Coffee-Ring-Free Quantum Dot Thin Film Using Inkjet Printing from a Mixed-Solvent System on Modified ZnO Transport Layer for Light-Emitting Devices

2016 ◽  
Vol 8 (39) ◽  
pp. 26162-26168 ◽  
Author(s):  
Congbiao Jiang ◽  
Zhiming Zhong ◽  
Baiquan Liu ◽  
Zhiwei He ◽  
Jianhua Zou ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Inkjet Printing ◽  
Mixed Solvent ◽  
Solvent System ◽  
Transport Layer ◽  
Mixed Solvent System ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Coffee Ring

High-brightness perovskite quantum dot light-emitting devices using inkjet printing

2021 ◽  
Vol 93 ◽  
pp. 106168
Author(s):  
Chunbo Zheng ◽  
Xin Zheng ◽  
Chen Feng ◽  
Songman Ju ◽  
Zhongwei Xu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Inkjet Printing ◽  
High Brightness ◽  
Light Emitting ◽  
Light Emitting Devices

The Effect of Particle Size on the Charge Balance Property of Quantum Dot Light-Emitting Devices Using Zinc Oxide Nanoparticles

2021 ◽  
Vol 21 (7) ◽  
pp. 3795-3799
Author(s):  
Mi-Young Ha ◽  
Chang Kyo Kim ◽  
Dae-Gyu Moon
Keyword(s):  
Particle Size ◽  
Zinc Oxide ◽  
Quantum Dot ◽  
Zinc Oxide Nanoparticles ◽  
Transport Layer ◽  
Oxide Nanoparticles ◽  
Zno Nps ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Maximum Current

Zinc oxide nanoparticles (ZnO NPs) have been widely used as an inorganic electron transport layer (ETL) in quantum dot light-emitting devices (QLEDs) due to their excellent electrical properties. Here, we report the effect of ZnO NPs inorganic ETL of different particle sizes on the electrical and optical properties of QLEDs. We synthesized ZnO NPs into the size of 3 nm and 8 nm respectively and used them as an inorganic ETL of QLEDs. The particle size and crystal structure of the synthesized ZnO NPs were verified by Transmission electron microscopy (TEM) analysis and X-ray pattern analysis. The device with 8 nm ZnO NPs ETL exhibited higher efficiency than the 3 nm ZnO NPs ETL device in the single hole transport layer (HTL) QLEDs. The maximum current efficiency of 19.0 cd/A was achieved in the device with 8 nm ZnO NPs layer. We obtained the maximum current efficiency of 17.5 cd/A in 3 nm ZnO NPs device by optimizing bilayer HTL and ZnO NPs ETL.

Thin Film Morphology Control via a Mixed Solvent System for High-Performance Organic Thin Film Transistors

2013 ◽  
Vol 5 (9) ◽  
pp. 1323-1327 ◽  
Author(s):  
Tae Kyu An ◽  
So-Min Park ◽  
Sooji Nam ◽  
Jaeyeong Hwang ◽  
Seung-Jin Yoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Mixed Solvent ◽  
Morphology Control ◽  
Solvent System ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Mixed Solvent System

Inkjet Printing Matrix Perovskite Quantum Dot Light‐Emitting Devices

2020 ◽  
Vol 5 (6) ◽  
pp. 2000099 ◽  
Author(s):  
Danyang Li ◽  
Junjie Wang ◽  
Miaozi Li ◽  
Gancheng Xie ◽  
Biao Guo ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Inkjet Printing ◽  
Light Emitting ◽  
Light Emitting Devices

scholarly journals Significant Enhancement in Quantum-dot Light Emitting Device Stability via a ZnO:Polyethylenimine Mixture in the Electron Transport Layer

2021 ◽  
Author(s):  
Dong Seob Chung ◽  
Tyler Davidson-Hall ◽  
Hyeoghwa Yu ◽  
Fatemeh Samaeifar ◽  
Peter Chun ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Significant Enhancement ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Device Stability

The effect of adding polyethylenimine (PEI) into the ZnO electron transport layer (ETL) of inverted quantum dot (QD) light emitting devices (QDLEDs) to form a blended ZnO:PEI ETL instead of...

scholarly journals Correction: Optimization of the electron transport layer in quantum dot light-emitting devices

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Gary Zaiats ◽  
Shingo Ikeda ◽  
Prashant V. Kamat
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

CdSe/ZnS Quantum Dot Thin Film Formation by an Electrospray Deposition Process for Light-Emitting Devices

Small ◽  
2014 ◽  
pp. n/a-n/a ◽  
Author(s):  
My Duyen Ho ◽  
Namhun Kim ◽  
Daekyoung Kim ◽  
Sung Min Cho ◽  
Heeyeop Chae
Keyword(s):  
Thin Film ◽  
Quantum Dot ◽  
Film Formation ◽  
Deposition Process ◽  
Electrospray Deposition ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Thin Film Formation

scholarly journals Optimization of the electron transport layer in quantum dot light-emitting devices

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Gary Zaiats ◽  
Shingo Ikeda ◽  
Prashant V. Kamat
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Hole Transport ◽  
Charge Carriers ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Mobility Of Charge Carriers

AbstractQuantum dot light-emitting devices have emerged as an important technology for display applications. Their emission is a result of recombination between positive and negative charge carriers that are transported through the hole and electron conductive layers, respectively. The selection of electron or hole transport materials in these devices not only demands the alignment of energy levels between the layers but also balances the flow of electrons and holes toward the recombination sites. In this work, we examine a method for device optimization through control of the charge carrier kinetics. We employ impedance spectroscopy to examine the mobility of charge carriers through each of the layers. The derived mobility values provide a path to estimate the transition time of each charge carrier toward the emitting layer. We suggest that an optimal device structure can be obtained when the transition times of both charge carriers toward the active layer are similar. Finally, we examine our hypothesis by focusing on thickness optimization of the electron transport layer.

All inorganic quantum dot light emitting devices with solution processed metal oxide transport layers

MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 305-310 ◽  
Author(s):  
R. Vasan ◽  
H. Salman ◽  
M. O. Manasreh
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices

ABSTRACTAll inorganic quantum dot light emitting devices with solution processed transport layers are investigated. The device consists of an anode, a hole transport layer, a quantum dot emissive layer, an electron transport layer and a cathode. Indium tin oxide coated glass slides are used as substrates with the indium tin oxide acting as the transparent anode electrode. The transport layers are both inorganic, which are relatively insensitive to moisture and other environmental factors as compared to their organic counterparts. Nickel oxide acts as the hole transport layer, while zinc oxide nanocrystals act as the electron transport layer. The nickel oxide hole transport layer is formed by annealing a spin coated layer of nickel hydroxide sol-gel. On top of the hole transport layer, CdSe/ZnS quantum dots synthesized by hot injection method is spin coated. Finally, zinc oxide nanocrystals, dispersed in methanol, are spin coated over the quantum dot emissive layer as the electron transport layer. The material characterization of different layers is performed by using absorbance, Raman scattering, XRD, and photoluminescence measurements. The completed device performance is evaluated by measuring the IV characteristics, electroluminescence and quantum efficiency measurements. The device turn on is around 4V with a maximum current density of ∼200 mA/cm2 at 9 V.

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