Silicon Metasurfaces for Third Harmonic Geometric Phase Manipulation and Multiplexed Holography

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.

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Optimization Design on Power Filter of TCR Under Asymmetrical Voltage

The Open Electrical & Electronic Engineering Journal ◽

10.2174/1874129001509010591 ◽

2015 ◽

Vol 9 (1) ◽

pp. 591-599

Author(s):

Ma Wenchuan ◽

Zhitong Li ◽

Chen Daochang ◽

Qi Jiaming ◽

Zhou Qiang ◽

...

Keyword(s):

Optimization Design ◽

Reactive Power ◽

Estimation Method ◽

Reactive Power Compensation ◽

Harmonic Suppression ◽

Matlab Simulation ◽

Steel Mill ◽

Harmonic Current ◽

Third Harmonic ◽

Power Filter

For resolving the problem that power filter cannot work normally because TCR (thyristor controlled reactor) generates extra third harmonic current under asymmetrical voltage, the paper proposes the estimation method of current capacity that TCR generates extra third harmonic current under asymmetrical voltage. Considering extra third harmonic current under asymmetrical voltage, Optimum method based on genetic algorithm is used to design the parameters of power filter. With reactive power compensation and harmonic suppression project of a steel mill as example, the proposed method is simulated by Matlab. Simulation results show optimized power filter can eliminate extra third harmonic current effects under asymmetrical voltage, meet the requirement of reactive power compensation, reduce harmonics current that load injects into system, and guarantee the power filter safe operation under asymmetrical voltage.

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Ultrafast Third-Order Nonlinear Optical Response Excited by fs Laser Pulses at 1550 nm in GaN Crystals

Materials ◽

10.3390/ma14123194 ◽

2021 ◽

Vol 14 (12) ◽

pp. 3194

Author(s):

Adrian Petris ◽

Petronela Gheorghe ◽

Tudor Braniste ◽

Ion Tiginyanu

Keyword(s):

Harmonic Generation ◽

Nonlinear Optical ◽

Laser Pulses ◽

Third Harmonic Generation ◽

High Repetition Rate ◽

Third Order ◽

Third Harmonic ◽

The Third ◽

High Repetition ◽

Gan Crystal

The ultrafast third-order optical nonlinearity of c-plane GaN crystal, excited by ultrashort (fs) high-repetition-rate laser pulses at 1550 nm, wavelength important for optical communications, is investigated for the first time by optical third-harmonic generation in non-phase-matching conditions. As the thermo-optic effect that can arise in the sample by cumulative thermal effects induced by high-repetition-rate laser pulses cannot be responsible for the third-harmonic generation, the ultrafast nonlinear optical effect of solely electronic origin is the only one involved in this process. The third-order nonlinear optical susceptibility of GaN crystal responsible for the third-harmonic generation process, an important indicative parameter for the potential use of this material in ultrafast photonic functionalities, is determined.

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Ultraviolet wavefront manipulation using topological insulator metasurfaces based on geometric phase

Optics Communications ◽

10.1016/j.optcom.2021.126812 ◽

2021 ◽

Vol 487 ◽

pp. 126812

Author(s):

Mingli Wan ◽

Pengfei Ji ◽

Rongrong Wang ◽

Xiaopeng Zhang ◽

Mingli Tian ◽

...

Keyword(s):

Topological Insulator ◽

Geometric Phase

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GEOMETRIC PHASE AND DISENTANGLEMENT OF A MOVING FOUR-LEVEL ATOM IN THE PRESENCE OF NONLINEAR MEDIUM

International Journal of Quantum Information ◽

10.1142/s0219749912500074 ◽

2012 ◽

Vol 10 (01) ◽

pp. 1250007 ◽

Cited By ~ 3

Author(s):

NOUR ZIDAN ◽

S. ABDEL-KHALEK ◽

M. ABDEL-ATY

Keyword(s):

System Dynamics ◽

Geometric Phase ◽

Nonlinear Medium ◽

Atomic Motion ◽

Kerr Medium ◽

Mode Structure ◽

Field Mode ◽

Level Atom

In this paper, we investigate the geometric phase of the field interacting with a moving four-level atom in the presence of Kerr medium. The results show that the atomic motion, the field-mode structure and Kerr medium play important roles in the evolution of the system dynamics. As illustration, we examine the behavior of the geometric phase and entanglement with experimentally accessible parameters. Some new aspects are observed and discussed.

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