Low operating voltage and low bias stress in top-contact SnCl2Pc/CuPc heterostructure-based bilayer ambipolar organic field-effect transistors
2015 ◽
Vol 3
(27)
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pp. 7118-7127
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Keyword(s):
A low operating voltage (∼10 V) top contact-bottom gate ambipolar organic field-effect transistor (OFET) is fabricated using vacuum-deposited small molecules, SnCl2Pc and CuPc. The ambipolar OFET exhibits balanced carrier mobility and low bias-stress (characteristics time constant ∼105 s) for both n-channel and p-channels.
Keyword(s):
2013 ◽
Vol 25
(2)
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pp. 194-199
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2015 ◽
Vol 3
(23)
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pp. 5951-5957
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Keyword(s):
2018 ◽
Vol 6
(4)
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pp. 799-807
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2020 ◽
Vol 12
(17)
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pp. 19727-19736
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