Unidirectional Spin–Orbit Interaction Induced by the Line Defect in Monolayer Transition Metal Dichalcogenides for High-Performance Devices

Nano Letters ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 6005-6012 ◽  
Author(s):  
Xiaoyin Li ◽  
Shunhong Zhang ◽  
Huaqing Huang ◽  
Lin Hu ◽  
Feng Liu ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Line Defect ◽  
Spin Orbit Interaction ◽  
Metal Dichalcogenides

scholarly journals Spin-orbit interaction induced in graphene by transition metal dichalcogenides

2019 ◽  
Vol 99 (24) ◽  
Author(s):  
T. Wakamura ◽  
F. Reale ◽  
P. Palczynski ◽  
M. Q. Zhao ◽  
A. T. C. Johnson ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Metal Dichalcogenides

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

scholarly journals High-performance flexible nanoscale transistors based on transition metal dichalcogenides

2021 ◽  
Author(s):  
Alwin Daus ◽  
Sam Vaziri ◽  
Victoria Chen ◽  
Çağıl Köroğlu ◽  
Ryan W. Grady ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Nanoscale Transistors

scholarly journals Polarity tuning of spin-orbit-induced spin splitting in two-dimensional transition metal dichalcogenides

2017 ◽  
Vol 122 (15) ◽  
pp. 153905 ◽  
Author(s):  
Moh. Adhib Ulil Absor ◽  
Iman Santoso ◽  
Harsojo ◽  
Kamsul Abraha ◽  
Hiroki Kotaka ◽  
...  
Keyword(s):  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Spin Splitting ◽  
Spin Orbit ◽  
Two Dimensional ◽  
Metal Dichalcogenides

scholarly journals Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Infrared Detector ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Electric Transport ◽  
Defect Engineering ◽  
Fast Switching ◽  
Metal Dichalcogenides ◽  
Poor Stability

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

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