scholarly journals H2O Dissociation-Induced Aluminum Oxide Growth on Oxidized Al(111) Surfaces

Langmuir ◽  
2015 ◽  
Vol 31 (48) ◽  
pp. 13117-13126 ◽  
Author(s):  
Qianqian Liu ◽  
Xiao Tong ◽  
Guangwen Zhou
Keyword(s):  
Author(s):  
Iwona Dobosz

AbstractPorous anodic aluminum oxide membranes were fabricated via two-step anodization of aluminum in 0.3 M H2C2O4, 0.3 M H2SO4 and 0.17 M H3PO4 solutions. The parameters of the oxide film such as: pore diameter (Dp), interpore distance (Dc), porosity (P) and pore density (ρ) can be completely controlled by the operating conditions of the anodization. Additionally, the pore diameters and pore density can be controlled via a chemical treatment (pore opening/widening process). The effect of anodizing conditions such as the applied voltage, type of electrolyte and purity of the substrate on the rate of porous oxide growth are discussed. The obtained results were compared with the theoretical predictions and data that has been reported in the literature. The influence of the duration of chemical etching on the structural features of the oxide membranes was studied. On the based on qualitative and quantitative FFT analyzes and circularity maps, it was found that the nanostructures of anodized aluminum have the maximum order under certain specified conditions. The presence of alloying elements affects not only the rate of oxide growth but also the morphology of the anodic aluminum oxide. The rate of oxide growth depends on the electrolyte type and temperature. During chemical treatment of the oxide films pore diameter increases with the pore widening time and the highest pore widening was observed in phosphoric acid solution.


2002 ◽  
Vol 745 ◽  
Author(s):  
Martin M. Frank ◽  
Yves J. Chabal ◽  
Glen D. Wilk

ABSTRACTThere is great need for a mechanistic understanding of growth chemistry during atomic layer deposition (ALD) of films for electronic applications. Since commercial ALD reactors are presently not equipped for in situ spectroscopy, we have constructed a model reactor that enables single-pass transmission infrared spectroscopy to be performed in situ on a layer-by-layer basis. We demonstrate the viability of this approach for the study of aluminum oxide growth on silicon surfaces, motivated by alternative gate oxide applications. Thanks to submonolayer dielectric and adsorbate sensitivity, we can quantify oxide thicknesses and hydroxyl areal densities on thermal and chemical SiO2/Si(100) substrates. Methyl formation and hydroxyl consumption upon initial trimethylaluminum (TMA) reaction can also be followed. We verify that in situ grown Al2O3 films are compatible in structure to films grown in a commercial ALD reactor.


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