scholarly journals Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal

2018 ◽  
Vol 10 (6) ◽  
pp. 5626-5632 ◽  
Author(s):  
Daniel M. Balazs ◽  
Nisrina Rizkia ◽  
Hong-Hua Fang ◽  
Dmitry N. Dirin ◽  
Jamo Momand ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Step ◽  
Colloidal Quantum Dot

scholarly journals Quantum dot field effect transistors

2013 ◽  
Vol 16 (9) ◽  
pp. 312-325 ◽  
Author(s):  
Frederik Hetsch ◽  
Ni Zhao ◽  
Stephen V. Kershaw ◽  
Andrey L. Rogach
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

ACS Nano ◽  
2018 ◽  
Vol 12 (5) ◽  
pp. 4624-4629 ◽  
Author(s):  
Penghui He ◽  
Congbiao Jiang ◽  
Linfeng Lan ◽  
Sheng Sun ◽  
Yizhi Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Indium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Solution Processed ◽  
Light Emitting

Single-step, large-area, variable thickness sputtered WS2 film-based field effect transistors

2020 ◽  
Vol 46 (17) ◽  
pp. 26854-26860
Author(s):  
Merve Acar ◽  
Soheil Mobtakeri ◽  
Hasan Efeoğlu ◽  
Mehmet Ertuğrul ◽  
Emre Gür
Keyword(s):  
Variable Thickness ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Step ◽  
Large Area

Simulation of Stacked Quantum Dot Channels SWS-FET Using Multi-FET ABM Modeling

2019 ◽  
Vol 28 (03n04) ◽  
pp. 1940025
Author(s):  
H. Salama ◽  
B. Saman ◽  
R. H. Gudlavalleti ◽  
P-Y. Chan ◽  
R. Mays ◽  
...  
Keyword(s):  
Experimental Data ◽  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Simulation Models ◽  
Logic Gates ◽  
Behavior Model ◽  
Analog Behavior

This paper presents simulation of spatial wavefunction switched (SWS) field-effect transistors (FETs) comprising of two vertically stacked quantum dot channels. An analog behavior model (ABM) was used to compare the experimental I-V characteristics of a fabricated QD-SWS-FET. Each channel consists of two quantum dot layers and are connected to the dedicated drains D2 and D1, respectively. The fabricated SWS-FET has one source and one gate. The ABM simulation models SWS-FET comprising of two independent conventional BSIM FETs with their (W/L) ratios, capacitances and other device parameters. The agreement in simulation and experimental data will advance modeling of SWS based adders, logic gates and SRAMs.

scholarly journals Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

ACS Nano ◽  
2020 ◽  
Vol 14 (5) ◽  
pp. 5754-5762 ◽  
Author(s):  
Maria El Abbassi ◽  
Mickael L. Perrin ◽  
Gabriela Borin Barin ◽  
Sara Sangtarash ◽  
Jan Overbeck ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon

Cesium Lead Bromide Quantum Dot Light-Emitting Field-Effect Transistors

2020 ◽  
Vol 12 (19) ◽  
pp. 21944-21951
Author(s):  
Dae-Kyu Kim ◽  
Dongsun Choi ◽  
Mihyeon Park ◽  
Kwang Seob Jeong ◽  
Jong-Ho Choi
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Lead Bromide

Gate-Dependent Carrier Diffusion Length in Lead Selenide Quantum Dot Field-Effect Transistors

Nano Letters ◽  
2013 ◽  
Vol 13 (8) ◽  
pp. 3463-3469 ◽  
Author(s):  
Tyler Otto ◽  
Chris Miller ◽  
Jason Tolentino ◽  
Yao Liu ◽  
Matt Law ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Diffusion Length ◽  
Field Effect Transistors ◽  
Lead Selenide ◽  
Carrier Diffusion

scholarly journals A tunable colloidal quantum dot photo field-effect transistor

2011 ◽  
Vol 99 (10) ◽  
pp. 101102 ◽  
Author(s):  
Subir Ghosh ◽  
Sjoerd Hoogland ◽  
Vlad Sukhovatkin ◽  
Larissa Levina ◽  
Edward H. Sargent
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Colloidal Quantum Dot ◽  
Effect Transistor

Photojunction Field-Effect Transistor Based on a Colloidal Quantum Dot Absorber Channel Layer

ACS Nano ◽  
2015 ◽  
Vol 9 (1) ◽  
pp. 356-362 ◽  
Author(s):  
Valerio Adinolfi ◽  
Illan J. Kramer ◽  
André J. Labelle ◽  
Brandon R. Sutherland ◽  
S. Hoogland ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Layer ◽  
Colloidal Quantum Dot ◽  
Effect Transistor
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