Low operating voltage and low bias stress in top-contact SnCl2Pc/CuPc heterostructure-based bilayer ambipolar organic field-effect transistors

2015 ◽  
Vol 3 (27) ◽  
pp. 7118-7127 ◽  
Author(s):  
Sk. Md. Obaidulla ◽  
P. K. Giri

A low operating voltage (∼10 V) top contact-bottom gate ambipolar organic field-effect transistor (OFET) is fabricated using vacuum-deposited small molecules, SnCl2Pc and CuPc. The ambipolar OFET exhibits balanced carrier mobility and low bias-stress (characteristics time constant ∼105 s) for both n-channel and p-channels.

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...


2007 ◽  
Vol 1017 ◽  
Author(s):  
Werner Prost ◽  
Kai Blekker ◽  
Quoc-Thai Do ◽  
Ingo Regolin ◽  
Sven Müller ◽  
...  

AbstractWe report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel MISFET device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to µ = 13,000 cm2/Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm2/Vs.


2013 ◽  
Vol 25 (2) ◽  
pp. 194-199 ◽  
Author(s):  
Md. Minarul Islam

Organic field effect transistors with an active layer based on the tetracene single-crystal were fabricated. It was found that organosilane self-assemble monolayer (SAM) modified device with tetracene single-crystals gave higher mobility and on/off ratio rather than untreated device. SAM modified tetracene single-crystal transistors with parylene gate insulator showed the highest mobility of 0.66 cm2 V-1 s-1 and high on/off ratio of ~104. This finding demonstrates that SAM treatment decrease the charge leakage between source and drain which help to decrease the off current with greater extent and increase the on current slightly of the tetracene single-crystal field-effect transistors. Journal of Bangladesh Chemical Society, Vol. 25(2), 194-199, 2012 DOI: http://dx.doi.org/10.3329/jbcs.v25i2.15086


2015 ◽  
Vol 3 (23) ◽  
pp. 5951-5957 ◽  
Author(s):  
Yu Jung Park ◽  
Jung Hwa Seo ◽  
Walaa Elsawy ◽  
Bright Walker ◽  
Shinuk Cho ◽  
...  

We have investigated the field-effect transistor characteristics of a series of isoindigo based donor–acceptor–donor small molecules via solvent additives.


Molecules ◽  
2020 ◽  
Vol 25 (3) ◽  
pp. 680 ◽  
Author(s):  
Cao-An Vu ◽  
Wen-Yih Chen

Aptamers, in sensing technology, are famous for their role as receptors in versatile applications due to their high specificity and selectivity to a wide range of targets including proteins, small molecules, oligonucleotides, metal ions, viruses, and cells. The outburst of field-effect transistors provides a label-free detection and ultra-sensitive technique with significantly improved results in terms of detection of substances. However, their combination in this field is challenged by several factors. Recent advances in the discovery of aptamers and studies of Field-Effect Transistor (FET) aptasensors overcome these limitations and potentially expand the dominance of aptamers in the biosensor market.


2018 ◽  
Vol 6 (4) ◽  
pp. 799-807 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jin Jeong ◽  
Jaemin Jung ◽  
Se Hyun Kim ◽  
Jinho Ahn ◽  
...  

High-crystalline TIPS-PEN crystal stripes are directly printed with controllable inter-stripe spacingviaprogrammed dip-coating for application in organic field-effect transistors.


Author(s):  
Yue Xi ◽  
Tao Wang ◽  
Qi Mu ◽  
Congcong Huang ◽  
Shuming Duan ◽  
...  

Organic field-effect transistor (OFET) is one of the promising candidates for next generation electronics due to its solution processability and good performance superior to amorphous Si devices. Patterning the organic...


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