Efficient Flexible Inorganic Perovskite Light-Emitting Diodes Fabricated with CsPbBr3 Emitters Prepared via Low-Temperature in Situ Dynamic Thermal Crystallization

Nano Letters ◽  
2020 ◽  
Vol 20 (6) ◽  
pp. 4673-4680
Author(s):  
Chen Chen ◽  
Tae-Hee Han ◽  
Shaun Tan ◽  
Jingjing Xue ◽  
Yepin Zhao ◽  
...  
Author(s):  
Wenjing Feng ◽  
Kebin Lin ◽  
Wenqiang Li ◽  
Xiangtian Xiao ◽  
Jianxun Lu ◽  
...  

Metal halide perovskite light-emitting diodes (PeLEDs) are promising in lighting and display application, and the corresponding device performance is highly dependent on the film quality of the active layer. However,...


2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Chenhui Wang ◽  
Dengbao Han ◽  
Junhui Wang ◽  
Yingguo Yang ◽  
Xinyue Liu ◽  
...  

AbstractIn the field of perovskite light-emitting diodes (PeLEDs), the performance of blue emissive electroluminescence devices lags behind the other counterparts due to the lack of fabrication methodology. Herein, we demonstrate the in situ fabrication of CsPbClBr2 nanocrystal films by using mixed ligands of 2-phenylethanamine bromide (PEABr) and 3,3-diphenylpropylamine bromide (DPPABr). PEABr dominates the formation of quasi-two-dimensional perovskites with small-n domains, while DPPABr induces the formation of large-n domains. Strong blue emission at 470 nm with a photoluminescence quantum yield up to 60% was obtained by mixing the two ligands due to the formation of a narrower quantum-well width distribution. Based on such films, efficient blue PeLEDs with a maximum external quantum efficiency of 8.8% were achieved at 473 nm. Furthermore, we illustrate that the use of dual-ligand with respective tendency of forming small-n and large-n domains is a versatile strategy to achieve narrow quantum-well width distribution for photoluminescence enhancement.


2017 ◽  
Vol 6 (2) ◽  
pp. 1700856 ◽  
Author(s):  
Yong-Biao Zhao ◽  
Grayson L. Ingram ◽  
Xi-Wen Gong ◽  
Xi-Yan Li ◽  
Li-Na Quan ◽  
...  

Micromachines ◽  
2018 ◽  
Vol 9 (12) ◽  
pp. 622 ◽  
Author(s):  
Wen-Yang Hsu ◽  
Yuan-Chi Lian ◽  
Pei-Yu Wu ◽  
Wei-Min Yong ◽  
Jinn-Kong Sheu ◽  
...  

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.


ACS Photonics ◽  
2014 ◽  
Vol 1 (5) ◽  
pp. 421-429 ◽  
Author(s):  
Liancheng Wang ◽  
Jun Ma ◽  
Zhiqiang Liu ◽  
Xiaoyan Yi ◽  
Hongwei Zhu ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.


2015 ◽  
Vol 3 (36) ◽  
pp. 9327-9336 ◽  
Author(s):  
R. L. Z. Hoye ◽  
K. P. Musselman ◽  
M. R. Chua ◽  
A. Sadhanala ◽  
R. D. Raninga ◽  
...  

Efficient and bright blue polyfluorene LEDs, processed entirely below 150 °C, are obtained using an atmospherically synthesized, tunable oxide electron-injector.


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