Air-Stable Room-Temperature Mid-Infrared Photodetectors Based on hBN/Black Arsenic Phosphorus/hBN Heterostructures

Nano Letters ◽  
2018 ◽  
Vol 18 (5) ◽  
pp. 3172-3179 ◽  
Author(s):  
Shaofan Yuan ◽  
Chenfei Shen ◽  
Bingchen Deng ◽  
Xiaolong Chen ◽  
Qiushi Guo ◽  
...  
2017 ◽  
Vol 3 (6) ◽  
pp. e1700589 ◽  
Author(s):  
Mingsheng Long ◽  
Anyuan Gao ◽  
Peng Wang ◽  
Hui Xia ◽  
Claudia Ott ◽  
...  

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .


Author(s):  
Guo-En Chang ◽  
Shui-Qing Yu ◽  
Jifeng Liu ◽  
Henry Cheng ◽  
Richard Soref ◽  
...  

1996 ◽  
Vol 32 (6) ◽  
pp. 560 ◽  
Author(s):  
J. Faist ◽  
F. Capasso ◽  
C. Sirtori ◽  
D.L. Sivco ◽  
A.L. Hutchinson ◽  
...  

2009 ◽  
Vol 52 (6) ◽  
pp. 220-223 ◽  
Author(s):  
Fabrizio Castellano ◽  
Rita C. Iotti ◽  
Fausto Rossi ◽  
Jerome Faist ◽  
Emmanuel Lhuillier ◽  
...  

2021 ◽  
Author(s):  
Vinod Sharma ◽  
Jinal Tapar ◽  
Saurabh Kishen ◽  
Naresh Kumar Emani

2013 ◽  
Vol 103 (18) ◽  
pp. 183513 ◽  
Author(s):  
Parthiban Santhanam ◽  
Duanni Huang ◽  
Rajeev J. Ram ◽  
Maxim A. Remennyi ◽  
Boris A. Matveev

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