Copper Thiocyanate as an Anode Interfacial Layer for Efficient Near-Infrared Organic Photodetector

Author(s):  
Zhenqiang Huang ◽  
Zhiming Zhong ◽  
Feng Peng ◽  
Lei Ying ◽  
Gang Yu ◽  
...  
2010 ◽  
Vol 126-128 ◽  
pp. 935-939 ◽  
Author(s):  
Min Hu ◽  
Ying Liu

A series of Ti/TiN multilayer films were prepared by reactive DC magnetron sputtering onto Si(111) substrates. The resistivity and optical reflectance of these thin films were measured as a function of the modulated, multilayered thickness and the number of layered structures. The resistivity decreased with increase in the number of layers in the film up to 4 layers. The reflectance in the near infrared region increased with increase in layer thickness but after a certain thickness, the change in reflectance was minimal. An optimum thickness of 25 nm for the modulated film realized a maximum of 0.829 in the near infrared reflectance. With the number of layers greater than 15, an interfacial layer of Ti2N was observed.


2018 ◽  
Vol 10 (30) ◽  
pp. 25614-25620 ◽  
Author(s):  
Min-Soo Choi ◽  
Sangmin Chae ◽  
Hyo Jung Kim ◽  
Jang-Joo Kim

2016 ◽  
Vol 4 (24) ◽  
pp. 5584-5592 ◽  
Author(s):  
Xiaolong Li ◽  
Shirong Wang ◽  
Yin Xiao ◽  
Xianggao Li

An ultrasensitive near-infrared organic photodetector with an EQE of 354 200% and a photoresponsivity of 2227 A W−1 has been fabricated by dip-coating.


2019 ◽  
Vol 32 (1) ◽  
pp. 1906027 ◽  
Author(s):  
Jianfei Huang ◽  
Jaewon Lee ◽  
Joachim Vollbrecht ◽  
Viktor V. Brus ◽  
Alana L. Dixon ◽  
...  

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Hui Zhang ◽  
Sandra Jenatsch ◽  
Jelissa De Jonghe ◽  
Frank Nüesch ◽  
Roland Steim ◽  
...  

Nanophotonics ◽  
2021 ◽  
Vol 10 (5) ◽  
pp. 1573-1579
Author(s):  
Cihyun Kim ◽  
Tae Jin Yoo ◽  
Kyoung Eun Chang ◽  
Min Gyu Kwon ◽  
Hyeon Jun Hwang ◽  
...  

Abstract The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 × 1010 cm ⋅ Hz1/2W−1. The responsivity is improved to 1.2 AW−1 with an interfacial layer from 0.5 AW−1 of the reference devices. The normalized photo-to-dark current ratio is improved to 4.3 × 107 W−1 at a wavelength of 1550 nm, which is 10–100 times higher than those of other Ge photodetectors.


2020 ◽  
Vol 124 (39) ◽  
pp. 21730-21739 ◽  
Author(s):  
Guruprasad M. Somashekharappa ◽  
Chinju Govind ◽  
Vijith Pulikodan ◽  
Megha Paul ◽  
Manoj A. G. Namboothiry ◽  
...  

2015 ◽  
Vol 3 (19) ◽  
pp. 5073-5077 ◽  
Author(s):  
Wenlian Peng ◽  
Yuchen Liu ◽  
Chuanxi Wang ◽  
Rong Hu ◽  
Jianping Zhang ◽  
...  

A new single-layered organic photodetector was prepared, which exhibited a high photomultiplication gain of 356 at 830 nm.


Sign in / Sign up

Export Citation Format

Share Document