Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands

The development of electrically pumped semiconductor diode lasers emitting at the ultraviolet (UV)-B and C spectral bands has been an active area of research over the past several years, motivated by a wide range of emerging applications. III-Nitride materials and their alloys, in particular AlGaN, are the material of choice for the development of this ultrashort-wavelength laser technology. Despite significant progress in AlGaN-based light-emitting diodes (LEDs), the technological advancement and innovation in diode lasers at these spectral bands is lagging due to several technical challenges. Here, the authors review the progress of AlGaN electrically-pumped lasers with respect to very recent achievements made by the scientific community. The devices based on both thin films and nanowires demonstrated to date will be discussed in this review. The state-of-the-art growth technologies, such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates used for the laser demonstrations will be highlighted. We will also outline technical challenges associated with the laser development, which must be overcome in order to achieve a critical technological breakthrough and fully realize the potential of these lasers.

Towards optimization of femtosecond laser pulse nanostructuring of targets for high-intensity laser experiments in vacuum

The interaction of intense femtosecond laser pulses with solid targets is a topic that has attracted a large amount of interest in science and applications. For many of the related experiments a large energy deposition or absorption as well as an efficient coupling to extreme ultraviolet (XUV), X-ray photon generation, and/or high energy particles is important. Here, much progress has been made in laser development and in experimental schemes, etc. However, regarding the improvement of the target itself, namely its geometry and surface, only limited improvements have been reported. The present paper investigates the formation of laser-induced periodic surface structures (LIPSS or ripples) on polished thick copper targets by femtosecond Ti:sapphire laser pulses. In particular, the dependence of the ripple period and ripple height has been investigated for different fluences and as a function of the number of laser shots on the same surface position. The experimental results and the formation of ripple mechanisms on metal surfaces in vacuum by femtosecond laser pulses have been analysed and the parameters of the experimentally observed “gratings” interpreted on base of theoretical models. The results have been specifically related to improve high-intensity femtosecond-laser matter interaction experiments with the goal of an enhanced particle emission (photons and high energy electrons and protons, respectively). In those experiments the presently investigated nanostructures could be generated easily in situ by multiple pre-pulses irradiated prior to a subsequent much more intense main laser pulse.

Strong field physics pursued with petawatt lasers

Recent ultra-short high-power lasers can provide ultra-high laser intensity over 1022 W/cm2. Laser fields of such extreme strengths instantaneously turn matter into plasma, which exhibits relativistic collective dynamics, thereby leading to unprecedented physical systems with potential breakthrough applications. In this article, we introduce the basic concepts and trace the progress in ultra-high intensity laser development and relativistic laser-plasma interactions, including laser-driven charged particle acceleration.

Effect of BaF2 Variation on Spectroscopic Properties of Tm3+ Doped Gallium Tellurite Glasses for Efficient 2.0 μm Laser

The effects of substitution of BaF2 for BaO on physical properties and 1. 8 μm emission have been systematically investigated to improve spectroscopic properties in Tm3+ doped gallium tellurite glasses for efficient 2.0 μm fiber laser. It is found that refractive index and density gradually decrease with increasing BaF2 content from 0 to 9 mol.%, due to the generation of more non-bridging oxygens. Furthermore, OH− absorption coefficient (αOH) reduces monotonically from 3.4 to 2.2 cm−1 and thus emission intensity near 1.8 μm in gallium tellurite glass with 9 mol.% BaF2 is 1.6 times as large as that without BaF2 while the lifetime becomes 1.7 times as long as the one without BaF2. Relative energy transfer mechanism is proposed. The maximum emission cross section and gain coefficient at around 1.8 μm of gallium tellurite glass containing 9 mol.% BaF2 are 8.8 × 10−21 cm2 and 3.3 cm−1, respectively. These results indicate that Tm3+ doped gallium tellurite glasses containing BaF2 appear to be an excellent host material for efficient 2.0 μm fiber laser development.

High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development

New fabrication methods are strongly demanded for the development of thin-film saturable absorbers with improved optical properties (absorption band, modulation depth, nonlinear optical response). In this sense, we investigate the performance of indium nitride (InN) epitaxial layers with low residual carrier concentration (<1018 cm−3), which results in improved performance at telecom wavelengths (1560 nm). These materials have demonstrated a huge modulation depth of 23% and a saturation fluence of 830 µJ/cm2, and a large saturable absorption around −3 × 104 cm/GW has been observed, attaining an enhanced, nonlinear change in transmittance. We have studied the use of such InN layers as semiconductor saturable absorber mirrors (SESAMs) for an erbium (Er)-doped fiber laser to perform mode-locking generation at 1560 nm. We demonstrate highly stable, ultrashort (134 fs) pulses with an energy of up to 5.6 nJ.