Transfer-Printed PEDOT:PSS Electrodes Using Mild Acids for High Conductivity and Improved Stability with Application to Flexible Organic Solar Cells

2016 ◽  
Vol 8 (22) ◽  
pp. 14029-14036 ◽  
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Xi Fan ◽  
Bingang Xu ◽  
Shenghua Liu ◽  
Chaohua Cui ◽  
Jinzhao Wang ◽  
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2014 ◽  
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Mike Hambsch ◽  
Hui Jin ◽  
Andrew J. Clulow ◽  
Andrew Nelson ◽  
Norifumi L. Yamada ◽  
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2015 ◽  
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Kihyon Hong ◽  
Juyoung Ham ◽  
Byoung-Joon Kim ◽  
Jae Yong Park ◽  
Dong Chan Lim ◽  
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2017 ◽  
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Ji Hoon Seo ◽  
Inchan Hwang ◽  
Han-Don Um ◽  
Sojeong Lee ◽  
Kangmin Lee ◽  
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2019 ◽  
Vol 31 (36) ◽  
pp. 1902447 ◽  
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Ki‐Won Seo ◽  
Jaemin Lee ◽  
Jihwan Jo ◽  
Changsoon Cho ◽  
Jung‐Yong Lee

2020 ◽  
Vol 36 (3) ◽  
pp. 343-350
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Yuheng Wang ◽  
Yilin Chang ◽  
Jianqi Zhang ◽  
Guanghao Lu ◽  
Zhixiang Wei

2009 ◽  
Vol 1154 ◽  
Author(s):  
Hideyuki Murata ◽  
Yoshiki Kinoshita ◽  
Yoshihiro Kanai ◽  
Toshinori Matsushima ◽  
Yuya Ishii

AbstractWe report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.


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