Improved Rear-Side Passivation by Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}/{\rm SiN}_{x}$ Stack Layers for High $V_{\rm OC}$ Industrial $p$-Type Silicon Solar Cells

2013 ◽  
Vol 34 (9) ◽  
pp. 1163-1165 ◽  
Author(s):  
Je-Wei Lin ◽  
Yi-Yang Chen ◽  
Jon-Yiew Gan ◽  
Wei-Ping Hseih ◽  
Chen-Hsu Du ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Layer Deposition ◽  
P Type

scholarly journals Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

2020 ◽  
Vol 217 (18) ◽  
pp. 2000348
Author(s):  
Kortan Öğütman ◽  
Nafis Iqbal ◽  
Geoffrey Gregory ◽  
Mengjie Li ◽  
Michael Haslinger ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Layer Deposition

scholarly journals Atomic Layer Deposition TiO2 Films and TiO2/SiNx Stacks Applied for Silicon Solar Cells

2016 ◽  
Vol 6 (8) ◽  
pp. 233 ◽  
Author(s):  
Zu-Po Yang ◽  
Hsyi-En Cheng ◽  
I-Hsuan Chang ◽  
Ing-Song Yu
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Tio2 Films ◽  
Layer Deposition

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Chemical Oxidation ◽  
Silicon Surfaces ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Wet Chemical ◽  
P Type

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

Transparent Ohmic Contact for CIGS Solar Cells Based on p-Type Aluminum Copper Sulfide Material Synthesized by Atomic Layer Deposition

2018 ◽  
Vol 1 (12) ◽  
pp. 7220-7229
Author(s):  
N. Schneider ◽  
L. Duclaux ◽  
M. Bouttemy ◽  
C. Bugot ◽  
F. Donsanti ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Ohmic Contact ◽  
Copper Sulfide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cigs Solar Cells ◽  
P Type

Influence of atomic layer deposition Al2O3nano-layer on the surface passivation of silicon solar cells

2014 ◽  
Vol 35 (5) ◽  
pp. 052002 ◽  
Author(s):  
Decheng Yang ◽  
Fang Lang ◽  
Zhuo Xu ◽  
Jinchao Shi ◽  
Gaofei Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Layer Deposition
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