High Annealing Stability of InAlZnO Nanofiber Field-Effect Transistors with Improved Morphology by Al Doping

The Journal of Physical Chemistry Letters ◽

10.1021/acs.jpclett.1c00030 ◽

2021 ◽

Vol 12 (4) ◽

pp. 1339-1345

Author(s):

Junyu He ◽

Xuhai Liu ◽

Longfei Song ◽

Hao Li ◽

Hongliang Zu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Al Doping ◽

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Fabrication of n-type carbon nanotube field-effect transistors by Al doping

Applied Physics Letters ◽

10.1063/1.2183818 ◽

2006 ◽

Vol 88 (10) ◽

pp. 103503 ◽

Author(s):

Hwangyou Oh ◽

Ju-Jin Kim ◽

Woon Song ◽

Sunkyung Moon ◽

Nam Kim ◽

...

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistors ◽

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APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981490 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-423-C4-432 ◽

Author(s):

P. G. Le Comber ◽

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Displays ◽

Logic Circuits ◽

Integrated Logic

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Construction of two-dimensional regression models of current-voltage characteristics of the output current of field-effect transistors using the information system PLExp

Izmeritel`naya Tekhnika ◽

10.32446/0368-1025it.2019-11-49-55 ◽

2019 ◽

pp. 49-55

Author(s):

N.Y. Baturina ◽

I.V. Kalienko

Keyword(s):

Information System ◽

Regression Models ◽

Field Effect ◽

Field Effect Transistors ◽

Two Dimensional ◽

Output Current ◽

Current Voltage ◽

Current Voltage Characteristics

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Ambipolar Characteristics of Solution Processed Bilayer Field Effect Transistors based on Poly(3-hexylthiophene) and fullerene derivatives

10.1557/proc-1115-h05-43 ◽

2008 ◽

Author(s):

Takeomi Morita ◽

Syuichi Nagamatsu ◽

Vipul Singh ◽

Shinya Oku ◽

Wataru Takashima ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Solution Processed ◽

Fullerene Derivatives

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Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

10.1557/proc-1115-h05-10 ◽

2008 ◽

Author(s):

Takafumi Uemura ◽

Masakazu Yamagishi ◽

Yukihiro Tominari ◽

Jun Takeya

Keyword(s):

Single Crystal ◽

Crystal Field ◽

Field Effect ◽

Field Effect Transistors ◽

Crystal Field Effect ◽

Organic Single Crystal

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Organic Three-dimensional Field-effect Transistors

10.1557/proc-1115-h03-03 ◽

2008 ◽

Author(s):

M. Uno ◽

I. Doi ◽

K. Takimiya ◽

Jun Takeya

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional

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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

IEICE Transactions on Electronics ◽

10.1587/transele.e95.c.885 ◽

2012 ◽

Vol E95.C (5) ◽

pp. 885-890 ◽

Author(s):

Min LIAO ◽

Hiroshi ISHIWARA ◽

Shun-ichiro OHMI

Keyword(s):

Electrical Properties ◽

Growth Mechanism ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulator ◽

Organic Field Effect Transistors

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A Calculation Model for Submicron Field-Effect Transistors Based on GaAs

Telecommunications and Radio Engineering ◽

10.1615/telecomradeng.v58.i7-8.90 ◽

2002 ◽

Vol 58 (7-8) ◽

pp. 9

Author(s):

S. A. Zuev ◽

V. V. Starostenko ◽

A. A. Shadrin

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Calculation Model

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Flow injection analysis using ion-sensitive field effect transistors

Scandinavian Journal of Clinical and Laboratory Investigation ◽

10.3109/00365518209168398 ◽

1982 ◽

Vol 42 ◽

pp. 35-41 ◽

Author(s):

J. Ruzicka ◽

A. Ramsing

Keyword(s):

Flow Injection ◽

Flow Injection Analysis ◽

Field Effect ◽

Field Effect Transistors

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Specification for harmonized system of quality assessment for electronic components. Blank detail specification: single gate field-effect transistors

10.3403/00150288 ◽

1978 ◽

Keyword(s):

Quality Assessment ◽

Field Effect ◽

Field Effect Transistors ◽

Electronic Components

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