ◽  
Duane D. Johnson ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (14) ◽  
pp. 8016-8026 ◽  
Author(s):  
Fazel Shojaei ◽  
Maryam Azizi ◽  
Zabiollah Mahdavifar ◽  
Busheng Wang ◽  
Gilles Frapper

The physical and bonding properties of a new class of two-dimensional materials – CuXSe2 (X = Cl, Br) – are investigated using first-principles methods. 2D CuXSe2 are indirect band gap and possess extremely anisotropic and very high carrier mobilities.


Langmuir ◽  
2019 ◽  
Vol 35 (14) ◽  
pp. 4956-4965 ◽  
Author(s):  
Chih-Kai Liao ◽  
Jasmine Phan ◽  
Maura Herrera ◽  
Mahmoud A. Mahmoud

2021 ◽  
Vol 13 (34) ◽  
pp. 40922-40931
Author(s):  
Weifeng Zhang ◽  
Zihan Zhao ◽  
Yating Yang ◽  
Yan Zhang ◽  
He Hao ◽  
...  

Langmuir ◽  
2020 ◽  
Vol 36 (10) ◽  
pp. 2574-2583 ◽  
Author(s):  
Chih-Kai Liao ◽  
Jasmine Phan ◽  
Heber Martinez-Barron ◽  
Mahmoud A. Mahmoud

Nanoscale ◽  
2015 ◽  
Vol 7 (44) ◽  
pp. 18392-18401 ◽  
Author(s):  
L. M. Xie

Alloying allows broad band gap engineering and more for two-dimensional materials.


Nanoscale ◽  
2021 ◽  
Author(s):  
Shuyi Lin ◽  
Yu Guo ◽  
Meiling Xu ◽  
Jijun Zhao ◽  
Yiwei Liang ◽  
...  

Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...


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