Enhancing Photovoltaic Performance of Inverted Planar Perovskite Solar Cells by Cobalt-Doped Nickel Oxide Hole Transport Layer

2018 ◽  
Vol 10 (16) ◽  
pp. 14153-14159 ◽  
Author(s):  
Yulin Xie ◽  
Kai Lu ◽  
Jiashun Duan ◽  
Youyu Jiang ◽  
Lin Hu ◽  
...  
Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 978
Author(s):  
Chaoqun Lu ◽  
Weijia Zhang ◽  
Zhaoyi Jiang ◽  
Yulong Zhang ◽  
Cong Ni

The hole transport layer (HTL) is one of the main factors affecting the efficiency and stability of perovskite solar cells (PSCs). However, obtaining HTLs with the desired properties through current preparation techniques remains a challenge. In the present study, we propose a new method which can be used to achieve a double-layer HTL, by inserting a CuI layer between the perovskite layer and Spiro-OMeTAD layer via a solution spin coating process. The CuI layer deposited on the surface of the perovskite film directly covers the rough perovskite surface, covering the surface defects of the perovskite, while a layer of CuI film avoids the defects caused by Spiro-OMetad pinholes. The double-layer HTLs improve roughness and reduce charge recombination of the Spiro-OMeTAD layer, thereby resulting in superior hole extraction capabilities and faster hole mobility. The CuI/Spiro-OMeTAD double-layer HTLs-based devices were prepared in N2 gloveboxes and obtained an optimized PCE (photoelectric conversion efficiency) of 17.44%. Furthermore, their stability was improved due to the barrier effect of the inorganic CuI layer on the entry of air and moisture into the perovskite layer. The results demonstrate that another deposited CuI film is a promising method for realizing high-performance and air-stable PSCs.


2017 ◽  
Vol 5 (39) ◽  
pp. 10280-10287 ◽  
Author(s):  
Cong Chen ◽  
Guang Yang ◽  
Junjie Ma ◽  
Xiaolu Zheng ◽  
Zhiliang Chen ◽  
...  

We showed that perovskite solar cells employing Li-treated NiOxas a hole transport layer demonstrated excellent photovoltaic performance, and obtained a power conversion efficiency of up to 18.03%. In addition, the device possessed good long-term stability.


Nanoscale ◽  
2017 ◽  
Vol 9 (12) ◽  
pp. 4236-4243 ◽  
Author(s):  
Di Huang ◽  
Tenghooi Goh ◽  
Jaemin Kong ◽  
Yifan Zheng ◽  
Suling Zhao ◽  
...  

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1269 ◽  
Author(s):  
Wu ◽  
Thakur ◽  
Chiang ◽  
Chandel ◽  
Wang ◽  
...  

The power conversion efficiency (PCE) of single-junction solar cells was theoretically predicted to be limited by the Shockley–Queisser limit due to the intrinsic potential loss of the photo-excited electrons in the light absorbing materials. Up to now, the optimized GaAs solar cell has the highest PCE of 29.1%, which is close to the theoretical limit of ~33%. To pursue the perfect photovoltaic performance, it is necessary to extend the lifetimes of the photo-excited carriers (hot electrons and hot holes) and to collect the hot carriers without potential loss. Thanks to the long-lived hot carriers in perovskite crystal materials, it is possible to completely convert the photon energy to electrical power when the hot electrons and hot holes can freely transport in the quantized energy levels of the electron transport layer and hole transport layer, respectively. In order to achieve the ideal PCE, the interactions between photo-excited carriers and phonons in perovskite solar cells has to be completely understood.


2019 ◽  
Vol 12 (01) ◽  
pp. 1850088 ◽  
Author(s):  
Weina Zhang ◽  
Jie Tang ◽  
Jihuai Wu ◽  
Zhang Lan

Due to the rough surface of fluorine-doped tin oxide (FTO) conductive glasses, it is challenging to fabricate fully covered ultra-thin hole-transport layer (HTL) with thickness under 100[Formula: see text]nm by a simple solution-processed method. Yet, the quality of HTLs play a key role in determining photovoltaic performance of the inverted planar perovskite solar cells (PSCs) owing to their important functions for effectively extracting holes, blocking electrons, suppressing dark reaction, and so on. Here, we report a facile nickel-containing organic sol (Ni–Sol) route to fabricate fully covered 46[Formula: see text]nm thick NiO HTLs for efficient inverted planar PSCs. Comparing with the pre-synthesized NiO nanocrystals solution, the Ni–Sol is easier to spread around the rough outline of FTO to achieve higher surface coverage. Through optimizing the concentration of nickel-containing organic sol, the champion performance of the inverted planar PSCs can be achieved because of the high transparency and good hole-transport dynamics of the optimized NiO film. This work demonstrates the advanced Ni–Sol route for preparing efficient inverted planar PSCs by the simple solution-processed method.


Author(s):  
Ersan Y. Muslih ◽  
Md. Shahiduzzaman ◽  
Md. Akhtaruzzaman ◽  
Mohammad Ismail Hossain ◽  
LiangLe Wang ◽  
...  

Abstract Nickel oxide (NiOx) hole transport layer was made from nickel oxide powder by a simple process and non-stabilizer or chelating agent. We used ethanol as main solvent and nitric acid less than 2% as co-solvent. The formation reaction mechanism of NiOx thin film was also studied. Perovskite solar cells (PSCs) with the optimum thickness of 70 nm exhibited power conversion efficiency as high as 12.99%, which is superior to those of PSCs with their counterparts. The moisture stability of NiOx based device (non-encapsulated) remained above 70% of their initial output after 700h storage at ambient conditions.


2019 ◽  
Vol 7 (24) ◽  
pp. 7288-7298 ◽  
Author(s):  
Ju Ho Lee ◽  
Young Wook Noh ◽  
In Su Jin ◽  
Sang Hyun Park ◽  
Jae Woong Jung

Current–voltage hysteresis is a critical issue that impacts the photovoltaic performance of perovskite solar cells, and thus, it is imperative to develop high-efficiency perovskite solar cells without hysteresis behavior.


Nanoscale ◽  
2018 ◽  
Vol 10 (12) ◽  
pp. 5617-5625 ◽  
Author(s):  
Jiankai Zhang ◽  
Hui Luo ◽  
Weijia Xie ◽  
Xuanhuai Lin ◽  
Xian Hou ◽  
...  

A ferrocenedicarboxylic acid modified NiOx layer greatly improves the crystallization of a perovskite, its interface contact properties and electrical conductivity and also passivates the interface.


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