Transparent Ohmic Contact for CIGS Solar Cells Based on p-Type Aluminum Copper Sulfide Material Synthesized by Atomic Layer Deposition

2018 ◽  
Vol 1 (12) ◽  
pp. 7220-7229
Author(s):  
N. Schneider ◽  
L. Duclaux ◽  
M. Bouttemy ◽  
C. Bugot ◽  
F. Donsanti ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Ohmic Contact ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cigs Solar Cells ◽  
P Type

scholarly journals Effective module level encapsulation of CIGS solar cells with Al2O3 thin film grown by atomic layer deposition

2021 ◽  
Vol 222 ◽  
pp. 110914
Author(s):  
Shan-Ting Zhang ◽  
Maxim Guc ◽  
Oliver Salomon ◽  
Roland Wuerz ◽  
Victor Izquierdo-Roca ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cigs Solar Cells ◽  
Al2o3 Thin Film

Fabrication of Zn1-xMgxO Buffer Layers for CIGS Solar Cells by Atomic Layer Deposition Using Mg(CpEt)2 as a Mg Source

2019 ◽  
Vol 41 (4) ◽  
pp. 213-219 ◽  
Author(s):  
Chang-Soo Lee ◽  
Young Min Shin ◽  
Byung Tae Ahn
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Layer Deposition ◽  
Cigs Solar Cells

scholarly journals The Effect of ALD-Zn(O,S) Buffer Layer on the Performance of CIGSSe Thin Film Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 412
Author(s):  
Woo-Jin Choi ◽  
Wan Woo Park ◽  
Yangdo Kim ◽  
Chang Sik Son ◽  
Donghyun Hwang
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Good Control ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Glass Temperature ◽  
Layer Deposition ◽  
Pulse Ratio ◽  
First Results ◽  
Cigs Solar Cells

In this paper, we report the development of Cd-free buffers using atomic layer deposition (ALD) for Cu(In,Ga)(S,Se)2-based solar cells. The ALD process gives good control of thickness and the S/S +O ratio content of the films. The influence of the growth per cycle (GPC) and the S/(S+O) ratio, and the glass temperature of the atomic layer deposited Zn(O,S) buffer layers on the efficiency of the Cu(In,Ga)(S,Se)2 solar cells were investigated. We present the first results from our work on cadmium-free CIGS solar cells on substrates with an aperture area of 0.4 cm2. These Zn(O,S) layers were deposited by atomic layer deposition at 120 °C with S/Zn ratios of 0.7, and layers of around 30 nm. The Zn(O,S) 20% (Pulse Ratio: H2S/H2O+H2S) process results in a S/Zn ratio of 0.7. We achieved independently certified aperture area efficiencies of 17.1% for 0.4 cm2 cells.

(Invited) Characteristics of SnSx by Atomic Layer Deposition for CIGS Solar Cells

2013 ◽  
Vol 58 (10) ◽  
pp. 87-94 ◽  
Author(s):  
G. Ham ◽  
S. Shin ◽  
J. Park ◽  
H. Jeon
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cigs Solar Cells

scholarly journals Buffer Layer Point Contacts for CIGS Solar Cells Using Nanosphere Lithography and Atomic Layer Deposition

2017 ◽  
Vol 7 (1) ◽  
pp. 322-328 ◽  
Author(s):  
Adam Hultqvist ◽  
Takero Sone ◽  
Stacey F. Bent
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Nanosphere Lithography ◽  
Atomic Layer ◽  
Point Contacts ◽  
Layer Deposition ◽  
Cigs Solar Cells

Surface Passivation for Si Solar Cells: A Combination of Advanced Surface Cleaning and Thermal Atomic Layer Deposition of Al2O3

2012 ◽  
Vol 187 ◽  
pp. 357-361 ◽  
Author(s):  
Bart Vermang ◽  
Aude Rothschild ◽  
Karine Kenis ◽  
Kurt Wostyn ◽  
Twan Bearda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Surface Cleaning ◽  
Hydrophilic Surface ◽  
Hot Air ◽  
Si Solar Cells ◽  
Layer Deposition ◽  
P Type

Thermal atomic layer deposition (ALD) of Al2O3 provides an adequate level of surface passivation for both p-type and n-type Si solar cells. To obtain the most qualitative and uniform surface passivation advanced cleaning development is required. The studied pre-deposition treatments include an HF (Si-H) or oxidizing (Si-OH) last step and finish with simple hot-air drying or more sophisticated Marangoni drying. To examine the quality and uniformity of surface passivation - after cleaning and Al2O3 deposition - carrier density imaging (CDI) and quasi-steady-state photo-conductance (QSSPC) are applied. A hydrophilic surface clean that leads to improved surface passivation level is found. Si-H starting surfaces lead to equivalent passivation quality but worse passivation uniformity. The hydrophilic surface clean is preferred because it is thermodynamically stable, enables higher and more uniform ALD growth and consequently exhibits better surface passivation uniformity.

Improved Rear-Side Passivation by Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}/{\rm SiN}_{x}$ Stack Layers for High $V_{\rm OC}$ Industrial $p$-Type Silicon Solar Cells

2013 ◽  
Vol 34 (9) ◽  
pp. 1163-1165 ◽  
Author(s):  
Je-Wei Lin ◽  
Yi-Yang Chen ◽  
Jon-Yiew Gan ◽  
Wei-Ping Hseih ◽  
Chen-Hsu Du ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Layer Deposition ◽  
P Type

scholarly journals Atomic Layer Deposition of Ultrathin ZnO Films for Hybrid Window Layers for Cu(Inx,Ga1−x)Se2 Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2779
Author(s):  
Jaebaek Lee ◽  
Dong-Hwan Jeon ◽  
Dae-Kue Hwang ◽  
Kee-Jeong Yang ◽  
Jin-Kyu Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Short Circuit ◽  
Atomic Layer ◽  
Window Layer ◽  
Zno Films ◽  
Material Structure ◽  
Layer Deposition ◽  
Cigs Solar Cells

The efficiency of thin-film chalcogenide solar cells is dependent on their window layer thickness. However, the application of an ultrathin window layer is difficult because of the limited capability of the deposition process. This paper reports the use of atomic layer deposition (ALD) processes for fabrication of thin window layers for Cu(Inx,Ga1−x)Se2 (CIGS) thin-film solar cells, replacing conventional sputtering techniques. We fabricated a viable ultrathin 12 nm window layer on a CdS buffer layer from the uniform conformal coating provided by ALD. CIGS solar cells with an ALD ZnO window layer exhibited superior photovoltaic performances to those of cells with a sputtered intrinsic ZnO (i-ZnO) window layer. The short-circuit current of the former solar cells improved with the reduction in light loss caused by using a thinner ZnO window layer with a wider band gap. Ultrathin uniform A-ZnO window layers also proved more effective than sputtered i-ZnO layers at improving the open-circuit voltage of the CIGS solar cells, because of the additional buffering effect caused by their semiconducting nature. In addition, because of the precise control of the material structure provided by ALD, CIGS solar cells with A-ZnO window layers exhibited a narrow deviation of photovoltaic properties, advantageous for large-scale mass production purposes.

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