B2N Monolayer: a Direct Band-Gap Semiconductor with High and Highly Anisotropic Carrier Mobility

Nanoscale ◽  
2021 ◽  
Author(s):  
Shuyi Lin ◽  
Yu Guo ◽  
Meiling Xu ◽  
Jijun Zhao ◽  
Yiwei Liang ◽  
...  
Keyword(s):  
Band Gap ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Two Dimensional ◽  
Planar Lattice ◽  
Direct Band Gap ◽  
Two Dimensional Materials ◽  
Direct Band

Two-dimensional materials with a planar lattice, a suitable direct band-gap, high and highly anisotropic carrier mobility are desirable for the development of advanced field-effect transistors. Here we predict three thermodynamically...

Penta-MX2 (M = Ni, Pd and Pt; X = P and As) monolayers: direct band-gap semiconductors with high carrier mobility

2019 ◽  
Vol 7 (12) ◽  
pp. 3569-3575 ◽  
Author(s):  
Shifeng Qian ◽  
Xiaowei Sheng ◽  
Xian Xu ◽  
Yuxiang Wu ◽  
Ning Lu ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Ring Network ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

Two-dimensional binary MX2 (M = Ni, Pd and Pt; X = P and As) exhibiting a beautiful pentagonal ring network is discussed through first principles calculations.

Two-dimensional Blue-AsP monolayers with tunable direct band gap and ultrahigh carrier mobility show promising high-performance photovoltaic properties

Nanoscale ◽  
2019 ◽  
Vol 11 (17) ◽  
pp. 8260-8269 ◽  
Author(s):  
Xinyong Cai ◽  
Yuanzheng Chen ◽  
Bai Sun ◽  
Jiao Chen ◽  
Hongyan Wang ◽  
...  
Keyword(s):  
Band Gap ◽  
High Performance ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Photovoltaic Properties ◽  
Direct Band Gap ◽  
Direct Band

Novel 2D Blue-AsP sheets show promising high-performance photovoltaic properties.

scholarly journals Ultrawide range tuning of direct band gap in MgZnO monolayer via electric field effect

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1392-1397 ◽  
Author(s):  
Hongfei Chen ◽  
Changlong Tan ◽  
Dan Sun ◽  
Wenbin Zhao ◽  
Xiaohua Tian ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Field Effect ◽  
2D Materials ◽  
Optoelectronic Devices ◽  
Building Blocks ◽  
Electric Field Effect ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band

Two-dimensional (2D) materials are building blocks for the next generation of electronic and optoelectronic devices.

Copper(i) sulfide: a two-dimensional semiconductor with superior oxidation resistance and high carrier mobility

2019 ◽  
Vol 4 (1) ◽  
pp. 223-230 ◽  
Author(s):  
Yu Guo ◽  
Qisheng Wu ◽  
Yunhai Li ◽  
Ning Lu ◽  
Keke Mao ◽  
...  
Keyword(s):  
Band Gap ◽  
Oxidation Resistance ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

δ-Cu2S sheets are energetically favorable, and exhibit superior oxidation resistance, suitable direct band gap, and ultrahigh carrier mobility.

A graphene-like Mg3N2monolayer: high stability, desirable direct band gap and promising carrier mobility

2016 ◽  
Vol 18 (44) ◽  
pp. 30379-30384 ◽  
Author(s):  
Peng-Fei Liu ◽  
Liujiang Zhou ◽  
Thomas Frauenheim ◽  
Li-Ming Wu
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
High Stability ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band ◽  
High Carrier Mobility ◽  
High Carrier

A novel two-dimensional material, g-Mg3N2, exhibits an intrinsic direct band gap of 1.86 eV, outstanding stability (2000 K) and a high carrier mobility of up to 103cm2V−1s−1which is larger than that of MoS2and close to that of few-layer phosphorene.

Two-Dimensional PC6 with Direct Band Gap and Anisotropic Carrier Mobility

2019 ◽  
Vol 141 (4) ◽  
pp. 1599-1605 ◽  
Author(s):  
Tong Yu ◽  
Ziyuan Zhao ◽  
Yuanhui Sun ◽  
Aitor Bergara ◽  
Jianyan Lin ◽  
...  
Keyword(s):  
Band Gap ◽  
Carrier Mobility ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

scholarly journals Theoretical investigations of a new two-dimensional semiconducting boron–carbon–nitrogen structure

RSC Advances ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 3424-3428
Author(s):  
Yihua Lu ◽  
Xi Zhu ◽  
Min Wang
Keyword(s):  
Band Gap ◽  
Two Dimensional ◽  
Direct Band Gap ◽  
Theoretical Investigations ◽  
Direct Band ◽  
Optical Applications ◽  
Boron Carbon

A predicted 2D BCN structure has a direct band gap and is a good candidate for electronic and optical applications.

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