Shell Thickness Engineering Significantly Boosts the Photocatalytic H2 Evolution Efficiency of CdS/CdSe Core/Shell Quantum Dots

2017 ◽  
Vol 9 (41) ◽  
pp. 35712-35720 ◽  
Author(s):  
Ping Wang ◽  
Minmin Wang ◽  
Jie Zhang ◽  
Chuanping Li ◽  
Xiaolong Xu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Shell Thickness ◽  
Core Shell ◽  
H2 Evolution ◽  
Cdse Core ◽  
Photocatalytic H2 Evolution

Construction of CdS/CoOx core-shell nanorods for efficient photocatalytic H2 evolution

2018 ◽  
Vol 234 ◽  
pp. 109-116 ◽  
Author(s):  
Ye Liu ◽  
Shuoping Ding ◽  
Yiqiu Shi ◽  
Xiufan Liu ◽  
Zuozuo Wu ◽  
...  
Keyword(s):  
Core Shell ◽  
H2 Evolution ◽  
Photocatalytic H2 Evolution

Resistive Switching in CdTe/CdSe Core–Shell Quantum Dots Embedded Chitosan-Based Memory Devices

2021 ◽  
Author(s):  
Zolile Wiseman Dlamini ◽  
Sreedevi Vallabhapurapu ◽  
Olamide Abiodun Daramola ◽  
Potlaki Foster Tseki ◽  
Rui Werner Macedo Krause ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resistive Switching ◽  
Core Shell ◽  
Cdse Core ◽  
Active Layers ◽  
Ag Electrodes ◽  
Exponential Decrease ◽  
Conductive Bridge ◽  
Bipolar Memory ◽  
State Resistance

In this paper, we report on the resistive switching (RS) and conduction mechanisms in devices consisting of CdTe/CdSe core–shell quantum dots embedded chitosan composites active layer. Two devices with active layers sandwiched between (1) Al and Ag, and (2) ITO and Ag electrodes were studied. Both devices exhibited bipolar memory behavior with [Formula: see text] V and [Formula: see text][Formula: see text]V, for the Al-based device, while [Formula: see text] V and [Formula: see text][Formula: see text]V were observed for the ITO-based device, enabling both devices to be operated at low powers. However, the switching mechanisms of both devices were different, i.e., RS in Al device was attributed to conductive bridge mechanism, while space-charge-limited driven conduction filament attributed the switching mechanism of the ITO device. Additionally, the Al-based device showed long retention ([Formula: see text][Formula: see text]s) and a reasonable large ([Formula: see text]) ON/OFF ratio. Additionally, for this device, we also observed sweeping cycle-induced reversal of voltage polarity of the [Formula: see text] and [Formula: see text]. In contrast, we observed that increasing sweeping cycles resulted in an exponential decrease of the OFF-state resistance of the ITO-based device.

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