Efficient Gate Modulation in a Screening-Engineered MoS2/Single-Walled Carbon Nanotube Network Heterojunction Vertical Field-Effect Transistor

2019 ◽  
Vol 11 (28) ◽  
pp. 25516-25523 ◽  
Author(s):  
Thanh Luan Phan ◽  
Quoc An Vu ◽  
Young Rae Kim ◽  
Yong Seon Shin ◽  
Il Min Lee ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Vertical Field ◽  
Carbon Nanotube Network ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor

Anomalous Carrier Transport in Ambipolar Field-Effect Transistor of Large Diameter Single-Walled Carbon Nanotube Network

2015 ◽  
Vol 2 (2) ◽  
pp. 1500222 ◽  
Author(s):  
Satria Zulkarnaen Bisri ◽  
Vladimir Derenskyi ◽  
Widianta Gomulya ◽  
Jorge Mario Salazar-Rios ◽  
Martin Fritsch ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Carrier Transport ◽  
Field Effect Transistor ◽  
Large Diameter ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Carbon Nanotube Network ◽  
Effect Transistor

scholarly journals Single-Walled Carbon Nanotube Network Field Effect Transistor as a Humidity Sensor

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Prasantha R. Mudimela ◽  
Kestutis Grigoras ◽  
Ilya V. Anoshkin ◽  
Aapo Varpula ◽  
Vladimir Ermolov ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Operation Speed ◽  
Carbon Nanotube Network ◽  
Effect Transistor

Single-walled carbon nanotube network field effect transistors were fabricated and studied as humidity sensors. Sensing responses were altered by changing the gate voltage. At the open channel state (negative gate voltage), humidity pulse resulted in the decrease of the source-drain current, and,vice versa, the increase in the source-drain current was observed at the positive gate voltage. This effect was explained by the electron-donating nature of water molecules. The operation speed and signal intensity was found to be dependent on the gate voltage polarity. The positive or negative change in current with humidity pulse at zero-gate voltage was found to depend on the previous state of the gate electrode (positive or negative voltage, respectively). Those characteristics were explained by the charge traps in the gate dielectric altering the effective gate voltage, which influenced the operation of field effect transistor.

Hafnium oxide layer-enhanced single-walled carbon nanotube field-effect transistor-based sensing platform

2021 ◽  
Vol 1147 ◽  
pp. 99-107
Author(s):  
QingYi Meng ◽  
Shuhua Wei ◽  
Zhiyuan Xu ◽  
Qiang Cao ◽  
Yushi Xiao ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Oxide Layer ◽  
Hafnium Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Sensing Platform ◽  
Effect Transistor

scholarly journals Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure

Electronics ◽  
2019 ◽  
Vol 8 (2) ◽  
pp. 241 ◽  
Author(s):  
Huolin Huang ◽  
Feiyu Li ◽  
Zhonghao Sun ◽  
Nan Sun ◽  
Feng Zhang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Blocking Layer ◽  
Vertical Field ◽  
Current Blocking Layer ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor ◽  
Current Blocking

A gallium nitride (GaN) semiconductor vertical field-effect transistor (VFET) has several attractive advantages such as high power density capability and small device size. Currently, some of the main issues hindering its development include the realization of normally off operation and the improvement of high breakdown voltage (BV) characteristics. In this work, a trenched-gate scheme is employed to realize the normally off VFET. Meanwhile, an additional back current blocking layer (BCBL) is proposed and inserted into the GaN normally off VFET to improve the device performance. The electrical characteristics of the proposed device (called BCBL-VFET) are investigated systematically and the structural parameters are optimized through theoretical calculations and TCAD simulations. We demonstrate that the BCBL-VFET exhibits a normally off operation with a large positive threshold voltage of 3.5 V and an obviously increased BV of 1800 V owing to the uniform electric field distribution achieved around the gate region. However, the device only shows a small degradation of on-resistance (RON). The proposed scheme provides a useful reference for engineers in device fabrication work and will be promising for the applications of power electronics.

Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction

2019 ◽  
Vol 53 (10) ◽  
pp. 1279-1281
Author(s):  
N. V. Vostokov ◽  
V. M. Daniltsev ◽  
S. A. Kraev ◽  
V. L. Krukov ◽  
E. V. Skorokhodov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Field ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor

Photocurrent of CdSe nanocrystals on single-walled carbon nanotube-field effect transistor

2008 ◽  
Vol 92 (24) ◽  
pp. 243103 ◽  
Author(s):  
Seung Yol Jeong ◽  
Seong Chu Lim ◽  
Dong Jae Bae ◽  
Young Hee Lee ◽  
Hyun Jin Shin ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Cdse Nanocrystals ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Effect Transistor

Reconfigurable vertical field-effect transistor based on graphene/MoTe2/graphite heterostructure

2020 ◽  
Vol 63 (10) ◽  
Author(s):  
Cong Wang ◽  
Chen Pan ◽  
Shi-Jun Liang ◽  
Bin Cheng ◽  
Feng Miao
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Field ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor

Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

2009 ◽  
Vol 95 (21) ◽  
pp. 213301 ◽  
Author(s):  
Ariel J. Ben-Sasson ◽  
Eran Avnon ◽  
Elina Ploshnik ◽  
Oded Globerman ◽  
Roy Shenhar ◽  
...  
Keyword(s):  
Block Copolymer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vertical Field ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor

Pentacene-Based Photodetector in Visible Region With Vertical Field-Effect Transistor Configuration

2015 ◽  
Vol 27 (3) ◽  
pp. 233-236 ◽  
Author(s):  
Dan Yang ◽  
Li Zhang ◽  
Haowei Wang ◽  
Yishan Wang ◽  
Zhixiao Li ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Visible Region ◽  
Vertical Field ◽  
Effect Transistor ◽  
Vertical Field Effect ◽  
Vertical Field Effect Transistor
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