Low Operating Voltage Organic Field-Effect Transistors with Gelatin as a Moisture-Induced Ionic Dielectric Layer: The Issues of High Carrier Mobility

2020 ◽  
Vol 12 (17) ◽  
pp. 19727-19736 ◽  
Author(s):  
Suman Mandal ◽  
Ajoy Mandal ◽  
Gourhari Jana ◽  
Samik Mallik ◽  
Satyajit Roy ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

High Carrier Mobility of Organic Field-Effect Transistors with a Thiophene–Naphthalene Mesomorphic Semiconductor

2007 ◽  
Vol 19 (14) ◽  
pp. 1864-1868 ◽  
Author(s):  
K. Oikawa ◽  
H. Monobe ◽  
K. Nakayama ◽  
T. Kimoto ◽  
K. Tsuchiya ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

Intrinsically stretchable isoindigo–bithiophene conjugated copolymers using poly(acrylate amide) side chains for organic field-effect transistors

2019 ◽  
Vol 10 (38) ◽  
pp. 5172-5183 ◽  
Author(s):  
Yan-Cheng Lin ◽  
Chien-Chung Shih ◽  
Yun-Chih Chiang ◽  
Chun-Kai Chen ◽  
Wen-Chang Chen
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Side Chains ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Conjugated Copolymers ◽  
Hydrogen Bonded

Intrinsically stretchable isoindigo–bithiophene conjugated copolymers for organic field-effect transistors with high carrier mobility were achieved using hydrogen-bonded poly(acrylate amide) side chains.

Novel dialkoxy-substituted benzodithienothiophenes for high-performance organic field-effect transistors

2015 ◽  
Vol 3 (41) ◽  
pp. 10892-10897 ◽  
Author(s):  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Zupan Mao ◽  
Man Shing Wong ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Side Chains ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

Angular-shaped benzodithieno[3,2-b]thiophene (BDTT) derivatives with two alkoxy side-chains were synthesized, and an OFET device based on BDTT-4 exhibited a high carrier mobility of up to 2.6 cm2V−1s−1.

scholarly journals High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

AIP Advances ◽  
2013 ◽  
Vol 3 (11) ◽  
pp. 112123 ◽  
Author(s):  
Murali Gedda ◽  
Nimmakayala V. V. Subbarao ◽  
Sk. Md. Obaidulla ◽  
Dipak K. Goswami
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Polarization-induced transport in ferroelelctric organic field-effect transistors

2019 ◽  
Author(s):  
◽  
Amrit Prasad Laudari
Keyword(s):  
Organic Semiconductors ◽  
Small Molecule ◽  
Dielectric Layer ◽  
Field Effect ◽  
Polyvinylidene Fluoride ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Sensing Applications ◽  
Organic Fets

In this research we study the role of ferroelectric dielectrics in organic field-effect transistors (FETs) to understand the mechanism of charge transport in organic semiconductors. The ferroelectric nature of the polymer, poly(vinylidene fluoride) (PVDF)), has been known for over 45 years. However, its role in interfacial transport in organic/polymeric FETs is not that well understood. PVDF and its copolymer, polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE), as a dielectric in organic FETs is a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. By choosing small molecule organic semiconductors -- pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) -- along with a copolymer PVDF-TrFE as the dielectric layer, the FET characteristics are monitored as a function of temperature. Pentacene FETs show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric, while an activated transport is observed with non-ferroelectric dielectrics. We show that this behavior is correlated with the nature of the trap states in TIPS-pentacene. We also developed the method of dipole engineering of the PVDF-TrFE films to enhance the properties of organic FETs. PVDF-TrFE, despite its applications in a vast range of work (including as a gate dielectric in organic FET and sensing applications) poses concerns such as higher conductivity compared to other polymer non-ferroelectric dielectrics. We have come up with new methods of electrical poling the dielectric layer to enhance FET performance as well as reduce gate leakage issues. We demonstrate the effect of polarization rotation in PVDF-TrFE on the performance of small-molecule-based organic FETs. The subthreshold swing and other transistor parameters in organic FETs can be controlled in a reversible fashion by switching the polarization direction in the PVDF-TrFE layer. We further demonstrate a novel method of selective poling of the dielectric layer. By using solution processed TIPS-pentacene as the organic semiconductor, it is shown that textured poling of the PVDF-TrFE layer dramatically improves FET properties compared to unpoled or uniformly poled ferroelectric films. The texturing is achieved by first vertically poling the PVDF-TrFE film and then laterally poling the dielectric layer close to the gate electrode. TIPS-pentacene FETs show on/off ratios of 105 and hole mobilities of 1 cm2/Vs under ambient conditions with operating voltages well below-4 V. This research opens prospects of achieving low-operating FETs without any expensive patterning techniques.

High carrier mobility in suspended-channel graphene field effect transistors

2013 ◽  
Vol 103 (19) ◽  
pp. 193102 ◽  
Author(s):  
Hongming Lv ◽  
Huaqiang Wu ◽  
Jinbiao Liu ◽  
Jiahan Yu ◽  
Jiebin Niu ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

Low operating voltage and low bias stress in top-contact SnCl2Pc/CuPc heterostructure-based bilayer ambipolar organic field-effect transistors

2015 ◽  
Vol 3 (27) ◽  
pp. 7118-7127 ◽  
Author(s):  
Sk. Md. Obaidulla ◽  
P. K. Giri
Keyword(s):  
Small Molecules ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Operating Voltage ◽  
Organic Field Effect Transistors ◽  
Bias Stress ◽  
Effect Transistor ◽  
Top Contact

A low operating voltage (∼10 V) top contact-bottom gate ambipolar organic field-effect transistor (OFET) is fabricated using vacuum-deposited small molecules, SnCl2Pc and CuPc. The ambipolar OFET exhibits balanced carrier mobility and low bias-stress (characteristics time constant ∼105 s) for both n-channel and p-channels.

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